RF & Microwave device

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isc Silicon NPN RF Transistor

DESCRIPTION • Low Distortion at Low Supply Voltage. IM2- 55 dB TYP., IM3- 76 dB TYP. @VCE = 5 V, IC = 50 mA, VO = 105dBμ /75Ω • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for low distortion ,

MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE= 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, Power Mini Mold (SOT-89).

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD

DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, power mini mold (

NPN EPITAXIAL SILICON RF TRANSISTOR FOR

DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE= 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, power minimold (SOT-89).

封装/外壳：TO-243AA 包装：托盘 描述：RF TRANS NPN 12V 6GHZ SOT89 分立半导体产品 晶体管 - 双极（BJT）- 射频