NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV HDTV HIGH SPEED SWITCHING APPLICATIONS

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed switching applications

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed switching applications

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed switching applications

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Silicon NPN triple diffusion mesa type For horizontal deflection output ■Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Silicon NPN triple diffusion mesa type For horizontal deflection output ■Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)

Silicon NPN triple diffusion mesa type

Silicon NPN triple diffusion mesa type\nFor horizontal deflection output■ ● High breakdown voltage, and high reliability through the use of a glass passivation layer\n● High-speed switching\n● Wide area of safe operation (ASO);

Silicon NPN triple diffusion mesa type Power Transistor

For horizontal deflection output■ ● High breakdown voltage, and high reliability through the use of a glass passivation layer\n● High-speed switching\n● Wide area of safe operation (ASO);

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

For horizontal deflection output ■Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage-: VCBO= 1700V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output applications.

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

FEATURE • High fT 17 GHz TYP. • High gain |S21e|2 = 15.5 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 7 mA • NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA • 6-pin Small Mini Mold Package

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

FEATURE • High fT 17 GHz TYP. • High gain |S21e|2 = 15.5 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 7 mA • NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA • 6-pin Small Mini Mold Package

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

FEATURE • High fT 16 GHz TYP. • High gain |S21e|2 = 14 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA • NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA • 6-pin Small Mini Mold Package

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

FEATURE • High fT 16 GHz TYP. • High gain |S21e|2 = 14 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA • NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA • 6-pin Small Mini Mold Package

Silicon NPN Power Transistors

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Silicon NPN Power Transistors

文件：154.45 Kbytes Page：3 Pages

Silicon NPN Power Transistors

文件：154.45 Kbytes Page：3 Pages

Silicon NPN Power Transistors

文件：154.45 Kbytes Page：3 Pages

Silicon NPN triple diffusion planar type

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NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION