Silicon NPN Epitaxial

Features • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ. Application High voltage amplifier

Silicon NPN Epitaxial

Features ● High breakdown voltage VCEO = 300 V ● Small Cob Cob = 1.5 pF Typ.

Silicon NPN Epitaxial

Features • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ. Application High voltage amplifier

Silicon NPN Epitaxial

Features • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ. Application High voltage amplifier

MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE= 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, Power Mini Mold (SOT-89).

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD

DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, power mini mold (

isc Silicon NPN RF Transistor

DESCRIPTION • Low Distortion at Low Supply Voltage. IM2- 55 dB TYP., IM3- 76 dB TYP. @VCE = 5 V, IC = 50 mA, VO = 105dBμ /75Ω • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for low distortion ,

NPN EPITAXIAL SILICON RF TRANSISTOR FOR

DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE= 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, power minimold (SOT-89).

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD

DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, power mini mold (

NPN EPITAXIAL SILICON RF TRANSISTOR FOR

DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE= 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, power minimold (SOT-89).

Low-Frequency General-Purpose Amp, Applications(High hFE)

Low-Frequency General-Purpose Amplifier, Applications (High hFE) Features • High DC current gain (hFE=800 to 3200). • Low collector-to-emitter saturation voltage : VCE(sat)≤0.5V max. • High VEBO : VEBO≥15V. • Small size making it easy to provide high-density, hybrid ICs. Applicati

NPN Epitaxial Planar Silicon Transistor

Features • High DC current gain (hFE=800 to 3200). • Low collector-to-emitter saturation voltage : VCE(sat) ≤ 0.5V max. • High VEBO : VEBO ≥ 15V. • Small size making it easy to provide high-density, hybrid ICs.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage switching transistor APPLICATIONS ·For switching regulator and general purpose applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage switching transistor APPLICATIONS ·For switching regulator and general purpose applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage switching transistor APPLICATIONS ·For switching regulator and general purpose applications

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose

NPN EPITAXIAL TYPE (LOW FREQUENCY, DRIVER STAGE AMPLIFIER SWITCHING APPLICATIONS)

LOW FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. Excellent hFE Linearity : hFE(2) = 35(Min.), (VCE = 2V, IC = 300mA) Complementary to 2SA1811

High-Voltage Amplifier, High-Voltage Switching Applications

High-Voltage Amplifier, High-Voltage Switching Applications Features • High breakdown voltage (VCEO min=2100V). • Small Cob (Cob typ=1.3pF). • Wide ASO. • High reliability (Adoption of HVP process).

High-Voltage Amp, High-Voltage Switching Applications

High-Voltage Amp, High-Voltage Switching Applications

2100V/10mA High-Voltage Amplifier,High-Voltage Switching Applications

2100V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features • High breakdown voltage(VCEO min=2100V). • Small Cob(typical Cob=1.3pF). • Wide ASO. • High reliability(Adoption of HVP process). • Full isolation package.

High frequency amplifier transistor RF switching (6V, 50mA)

Features 1) Very low output-on resistance (Ron). 2) Low capacitance.

FOR AUDIO TEMPERATUEE COMPENSATION CIRCUITS

Features 1) Very low output-on resistance (Ron). 2) Low capacitance.

Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)

■ Features ● Satisfactory linearity of forward current transfer ratio hFE. ● High collector to emitter voltage VCEO. ● Small collector output capacitance Cob.

High-Frequency Amplifier Transistor (18V, 50mA, 1.5GHz)

Features 1) High transition frequency. (Typ. fT = 1.5GHz) 2) Small rbb’⋅Ccand high gain. (Typ. 6ps) 3) Small NF.

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz)

Features 1) High transition frequency. (Typ. fT = 1.5GHz) 2) Small rbb’⋅Ccand high gain. (Typ. 6ps) 3) Small NF.

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz)

Features 1) High transition frequency. (Typ. fT = 1.5GHz) 2) Small rbb’⋅Ccand high gain. (Typ. 6ps) 3) Small NF.

High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)

Features 1) High transition frequency. (Typ. fT= 1.5GHz) 2) Small rbbí⋅Cc and high gain. (Typ. 4ps) 3) Small NF.

High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)

Features 1) High transition frequency. (Typ. fT= 1.5GHz) 2) Small rbbí⋅Cc and high gain. (Typ. 4ps) 3) Small NF.

High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)

Features 1) High transition frequency. (Typ. fT= 1.5GHz) 2) Small rbbí⋅Cc and high gain. (Typ. 4ps) 3) Small NF.

20V/8A Switching Applications

20V/8A Switching Applications Features • Adoption of MBIT process. • Low saturation voltage. • Fast switching speed. • Large current capacity. • It is possible to make appliances more compact because its height on board is 9.5mm. • Effective in automatic inserting and counting stocked amoun

50V/5A Switching Applications

50V/5A Switching Applications Features • Low collector-to-emitter saturation voltage. • High Gain-Bandwidth Product. • Excellent linearity of DC Current Gain. • Fast switching speed. Applications • Relay drivers, high-speed inverters, converters, and other general high-current switching app

50V/8A Switching Applications

50V/8A Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current

100V/3A Switching Applications

100V/3A Switching Applications Features · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current Gain. · Fast switching speed. Applications · Relay drivers, high-speed inverters, converters, and other general high-current switchin

100V/4A Switching Applications

100V/4A Switching Applications Features · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current Gain. · Fast switching speed. Applications · Relay drivers, high-speed inverters, converters, and other general high-curren

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

High Voltage Driver Applications?????????????

High-Voltage Driver Applications Features • Large current capacity (IC=2A). • High breakdown voltage (VCEO≥400V). • Possible to offer the 2SA1830/2SC4734 devices in a tape reel packaging, which facilitates automatic insertion.

27MHz CB Transceiver Driver Applications

27MHz CB Transceiver Driver Applications Features • Large power type such as PC=1.5W when used without heatsink. • It is possible to make appliances more compact because its height on board is 9.5mm. • Effective in automatic inserting and counting stocked amount because of being provided for

High-hFE, Low-Frequency General-Purpose Amp Applications??????????

High hFE, Low-Frequency General-Purpose Amplifier Applications Features • Large current (IC=2A). • Adoption of MBIT process. • High DC current gain (hFE=800 to 3200). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). • High emitter-to-base voltage (VEBO≥15V). • Large power type

50V/2A Driver Applications

50V/2A Driver Applications

NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 120 to 700 • Complementary to 2SA1832 • Small package

0.15A , 60V NPN Plastic Encapsulated Transistor

FEATURES ● High Voltage and High Current ● High DC Current Gain ● Complementary to 2SA1832

NPN TRANSISTOR

FEATURES: High voltage and high current Excellent hFElinearity High hFE Complementary to 2SA1832

Silicon NPN Epitaxial Planar type

■ Features ● High Voltage and Current ● High DC Current Gain ● Small Package ● Complementary to 2SA1832

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications High Voltage: VCEO= 50 V High Current: IC= 150 mA (max) High hFE: hFE= 120 to 400 Excellent hFELinearity : hFE(IC= 0.1 mA)/hFE(IC= 2 mA) = 0.95 (typ.) Complementary to 2SA1832FT

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.1 W (Tamb=25℃) Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 ~ 400 • Excellent hFE Linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Complementary to 2SA1832FV

SOT-523 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Voltage and Current ● High DC Current Gain ● Complementary to 2SA1832 ● Small Package APPLICATIONS ● General Purpose Amplification

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 ~ 400 • Excellent hFE Linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Complementary to 2SA1832FV

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications High voltage and high current: VCEO= 50 V, IC= 150 mA (max) Excellent hFElinearity: hFE(IC= 0.1 mA)/hFE(IC= 2 mA) = 0.95 (typ.) High hFE: hFE= 120~400 Complementary to 2SA1832F Small package

Audio Frequency General Purpose Amplifier Applications

FEATURES ● High voltage and high current. ● High hFE. ● Complementary to 2SA1832. ● Small package.

NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Audio Frequency General Purpose Amplifier Applications High voltage and high current: VCEO= 50 V, IC= 150 mA (max) Excellent hFElinearity: hFE(IC= 0.1 mA)/hFE(IC= 2 mA) = 0.95 (typ.) High hFE: hFE= 120~400 Complementary to 2SA1832F Small package

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications High voltage and high current: VCEO= 50 V, IC= 150 mA (max) Excellent hFElinearity: hFE(IC= 0.1 mA)/hFE(IC= 2 mA) = 0.95 (typ.) High hFE: hFE= 120~400 Complementary to 2SA1832F Small package

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications High Voltage: VCEO= 50 V High Current: IC= 150 mA (max) High hFE: hFE= 120 to 400 Excellent hFELinearity : hFE(IC= 0.1 mA)/hFE(IC= 2 mA) = 0.95 (typ.) Complementary to 2SA1832FT

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications High Voltage: VCEO= 50 V High Current: IC= 150 mA (max) High hFE: hFE= 120 to 400 Excellent hFELinearity : hFE(IC= 0.1 mA)/hFE(IC= 2 mA) = 0.95 (typ.) Complementary to 2SA1832FT

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 ~ 400 • Excellent hFE Linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Complementary to 2SA1832FV

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 ~ 400 • Excellent hFE Linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Complementary to 2SA1832FV

Power Bipolar Transistors

Power Bipolar Transistors

Power Bipolar Transistors