2SC5200晶体管资料

  • 2SC5200别名:2SC5200三极管、2SC5200晶体管、2SC5200晶体三极管

  • 2SC5200生产厂家

  • 2SC5200制作材料:Si-NPN

  • 2SC5200性质:低频或音频放大 (LF)_HIFI_输出极 (E)

  • 2SC5200封装形式:直插封装

  • 2SC5200极限工作电压:230V

  • 2SC5200最大电流允许值:15A

  • 2SC5200最大工作频率:30MHZ

  • 2SC5200引脚数:3

  • 2SC5200最大耗散功率:150W

  • 2SC5200放大倍数

  • 2SC5200图片代号:B-62

  • 2SC5200vtest:230

  • 2SC5200htest:30000000

  • 2SC5200atest:15

  • 2SC5200wtest:150

  • 2SC5200代换 2SC5200用什么型号代替:2SC4029,

2SC5200价格

参考价格:¥7.0021

型号:2SC5200N(S1,E,S) 品牌:Toshiba 备注:这里有2SC5200多少钱,2026年最近7天走势,今日出价,今日竞价,2SC5200批发/采购报价,2SC5200行情走势销售排行榜,2SC5200报价。
型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:2SC5200;Silicon NPN Triple Diffused Transistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:2SC5200;Silicon NPN Triple Diffused Transistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:2SC5200;Silicon NPN Triple Diffused Transistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:2SC5200;Silicon NPN Triple Diffused Transistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:2SC5200;Silicon NPN Triple Diffused Transistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:2SC5200;Silicon NPN Triple Diffused Transistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:2SC5200;Silicon NPN Triple Diffused Transistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:2SC5200;Silicon NPN Triple Diffused Transistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:2SC5200;Silicon NPN Triple Diffused Transistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:2SC5200;Silicon NPN Triple Diffused Transistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:2SC5200;Silicon NPN Triple Diffused Transistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:2SC5200;Silicon NPN Triple Diffused Transistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

2SC5200

isc Silicon NPN Power Transistor

DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to Type 2SA1943 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage

ISC

无锡固电

2SC5200

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SA1943 APPLICATIONS • High current switching • Recommended for 100W high fidelity audio frequency amplifier output stage

SAVANTIC

2SC5200

POWER AMPLIFIER APPLICATIONS

POWER AMPLIFIER APPLICATIONS FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943

UTC

友顺

2SC5200

NPN Epitaxial Silicon Transistor

1. High Current Capability: IC= 17A. 2. High Power Dissipation : 150watts. 3. High Frequency : 30MHz. 4. High Voltage : VCEO=250V 5. Wide S.O.A for reliable operation. 6. Excellent Gain Linearity for low THD. 7. Complement to 2SA1943/FJL4215.

FAIRCHILD

仙童半导体

2SC5200

POWER AMPLIFIER APPLICATION

• Complementary to 2SA1943 • Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SC5200

150 Watt Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1943 APPLICATIONS ·High current switching ·Recommended for 100W high fidelity audio frequency amplifier output stage

THINKISEMI

思祁半导体

2SC5200

High power NPN epitaxial planar bipolar transistor

Description This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz Application ■ Audio power amplif

STMICROELECTRONICS

意法半导体

2SC5200

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SC5200

NPN Epitaxial Silicon Transistor

Features • High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1943/FJL4215. • Thermal and electrical Spice models are av

ONSEMI

安森美半导体

2SC5200

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=300V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 3.0V(Max) @IC= 8A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

ISC

无锡固电

2SC5200

High power NPN epitaxial planar bipolar transistor

Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz Application ■ Audio power amplifier Description This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity b

SYC

2SC5200

封装/外壳:TO-264-3,TO-264AA 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN 230V 15A TO264 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

2SC5200

POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER

文件:177.43 Kbytes Page:4 Pages

UTC

友顺

2SC5200

Bipolar Transistor

UTC

友顺

2SC5200

晶体管

JSCJ

长晶科技

2SC5200

Power transistor for high-speed switching applications

TOSHIBA

东芝

2SC5200

Silicon NPN Triple Diffused Transistor

文件:571.19 Kbytes Page:8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

2SC5200

Silicon NPN transistor in a TO-3P Plastic Package.

文件:921.21 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

2SC5200

150 Watt Silicon Epitaxial Planar NPN Power Transistor

文件:281.75 Kbytes Page:2 Pages

THINKISEMI

思祁半导体

2SC5200

TO-3P Plastic-Encapsulate Transistors

文件:377.77 Kbytes Page:2 Pages

JIANGSU

长电科技

2SC5200

Silicon NPN Power Transistors

文件:231.01 Kbytes Page:4 Pages

SAVANTIC

2SC5200

Power Amplifier Applications

文件:127.51 Kbytes Page:4 Pages

TOSHIBA

东芝

150 Watt Silicon Epitaxial Planar NPN Power Transistor

DESCRIPTION ·With TO-3PN-SQ package ·Complement to type 2SA1943N APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage

THINKISEMI

思祁半导体

power amplifier applications

POWER AMPLIFIER APPLICATIONS • Complementary to 2SA1943 ​​​​​​​• Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.

TOSHIBA

东芝

丝印代码:C5200O;NPN Epitaxial Silicon Transistor

Features • High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1943/FJL4215. • Thermal and electrical Spice models are av

ONSEMI

安森美半导体

NPN Epitaxial Silicon Transistor

1. High Current Capability: IC= 17A. 2. High Power Dissipation : 150watts. 3. High Frequency : 30MHz. 4. High Voltage : VCEO=250V 5. Wide S.O.A for reliable operation. 6. Excellent Gain Linearity for low THD. 7. Complement to 2SA1943/FJL4215.

FAIRCHILD

仙童半导体

NPN Epitaxial Silicon Transistor

1. High Current Capability: IC= 17A. 2. High Power Dissipation : 150watts. 3. High Frequency : 30MHz. 4. High Voltage : VCEO=250V 5. Wide S.O.A for reliable operation. 6. Excellent Gain Linearity for low THD. 7. Complement to 2SA1943/FJL4215.

FAIRCHILD

仙童半导体

丝印代码:C5200R;NPN Epitaxial Silicon Transistor

Features • High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1943/FJL4215. • Thermal and electrical Spice models are av

ONSEMI

安森美半导体

Power Amplifier Applications

文件:127.51 Kbytes Page:4 Pages

TOSHIBA

东芝

POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER

文件:177.43 Kbytes Page:4 Pages

UTC

友顺

150 Watt Silicon Epitaxial Planar NPN Power Transistor

文件:281.75 Kbytes Page:2 Pages

THINKISEMI

思祁半导体

Power Amplifier Applications

文件:330.15 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Power Amplifier Applications

文件:330.15 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Power Amplifier Applications

文件:330.15 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Power Amplifier Applications

文件:330.15 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Power Amplifier Applications

文件:283.18 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Power Amplifier Applications

文件:283.18 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Power Amplifier Applications

文件:283.18 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Power Amplifier Applications

文件:283.18 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

isc Silicon NPN Power Transistor

文件:273.15 Kbytes Page:2 Pages

ISC

无锡固电

封装/外壳:TO-3PL 包装:散装 描述:TRANS NPN 230V 15A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER

文件:177.43 Kbytes Page:4 Pages

UTC

友顺

2SC5200产品属性

  • 类型

    描述

  • 型号

    2SC5200

  • 功能描述

    两极晶体管 - BJT 230V High Power NPN 30 MHz Audio Pwr App

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2026-3-15 16:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
23+
TO-3P
3000
正规渠道,只有原装!
TOSHIBA/东芝
2447
TO-3P
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
TOSHIBA(东芝)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
TOSHIBA
1922+
TO-3P
9200
公司原装现货假一罚十特价欢迎来电咨询
TOSHIBA/东芝
21+
TO-3P-3
2137
只做原装,一定有货,不止网上数量,量多可订货!
Toshiba
24+
NA
3000
进口原装正品优势供应
TOSHIBA
1609
50
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TOSHIBA/东芝
TO-3P(N)
22+
6000
十年配单,只做原装
TOSHIBA
24+
con
10000
查现货到京北通宇商城
TOSHIBA/东芝
ROHS .original
TO-3P-3
191
电子元器件供应原装现货. 优质独立分销。原厂核心渠道

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