2SC5200晶体管资料

  • 2SC5200别名:2SC5200三极管、2SC5200晶体管、2SC5200晶体三极管

  • 2SC5200生产厂家

  • 2SC5200制作材料:Si-NPN

  • 2SC5200性质:低频或音频放大 (LF)_HIFI_输出极 (E)

  • 2SC5200封装形式:直插封装

  • 2SC5200极限工作电压:230V

  • 2SC5200最大电流允许值:15A

  • 2SC5200最大工作频率:30MHZ

  • 2SC5200引脚数:3

  • 2SC5200最大耗散功率:150W

  • 2SC5200放大倍数

  • 2SC5200图片代号:B-62

  • 2SC5200vtest:230

  • 2SC5200htest:30000000

  • 2SC5200atest:15

  • 2SC5200wtest:150

  • 2SC5200代换 2SC5200用什么型号代替:2SC4029,

2SC5200价格

参考价格:¥7.0021

型号:2SC5200N(S1,E,S) 品牌:Toshiba 备注:这里有2SC5200多少钱,2025年最近7天走势,今日出价,今日竞价,2SC5200批发/采购报价,2SC5200行情走势销售排行榜,2SC5200报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SC5200

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighCurrentCapability ·HighPowerDissipation ·HighCollector-EmitterBreakdownVoltage- :V(BR)CEO=230V(Min) ·ComplementtoType2SA1943 APPLICATIONS ·Poweramplifierapplications ·Recommendfor100Whighfidelityaudiofrequencyamplifieroutputstage

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC5200

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PLpackage •Complementtotype2SA1943 APPLICATIONS •Highcurrentswitching •Recommendedfor100Whighfidelityaudio frequencyamplifieroutputstage

SAVANTIC

Savantic, Inc.

SAVANTIC
2SC5200

POWERAMPLIFIERAPPLICATIONS

POWERAMPLIFIERAPPLICATIONS FEATURES *Recommendedfor100WHighFidelityAudioFrequency AmplifierOutputStage. *ComplementarytoUTC2SA1943

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SC5200

NPNEpitaxialSiliconTransistor

1.HighCurrentCapability:IC=17A. 2.HighPowerDissipation:150watts. 3.HighFrequency:30MHz. 4.HighVoltage:VCEO=250V 5.WideS.O.Aforreliableoperation. 6.ExcellentGainLinearityforlowTHD. 7.Complementto2SA1943/FJL4215.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2SC5200

POWERAMPLIFIERAPPLICATION

•Complementaryto2SA1943 •Recommendedfor100WHighFidelityAudioFrequencyAmplifierOutputStage.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SC5200

150WattSiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PLpackage ·Complementtotype2SA1943 APPLICATIONS ·Highcurrentswitching ·Recommendedfor100Whighfidelityaudiofrequencyamplifieroutputstage

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

THINKISEMI
2SC5200

HighpowerNPNepitaxialplanarbipolartransistor

Description ThisdeviceisaNPNtransistormanufacturedusingnewBiT-LA(bipolartransistorforlinearamplifier)technology.Theresultingtransistorshowsgoodgainlinearitybehaviour. Features ■HighbreakdownvoltageVCEO=230V ■TypicalfT=30MHz Application ■Audiopoweramplif

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
2SC5200

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC5200

NPNEpitaxialSiliconTransistor

Features •HighCurrentCapability:IC=17A. •HighPowerDissipation:150watts. •HighFrequency:30MHz. •HighVoltage:VCEO=250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SA1943/FJL4215. •ThermalandelectricalSpicemodelsareav

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SC5200

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=300V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=3.0V(Max)@IC=8A APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC5200

HighpowerNPNepitaxialplanarbipolartransistor

Features ■HighbreakdownvoltageVCEO=230V ■TypicalfT=30MHz Application ■Audiopoweramplifier Description ThisdeviceisaNPNtransistormanufactured usingnewBiT-LA(bipolartransistorforlinear amplifier)technology.Theresultingtransistor showsgoodgainlinearityb

SYC

SYC Electronica

SYC
2SC5200

封装/外壳:TO-264-3,TO-264AA 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN 230V 15A TO264 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
2SC5200

POWERAMPLIFIERAPPLICATIONSDRIVERSTAGEAMPLIFIER

文件:177.43 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SC5200

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC
2SC5200

SiliconNPNtransistorinaTO-3PPlasticPackage.

文件:921.21 Kbytes Page:6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SC5200

150WattSiliconEpitaxialPlanarNPNPowerTransistor

文件:281.75 Kbytes Page:2 Pages

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

THINKISEMI
2SC5200

TO-3PPlastic-EncapsulateTransistors

文件:377.77 Kbytes Page:2 Pages

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
2SC5200

SiliconNPNPowerTransistors

文件:231.01 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
2SC5200

PowerAmplifierApplications

文件:127.51 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

150WattSiliconEpitaxialPlanarNPNPowerTransistor

DESCRIPTION ·WithTO-3PN-SQpackage ·Complementtotype2SA1943N APPLICATIONS ·Poweramplifierapplications ·Recommendedfor100Whighfidelityaudio frequencyamplifieroutputstage

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

THINKISEMI

poweramplifierapplications

POWERAMPLIFIERAPPLICATIONS •Complementaryto2SA1943 ​​​​​​​•Recommendedfor100WHighFidelityAudioFrequencyAmplifierOutputStage.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEpitaxialSiliconTransistor

Features •HighCurrentCapability:IC=17A. •HighPowerDissipation:150watts. •HighFrequency:30MHz. •HighVoltage:VCEO=250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SA1943/FJL4215. •ThermalandelectricalSpicemodelsareav

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNEpitaxialSiliconTransistor

1.HighCurrentCapability:IC=17A. 2.HighPowerDissipation:150watts. 3.HighFrequency:30MHz. 4.HighVoltage:VCEO=250V 5.WideS.O.Aforreliableoperation. 6.ExcellentGainLinearityforlowTHD. 7.Complementto2SA1943/FJL4215.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

NPNEpitaxialSiliconTransistor

1.HighCurrentCapability:IC=17A. 2.HighPowerDissipation:150watts. 3.HighFrequency:30MHz. 4.HighVoltage:VCEO=250V 5.WideS.O.Aforreliableoperation. 6.ExcellentGainLinearityforlowTHD. 7.Complementto2SA1943/FJL4215.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

NPNEpitaxialSiliconTransistor

Features •HighCurrentCapability:IC=17A. •HighPowerDissipation:150watts. •HighFrequency:30MHz. •HighVoltage:VCEO=250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SA1943/FJL4215. •ThermalandelectricalSpicemodelsareav

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

PowerAmplifierApplications

文件:127.51 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

POWERAMPLIFIERAPPLICATIONSDRIVERSTAGEAMPLIFIER

文件:177.43 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

150WattSiliconEpitaxialPlanarNPNPowerTransistor

文件:281.75 Kbytes Page:2 Pages

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

THINKISEMI

PowerAmplifierApplications

文件:330.15 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

PowerAmplifierApplications

文件:330.15 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

PowerAmplifierApplications

文件:330.15 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

PowerAmplifierApplications

文件:330.15 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

PowerAmplifierApplications

文件:283.18 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

PowerAmplifierApplications

文件:283.18 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

PowerAmplifierApplications

文件:283.18 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

PowerAmplifierApplications

文件:283.18 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

iscSiliconNPNPowerTransistor

文件:273.15 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

封装/外壳:TO-3PL 包装:散装 描述:TRANS NPN 230V 15A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

SiliconNPNTripleDiffusedTransistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC

POWERAMPLIFIERAPPLICATIONSDRIVERSTAGEAMPLIFIER

文件:177.43 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2SC5200产品属性

  • 类型

    描述

  • 型号

    2SC5200

  • 制造商

    TOSHIBA

  • 制造商全称

    Toshiba Semiconductor

  • 功能描述

    Power Amplifier Applications

更新时间:2025-7-6 17:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
2024
TO-3PL
13500
16余年资质 绝对原盒原盘代理渠道 更多数量
TOSHIBA(东芝)
24+
N/A
12048
原厂可订货,技术支持,直接渠道。可签保供合同
TOSHIBA
23+
TO-3P
6000
全新原装现货、诚信经营!
CJ/长电
22+
TO-3P
703
原装正品现货,可开13点税
TOSHIBA/东芝
24+
10000
公司只做原装正品!现货库存!假一罚十!
TOSHIBA品牌
2016+
TO-3P
6528
房间原装进口现货假一赔十
24+
TO-3PL
10000
全新
TOSH
2014+
870
公司现货库存
TOSHIBA
24+
TO-3PL
2000
原装正品,欢迎咨询
TOSHIBA
23+
TO-3P
11889
正规渠道,只有原装!

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  • P-TEC
  • WECO
  • Yamaha

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