封装/外壳：TO-243AA 包装：托盘 描述：RF TRANS NPN 12V 6GHZ SOT89 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: S21e2 = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz • Low distortion, low voltage: IM2 = −55 dB TYP., IM3 = −76 dB TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dBµV/75Ω • 4-pin power