POWER AMPLIFIER APPLICATION

• Complementary to 2SA1943 • Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.

High power NPN epitaxial planar bipolar transistor

Description This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz Application ■ Audio power amplif

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

NPN Epitaxial Silicon Transistor

Features • High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1943/FJL4215. • Thermal and electrical Spice models are av

150 Watt Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1943 APPLICATIONS ·High current switching ·Recommended for 100W high fidelity audio frequency amplifier output stage

POWER AMPLIFIER APPLICATIONS

POWER AMPLIFIER APPLICATIONS FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943

NPN Epitaxial Silicon Transistor

1. High Current Capability: IC= 17A. 2. High Power Dissipation : 150watts. 3. High Frequency : 30MHz. 4. High Voltage : VCEO=250V 5. Wide S.O.A for reliable operation. 6. Excellent Gain Linearity for low THD. 7. Complement to 2SA1943/FJL4215.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SA1943 APPLICATIONS • High current switching • Recommended for 100W high fidelity audio frequency amplifier output stage

isc Silicon NPN Power Transistor

DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to Type 2SA1943 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=300V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 3.0V(Max) @IC= 8A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

High power NPN epitaxial planar bipolar transistor

Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz Application ■ Audio power amplifier Description This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity b

150 Watt Silicon Epitaxial Planar NPN Power Transistor

DESCRIPTION ·With TO-3PN-SQ package ·Complement to type 2SA1943N APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage

power amplifier applications

POWER AMPLIFIER APPLICATIONS • Complementary to 2SA1943 ​​​​​​​• Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.

NPN Epitaxial Silicon Transistor

Features • High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1943/FJL4215. • Thermal and electrical Spice models are av

NPN Epitaxial Silicon Transistor

1. High Current Capability: IC= 17A. 2. High Power Dissipation : 150watts. 3. High Frequency : 30MHz. 4. High Voltage : VCEO=250V 5. Wide S.O.A for reliable operation. 6. Excellent Gain Linearity for low THD. 7. Complement to 2SA1943/FJL4215.

NPN Epitaxial Silicon Transistor

Features • High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1943/FJL4215. • Thermal and electrical Spice models are av

NPN Epitaxial Silicon Transistor

1. High Current Capability: IC= 17A. 2. High Power Dissipation : 150watts. 3. High Frequency : 30MHz. 4. High Voltage : VCEO=250V 5. Wide S.O.A for reliable operation. 6. Excellent Gain Linearity for low THD. 7. Complement to 2SA1943/FJL4215.

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

NPN TRIPLE DIFFUSED MESA TYPE (HIGH VOLTAGE SWITCHING APPLICATIONS)

High-Voltage Switching Applications • High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 20 mA, IB = 0.5 mA)

SILICON NPN TRIPLE DIFFUSED PLANAR

Silicon NPN Triple Diffused Planar Features • High speed switching tf = 0.2 µsec(typ) • Wide drive current capability

Silicon NPN Triple Diffused Type High-Voltage Switching Applications

High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications • High-speed switching: tr = 1.0 μs (max) ,tf = 1.5 μs (max) • High breakdown voltage: VCEO = 400 V

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC5209 is a silicon NPN epitaxial type transistor. It designed with high voltage, high collector current and high hFE. Complementary with 2SA1944. FEATURES ● High voltage VCEO = 50V ● Small collector to emitter saturation voltage VCE(sat) = 0.15V typ (@IC = 500mA, IB = 10mA

Small Signal Transistor

■ Features ● High hFE : hFE=600 to 1800 ● High breakdown voltage ● Small package for mounting ● Complementary to 2SA1944

FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE

[Isahaya Electronics Corporation] DESCRIPTION 2SC5209 is a silicon NPN epitaxial type transistor. It designed with high voltage, high collector current and high hFE. Complementary with 2SA1944. FEATURES ● High voltage VCEO = 50V ● Small collector to emitter saturation voltage VCE(sat)

FOR SMALL TYPE COLOUR TV CHROMA OUTPUT APPLICATION SILICON NPN TRIPLE DIFFUSED TYPE

FOR SMALL TYPE COLOUR TV CHROMA OUTPUT APPLICATION SILICON NPN TRIPLE DIFFUSED TYPE

Small Signal Transistor

■ Features ● High voltage VCEO=50V. ● Small package for mounting. ● Complementary to 2SA1945

Small Signal Transistor

■ Features ● Low Collector saturation voltage ● High fT fT=180MHz typ ● Excellent liinearity of DC forward current gain ● High collector current ICP=1A ● Complementary to 2SA1946

FOR HIGH CURRENT DRIVE APPLICATION SILICON NP EPITAXIAL TYPE

DESCRIPTION 2SC5212 is a resin sealed silicon NPN epitaxial transistor. It designed with high collector current, small VCE(sat). Complementary with 2SA1946. FEATURE ● Low collector to emitter saturation voltage VCE(sat)=0.2V typ ● High fT=180MHz typ ● Excellent linearity of DC forward curre

For Low Frequency Amplify Application Silicon Npn Epitaxial Type

[Isahaya] DESCRIPTION 2SC5214 is a resin sealed silicon NPN epitaxial type transistor. It designed with high collector current and 2 to 3.5W low frequency power amplify. Complementary with 2SA1947. APPLICATION Radio, tape recorder, small type stereo, etc. Low frequency power amplify circu

Small Signal Transistor

■ Features ● High fT fT=100MHz typ ● Excellent liinearity of DC forward current gain ● High collector current ICP=1.5A ● Complementary to 2SA1947

SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC5214 is a resin sealed silicon NPN epitaxial type transistor. It designed with high collector current and 2 to 3.5W low frequency power amplify. Complementary with 2SA1947. APPLICATION Radio, tape recorder, small type stereo, etc. Low frequency power amplify circuit with 2 t

Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)

Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing ■ Features ● High transition frequency fT. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

High Gain Bandwidth Product

DESCRIPTION • High Gain Bandwidth Product fT = 9 GHz TYP. • High Gain, Low Noise Figure PG = 13.0 dB TYP., NF = 1.2 dB TYP @ f = 900 MHz APPLICATIONS • Designed for use in VHF ~ UHF amplifiers.

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Application VHF / UHF wide band amplifier

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Application VHF / UHF wide band amplifier

Silicon NPN Triple Diffused Planar

Features • High breakdown voltage VCES = 1700 V • High speed switching tf = 0.15 µsec (typ) • Built-in damper diode type • Isolated package TO-3P•FM Application Character display horizontal deflection output

HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATIONS.

FEATURES: • High Breakdown Voltage : VCEO100V (2SC522) : Vceo= 60V (2SC524) • Useful attachment for Heat sink. • Various Uses for Medium Power : Ic=1.5A (Max.), Pc=10W (Max.)

Silicon NPN triple diffusion planar type(For high-speed switching)

Silicon NPN triple diffusion planar type For high-speed switching ■ Features ● High collector to base voltage VCBO ● High collector to emitter VCEO

Silicon NPN Epitaxial Transistor

Features • High voltage large current operation. VCEO = 80 V, IC = 300 mA • High fT. fT = 1.4 GHz • Small output capacitance. Cob = 3 pF Application • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switchin

VHF to UHF Wide-Band Low-Noise Amp Applications???

VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : |S21e|2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ.

RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP

RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

VHF to UHF Wide-Band Low-Noise Amplifier Applications

NPN Epitaxial Planar Silicon Transistor Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

VHF to UHF Wide-Band Low-Noise Amplifi er Applications

NPN Epitaxial Planar Silicon Transistor Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP

RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

VHF to UHF Wide-Band Low-Noise Amplifi er Applications

NPN Epitaxial Planar Silicon Transistor Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP

RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

VHF to UHF Wide-Band Low-Noise Amplifi er Applications

NPN Epitaxial Planar Silicon Transistor Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

VHF to UHF Wide-Band Low-Noise Amplifi er Applications

NPN Epitaxial Planar Silicon Transistor Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

High Gain Bandwidth Product

DESCRIPTION • High Gain Bandwidth Product fT = 7 GHz TYP. • High Gain, Low Noise Figure |S21e|2 = 12 dB TYP., NF = 1.0 dB TYP @ f = 1 GHz APPLICATIONS • Designed for VHF~UHF wideband low noise amplifier applications.

VHF to UHF Wide-Band Low-Noise Amp Applications???

VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • Low noise : NF=1.0dB typ (f=1GHz). • High gain : | S21e |2 = 12dB typ (f=1GHz). • High cutoff frequency : fT=7GHz typ.

RF Transistor 10V, 70mA, fT=7GHz, NPN Single CP

RF Transistor 10V, 70mA, fT=7GHz, NPN Single CP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : |S21e|2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

RF Transistor 10V, 70mA,fT=7GHz, NPN Single CP

RF Transistor 10V, 70mA, fT=7GHz, NPN Single CP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : |S21e|2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

VHF to UHF Wide-Band Low-Noise Amplifier Applications

VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

RF Transistor 10V, 70mA,fT=7GHz, NPN Single CP

RF Transistor 10V, 70mA, fT=7GHz, NPN Single CP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : |S21e|2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

RF Transistor 10V, 70mA, fT=7GHz, NPN Single CP

RF Transistor 10V, 70mA, fT=7GHz, NPN Single CP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : |S21e|2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

RF Transistor 10V, 70mA, fT=7GHz, NPN Single CP

RF Transistor 10V, 70mA, fT=7GHz, NPN Single CP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : |S21e|2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

RF Transistor 10V, 70mA,fT=7GHz, NPN Single CP

RF Transistor 10V, 70mA, fT=7GHz, NPN Single CP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : |S21e|2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

VHF to UHF Wide-Band Low-Noise Amp Applications???

VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • Low noise : NF=1.0dB typ (f=1GHz). • High gain : |S21e|2=13.5dB typ (f=1GHz). • High cutoff frequency : fT=7GHz typ.

VHF to UHF Wide-Band Low-Noise Amp Applications???

VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • Low noise : NF=1.0dB typ (f=1GHz). • High gain : |S21e|2=10.5dB typ (f=1GHz). • High cutoff frequency : fT=6.5GHz typ. • Medium power operation : NF=1.7dB typ (f=1GHz). (VCE=8V, IC=40mA) : |S21e|2=11dB typ (f=1GHz).