FOR SMALL TYPE COLOUR TV CHROMA OUTPUT APPLICATION SILICON NPN TRIPLE DIFFUSED TYPE

FOR SMALL TYPE COLOUR TV CHROMA OUTPUT APPLICATION SILICON NPN TRIPLE DIFFUSED TYPE

Small Signal Transistor

■ Features ● High voltage VCEO=50V. ● Small package for mounting. ● Complementary to 2SA1945

Small Signal Transistor

■ Features ● Low Collector saturation voltage ● High fT fT=180MHz typ ● Excellent liinearity of DC forward current gain ● High collector current ICP=1A ● Complementary to 2SA1946

FOR HIGH CURRENT DRIVE APPLICATION SILICON NP EPITAXIAL TYPE

DESCRIPTION 2SC5212 is a resin sealed silicon NPN epitaxial transistor. It designed with high collector current, small VCE(sat). Complementary with 2SA1946. FEATURE ● Low collector to emitter saturation voltage VCE(sat)=0.2V typ ● High fT=180MHz typ ● Excellent linearity of DC forward curre

SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC5214 is a resin sealed silicon NPN epitaxial type transistor. It designed with high collector current and 2 to 3.5W low frequency power amplify. Complementary with 2SA1947. APPLICATION Radio, tape recorder, small type stereo, etc. Low frequency power amplify circuit with 2 t

For Low Frequency Amplify Application Silicon Npn Epitaxial Type

[Isahaya] DESCRIPTION 2SC5214 is a resin sealed silicon NPN epitaxial type transistor. It designed with high collector current and 2 to 3.5W low frequency power amplify. Complementary with 2SA1947. APPLICATION Radio, tape recorder, small type stereo, etc. Low frequency power amplify circu

Small Signal Transistor

■ Features ● High fT fT=100MHz typ ● Excellent liinearity of DC forward current gain ● High collector current ICP=1.5A ● Complementary to 2SA1947

Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)

Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing ■ Features ● High transition frequency fT. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Application VHF / UHF wide band amplifier

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Application VHF / UHF wide band amplifier

High Gain Bandwidth Product

DESCRIPTION • High Gain Bandwidth Product fT = 9 GHz TYP. • High Gain, Low Noise Figure PG = 13.0 dB TYP., NF = 1.2 dB TYP @ f = 900 MHz APPLICATIONS • Designed for use in VHF ~ UHF amplifiers.

Silicon NPN Triple Diffused Planar

Features • High breakdown voltage VCES = 1700 V • High speed switching tf = 0.15 µsec (typ) • Built-in damper diode type • Isolated package TO-3P•FM Application Character display horizontal deflection output

NPN Transistors

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晶体管（PNP、NPN）

NPN Transistors

文件：919.14 Kbytes Page：2 Pages

2SC5213

2SC5213

文件：76.22 Kbytes Page：4 Pages

晶体管（PNP、NPN）

NPN Transistors

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