HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES • Low noise : NF = 1.4 dB TYP. @ VCE = 3 V, IC = 7 mA, f =

Silicon Transistor

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

Low Noise, High Gain

DESCRIPTION • Low Noise NF = 1.4 dB TYP., @VCE = 3 V, IC = 7 mA, f = 1.0 GHz • High Gain ︱ S21e︱ 2 = 12 dB TYP. @VCE = 3 V, IC = 7 mA, f = 1.0 GHz APPLICATIONS • Designed for VHF, UHF low noise amplifier.

NPN EPITAXIAL SILICON RF TRANSISTOR

DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES • Low noise : NF = 1.4 dB TYP. @ VCE = 3 V, IC = 7

NPN EPITAXIAL SILICON RF TRANSISTOR

DESCRIPTION The NE68130 / 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES • Low noise : NF = 1.4 dB TYP. @ VCE = 3 V, IC =