TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications High Voltage: VCEO= 50 V High Current: IC= 150 mA (max) High hFE: hFE= 120 to 400 Excellent hFELinearity : hFE(IC= 0.1 mA)/hFE(IC= 2 mA) = 0.95 (typ.) Complementary to 2SA1832FT

NPN TRANSISTOR

FEATURES: High voltage and high current Excellent hFElinearity High hFE Complementary to 2SA1832

Silicon NPN Epitaxial Planar type

■ Features ● High Voltage and Current ● High DC Current Gain ● Small Package ● Complementary to 2SA1832

NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 120 to 700 • Complementary to 2SA1832 • Small package

NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Audio Frequency General Purpose Amplifier Applications High voltage and high current: VCEO= 50 V, IC= 150 mA (max) Excellent hFElinearity: hFE(IC= 0.1 mA)/hFE(IC= 2 mA) = 0.95 (typ.) High hFE: hFE= 120~400 Complementary to 2SA1832F Small package

Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications

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