POWER TRANSISTOR

POWER TRANSISTORS

High-voltage Amplifier Transistor(120V, 50mA)

Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S.

Silicon Epitaxial Planar Transistor

FEATURES ● Excellent hFE linearity. ● Power dissipation:PCM=200mW APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor.

TRANSISTOR (NPN)

FEATURES ● High Breakdown Voltage ● Complements the 2SA1579

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Breakdown Voltage ● Complements the 2SA1579

High-voltage Amplifier Transistor

Features ● High breakdown voltage.(VCEO = 120V)

SOT-323 Plastic-Encapsulate Transistors

FEATURES High Breakdown Voltage Complements the 2SA1579

NPN 50mA 120V High Voltage Amplifier transistors

Features 1) High Breakdown Voltage (VCEO=120V). 2) Complementary PNP Types : 2SA1579 (UMT3) / 2SA1514K (SMT3) 3) Complex transistors : IMX8 (SMT6) 4) Lead Free/RoHS Compliant.

NPN 50mA 120V High Voltage Amplifier transistors

Features 1) High Breakdown Voltage (VCEO=120V). 2) Complementary PNP Types : 2SA1579 (UMT3) / 2SA1514K (SMT3) 3) Complex transistors : IMX8 (SMT6) 4) Lead Free/RoHS Compliant.

Silicon Epitaxial Planar Transistor

FEATURES ● Excellent hFE linearity. ● Power dissipation:PCM=200mW APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor.

High-Definition CRT Display Applications?

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

Switching Regulator Applications

400V/4A Switching Regulator Applications Features • High breakdown voltage and high reliability. • Fast switching speed. • Wide ASO. • Adoption of MBIT process.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High breakdown voltage • Fast switching speed • Wide area of safe operation APPLICATIONS • For switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High breakdown voltage • Fast switching speed • Wide area of safe operation APPLICATIONS • For switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High breakdown voltage and high reliability • Fast switching speed. • Wide area of safe operation APPLICATIONS • 400V/7A switching regulator applications

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 500V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):0.8V(Max) @IC=4A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers

Switching Regulator Applications

400V/7A Switching Regulator Applications Features • High breakdown voltage and high reliability. • Fast switching speed. • Wide ASO. • Adoption of MBIT process.

Switching Regulator Applications

400V/10A Switching Regulator Applications Features · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High breakdown voltage and high reliability ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·400V/10A switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High breakdown voltage and high reliability ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·400V/10A switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High reliability ·High breakdown voltage ·Fast switching speed ·Wide ASO(Safe Operating Area) APPLICATIONS ·400V/12A switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High reliability ·High breakdown voltage ·Fast switching speed ·Wide ASO(Safe Operating Area) APPLICATIONS ·400V/12A switching regulator applications

Switching Regulator Applications

400V/12A Switching Regulator Applications Features · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.

Switching Regulator Applications

400V/16A Switching Regulator Applications Features · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High reliability ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·400V/16A switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High reliability ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·400V/16A switching regulator applications

POWER TRANSISTOR

POWER TRANSISTORS

POWER TRANSISTOR

POWER TRANSISTORS

Switching Regulator Applications

400V/25A Switching Regulator Applications Features · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.

isc Silicon NPN Power Transistor

Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications.

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Fast switching speed ·Wide area of safe operation ·High voltage,high reliability APPLICATIONS ·For switching regulator applications

Silicon NPN triple diffusion planar transistor

Silicon NPN triple diffusion planar transistor 25A/400V Switching Regulator Applications FEATURES High- speed switching High breakdown voltage and high reliability Wide SOA( Safe Operation Area) TO- 3 Ppackage which can be installed to the heat sink with one screw APPLICAT

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • High voltage ,high speed • Wide area of safe operation APPLICATIONS • For horizontal deflection output application

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • High voltage ,high speed • Wide area of safe operation APPLICATIONS • For horizontal deflection output application

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For horizontal deflection output ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE

Switching Applications(with Bias Resistance)

Applications * Switching circuit, inverter circuit, interface circuit, driver circuit

Switching Applications

Switching Applications (with Bias Resistance)

NPN Epitaxial Planar Silicon Transistor

FEATURES ● Low VCE(sat). VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) ● Excellent current gain characteristics. ● Complements to 2SA1585.

TRANSISTOR (NPN)

FEATURES ● Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) ● Excellent current gain characteristics. ● Complements to 2SA1585

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) ● Excellent current gain characteristics. ● Complements to 2SA1585

Low Frequency Transistor

■ Features ● Collector Current Capability IC=3A ● Collector Emitter Voltage VCEO=20V ● Complements to 2SA1585

Plastic-Encapsulate Transistors

FEATURES • Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) • Excellent current gain characteristics. • Complements to 2SA1585

丝印代码：4115Q；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) Excellent current gain characteristics. Complements to 2SA1585

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Low VCE(sat),excellent current gain characteristics； complementary pair with 2SA1585. Applications Low frequency amplifier.

NPN Plastic Encapsulated Transistor

FEATURES ● Small Flat Package ● General Purpose Application ● Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)

TRANSISTOR

DESCRIPTION NPN Epitaxial planar Silicon Transistor FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.)

TRANSISTOR

DESCRIPTION NPN Epitaxial planar Silicon Transistor FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.)

NPN Plastic Encapsulated Transistor

FEATURES ● Small Flat Package ● General Purpose Application ● Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)

NPN Plastic Encapsulated Transistor

FEATURES ● Small Flat Package ● General Purpose Application ● Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)

NPN Silicon General Purpose Transistor

FEATURES Power dissipation PD: 0.3 W (Tamb=25°C) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55°C to +150°C

TRANSISTOR (NPN)

FEATURES Power dissipation PD: 0.3 W (Tamb=25℃) Collector current I CM: 3 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TO-92S Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat). ● Excellent Current Gain Characteristics. ● Complements The 2SA1585S.

Low Frequency Transistor (20V, 3A)

Features 1) Low VCE(sat). VCE(sat)= 0.2V (Typ.) (IC/IB= 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S.

NPN Plastic Encapsulated Transistor

FEATURES ● Small Flat Package ● General Purpose Application ● Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)

NPN Plastic-Encapsulate Transistors

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM = 0.3W(Tamb=25°C) • Collector current: ICM = 3A • Collector-base voltage: V(BR)CBO

NPN Plastic-Encapsulate Transistors

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM = 0.3W(Tamb=25°C) • Collector current: ICM = 3A • Collector-base voltage: V(BR)CBO

NPN Plastic-Encapsulate Transistors

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM = 0.3W(Tamb=25°C) • Collector current: ICM = 3A • Collector-base voltage: V(BR)CBO

General Purpose Transistor NPN Silicon

FEATURES * High voltage and high current * Excellent hFE linearity * High hFE * Low noise * Complementary to 2SA1586

NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Audio Frequency General Purpose Amplifier Applications High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1586 • S