Silicon NPN Epitaxial

Features • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ. Application High voltage amplifier

Silicon NPN Epitaxial

Features ● High breakdown voltage VCEO = 300 V ● Small Cob Cob = 1.5 pF Typ.

Silicon NPN Epitaxial

Features • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ. Application High voltage amplifier

Silicon NPN Epitaxial

Features • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ. Application High voltage amplifier

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD

DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, power mini mold (

isc Silicon NPN RF Transistor

DESCRIPTION • Low Distortion at Low Supply Voltage. IM2- 55 dB TYP., IM3- 76 dB TYP. @VCE = 5 V, IC = 50 mA, VO = 105dBμ /75Ω • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for low distortion ,

NPN EPITAXIAL SILICON RF TRANSISTOR FOR

DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE= 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, power minimold (SOT-89).

MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE= 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, Power Mini Mold (SOT-89).

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD

DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, power mini mold (

NPN EPITAXIAL SILICON RF TRANSISTOR FOR

DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE= 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, power minimold (SOT-89).

Low-Frequency General-Purpose Amp, Applications(High hFE)

Low-Frequency General-Purpose Amplifier, Applications (High hFE) Features • High DC current gain (hFE=800 to 3200). • Low collector-to-emitter saturation voltage : VCE(sat)≤0.5V max. • High VEBO : VEBO≥15V. • Small size making it easy to provide high-density, hybrid ICs. Applicati

NPN Epitaxial Planar Silicon Transistor

Features • High DC current gain (hFE=800 to 3200). • Low collector-to-emitter saturation voltage : VCE(sat) ≤ 0.5V max. • High VEBO : VEBO ≥ 15V. • Small size making it easy to provide high-density, hybrid ICs.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage switching transistor APPLICATIONS ·For switching regulator and general purpose applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage switching transistor APPLICATIONS ·For switching regulator and general purpose applications

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage switching transistor APPLICATIONS ·For switching regulator and general purpose applications

NPN EPITAXIAL TYPE (LOW FREQUENCY, DRIVER STAGE AMPLIFIER SWITCHING APPLICATIONS)

LOW FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. Excellent hFE Linearity : hFE(2) = 35(Min.), (VCE = 2V, IC = 300mA) Complementary to 2SA1811

High-Voltage Amplifier, High-Voltage Switching Applications

High-Voltage Amplifier, High-Voltage Switching Applications Features • High breakdown voltage (VCEO min=2100V). • Small Cob (Cob typ=1.3pF). • Wide ASO. • High reliability (Adoption of HVP process).

Silicon NPN Epitaxial

文件：106.03 Kbytes Page：7 Pages

Silicon NPN Epitaxial

文件：106.03 Kbytes Page：7 Pages

Silicon NPN Epitaxial

文件：150.9 Kbytes Page：7 Pages

Silicon NPN Epitaxial

文件：106.03 Kbytes Page：7 Pages

Silicon NPN Epitaxial

文件：106.03 Kbytes Page：7 Pages

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD

文件：181.66 Kbytes Page：9 Pages

RF & Microwave device

文件：137.58 Kbytes Page：2 Pages

封装/外壳：TO-243AA 包装：托盘 描述：RF TRANS NPN 12V 6GHZ SOT89 分立半导体产品 晶体管 - 双极（BJT）- 射频

Silicon NPN Power Transistor

文件：128.96 Kbytes Page：2 Pages

封装/外壳：TO-3P-3，SC-65-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 600V 14A TO3P 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Triple Diffused Planar Transistor

文件：32.08 Kbytes Page：1 Pages

Silicon NPN Power Transistors

文件：174.79 Kbytes Page：4 Pages

Silicon NPN Triple Diffused Planar Transistor

文件：31.61 Kbytes Page：1 Pages

Silicon NPN Power Transistors

文件：195.79 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：195.79 Kbytes Page：4 Pages