NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

DESCRIPTION The 2SC5338 is designed for a low distortion and low noise RF amplifier with an operation on the low supply voltage (VCE= 5 V). This low distortion characteristics is suitable for the CATV, tele-communication, and such. FEATURES • High gain |S21 |2 = 10 dB TYP., @VCE= 5 V, I

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: S21e2 = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz • Low distortion, low voltage: IM2 = −55 dB TYP., IM3 = −76 dB TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dBµV/75Ω • 4-pin power

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: S21e2 = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz • Low distortion, low voltage: IM2 = −55 dB TYP., IM3 = −76 dB TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dBµV/75Ω • 4-pin power

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD

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RF & Microwave device

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封装/外壳：TO-243AA 包装：托盘 描述：RF TRANS NPN 12V 6GHZ SOT89 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：TO-243AA 包装：托盘 描述：RF TRANS NPN 12V 6GHZ SOT89 分立半导体产品 晶体管 - 双极（BJT）- 射频