FOR SMALL TYPE COLOUR TV CHROMA OUTPUT APPLICATION SILICON NPN TRIPLE DIFFUSED TYPE

FOR SMALL TYPE COLOUR TV CHROMA OUTPUT APPLICATION SILICON NPN TRIPLE DIFFUSED TYPE

Small Signal Transistor

■ Features ● High voltage VCEO=50V. ● Small package for mounting. ● Complementary to 2SA1945

FOR HIGH CURRENT DRIVE APPLICATION SILICON NP EPITAXIAL TYPE

DESCRIPTION 2SC5212 is a resin sealed silicon NPN epitaxial transistor. It designed with high collector current, small VCE(sat). Complementary with 2SA1946. FEATURE ● Low collector to emitter saturation voltage VCE(sat)=0.2V typ ● High fT=180MHz typ ● Excellent linearity of DC forward curre

Small Signal Transistor

■ Features ● Low Collector saturation voltage ● High fT fT=180MHz typ ● Excellent liinearity of DC forward current gain ● High collector current ICP=1A ● Complementary to 2SA1946

Small Signal Transistor

■ Features ● High fT fT=100MHz typ ● Excellent liinearity of DC forward current gain ● High collector current ICP=1.5A ● Complementary to 2SA1947

SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC5214 is a resin sealed silicon NPN epitaxial type transistor. It designed with high collector current and 2 to 3.5W low frequency power amplify. Complementary with 2SA1947. APPLICATION Radio, tape recorder, small type stereo, etc. Low frequency power amplify circuit with 2 t

For Low Frequency Amplify Application Silicon Npn Epitaxial Type

[Isahaya] DESCRIPTION 2SC5214 is a resin sealed silicon NPN epitaxial type transistor. It designed with high collector current and 2 to 3.5W low frequency power amplify. Complementary with 2SA1947. APPLICATION Radio, tape recorder, small type stereo, etc. Low frequency power amplify circu

Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)

Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing ■ Features ● High transition frequency fT. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Application VHF / UHF wide band amplifier

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Application VHF / UHF wide band amplifier

High Gain Bandwidth Product

DESCRIPTION • High Gain Bandwidth Product fT = 9 GHz TYP. • High Gain, Low Noise Figure PG = 13.0 dB TYP., NF = 1.2 dB TYP @ f = 900 MHz APPLICATIONS • Designed for use in VHF ~ UHF amplifiers.

Silicon NPN Triple Diffused Planar

Features • High breakdown voltage VCES = 1700 V • High speed switching tf = 0.15 µsec (typ) • Built-in damper diode type • Isolated package TO-3P•FM Application Character display horizontal deflection output

NPN Transistors

文件：555.03 Kbytes Page：2 Pages

晶体管（PNP、NPN）

NPN Transistors

文件：919.14 Kbytes Page：2 Pages

2SC5213

文件：76.22 Kbytes Page：4 Pages

2SC5213

晶体管（PNP、NPN）

NPN Transistors

文件：1.20424 Mbytes Page：2 Pages