POWER TRANSISTOR

POWER TRANSISTORS

Switching Regulator Applications

400V/25A Switching Regulator Applications Features · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Fast switching speed ·Wide area of safe operation ·High voltage,high reliability APPLICATIONS ·For switching regulator applications

isc Silicon NPN Power Transistor

Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications.

Silicon NPN triple diffusion planar transistor

Silicon NPN triple diffusion planar transistor 25A/400V Switching Regulator Applications FEATURES High- speed switching High breakdown voltage and high reliability Wide SOA( Safe Operation Area) TO- 3 Ppackage which can be installed to the heat sink with one screw APPLICAT

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • High voltage ,high speed • Wide area of safe operation APPLICATIONS • For horizontal deflection output application

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For horizontal deflection output ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • High voltage ,high speed • Wide area of safe operation APPLICATIONS • For horizontal deflection output application

Switching Applications(with Bias Resistance)

Applications * Switching circuit, inverter circuit, interface circuit, driver circuit

Switching Applications

Switching Applications (with Bias Resistance)

Low Frequency Transistor

■ Features ● Collector Current Capability IC=3A ● Collector Emitter Voltage VCEO=20V ● Complements to 2SA1585

TRANSISTOR (NPN)

FEATURES ● Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) ● Excellent current gain characteristics. ● Complements to 2SA1585

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) Excellent current gain characteristics. Complements to 2SA1585

NPN Epitaxial Planar Silicon Transistor

FEATURES ● Low VCE(sat). VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) ● Excellent current gain characteristics. ● Complements to 2SA1585.

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) ● Excellent current gain characteristics. ● Complements to 2SA1585

NPN Plastic Encapsulated Transistor

FEATURES ● Small Flat Package ● General Purpose Application ● Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)

Plastic-Encapsulate Transistors

FEATURES • Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) • Excellent current gain characteristics. • Complements to 2SA1585

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Low VCE(sat),excellent current gain characteristics； complementary pair with 2SA1585. Applications Low frequency amplifier.

TRANSISTOR

DESCRIPTION NPN Epitaxial planar Silicon Transistor FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.)

TRANSISTOR

DESCRIPTION NPN Epitaxial planar Silicon Transistor FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.)

NPN Plastic Encapsulated Transistor

FEATURES ● Small Flat Package ● General Purpose Application ● Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)

NPN Plastic Encapsulated Transistor

FEATURES ● Small Flat Package ● General Purpose Application ● Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)

TRANSISTOR (NPN)

FEATURES Power dissipation PD: 0.3 W (Tamb=25℃) Collector current I CM: 3 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TO-92S Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat). ● Excellent Current Gain Characteristics. ● Complements The 2SA1585S.

NPN Silicon General Purpose Transistor

FEATURES Power dissipation PD: 0.3 W (Tamb=25°C) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55°C to +150°C

Low Frequency Transistor (20V, 3A)

Features 1) Low VCE(sat). VCE(sat)= 0.2V (Typ.) (IC/IB= 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S.

NPN Plastic Encapsulated Transistor

FEATURES ● Small Flat Package ● General Purpose Application ● Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)

NPN Plastic-Encapsulate Transistors

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM = 0.3W(Tamb=25°C) • Collector current: ICM = 3A • Collector-base voltage: V(BR)CBO

NPN Plastic-Encapsulate Transistors

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM = 0.3W(Tamb=25°C) • Collector current: ICM = 3A • Collector-base voltage: V(BR)CBO

NPN Plastic-Encapsulate Transistors

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM = 0.3W(Tamb=25°C) • Collector current: ICM = 3A • Collector-base voltage: V(BR)CBO

Silicon NPN Epitaxial

Features • High voltage and high current: VCEO = 50 V, IC = 150 mA (max). • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ). • High hFE: hFE = 70 700. • Low noise: NF = 1dB (typ.), 10dB (max). • Small package.

General Purpose Transistor NPN Silicon

FEATURES * High voltage and high current * Excellent hFE linearity * High hFE * Low noise * Complementary to 2SA1586

NPN Plastic-Encapsulate Transistor

FEATURES ● High voltage and high current. ● Excellent hFE linearity. ● High hFE. ● Low noise. ● Complementary to 2SA1586

TRANSISTOR (NPN)

FEATURES ● High voltage and high current ● Excellent hFE linearity ● High hFE ● Low noise ● Complementary to 2SA1586

NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Audio Frequency General Purpose Amplifier Applications High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1586 • S

Silicon Epitaxial Planar Transistor

FEATURES ● Excellent hFE linearity. ● High voltage and current. ● Complementary to 2SA1586. ● Small package. APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor. ● Switching and amplification.

SOT-323 Plastic-Encapsulate Transistors

FEATURES High voltage and high current Excellent hFE linearity High hFE Low noise Complementary to 2SA1586

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • High voltage and high current • Complementary to 2SA1586 • Halogen free available upon request by adding suffi

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • High voltage and high current • Complementary to 2SA1586 • Halogen free available upon request by adding suffi

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • High voltage and high current • Complementary to 2SA1586 • Halogen free available upon request by adding suffi

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • High voltage and high current • Complementary to 2SA1586 • Halogen free available upon request by adding suffi

Silicon NPN Epitaxial

Features ● High voltage ● High hFE ● Low noise ● Small package

NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200 to 700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1587 • Small package

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200 to 700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1587 • Small package

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200 to 700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1587 • Small package

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200 to 700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1587 • Small package

NPN EPITAXIAL TYPE (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER, SWITCHING SPPLICATIONS)

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) • Complementary to 2SA1588

Silicon NPN Epitaxial

Features ● Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)

800V/15A Driver Applications

NPN Triple Diffused Planar Silicon Darlington Transistor 800V/15A Driver Applications Features · High speed (adoption of MBIT process). · High breakdown voltage (VCBO=1500V). · On-chip damper diode. · High reliability. Applications · Induction cookers. · High-voltage

Silicon NPN Power Transistors

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Silicon NPN Power Transistors

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Silicon NPN Power Transistors

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Silicon NPN Power Transistors

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NPN Transistors

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NPN Plastic Encapsulated Transistor

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NPN Transistors

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NPN Transistors

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NPN Transistors

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NPN Transistors

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NPN Transistors

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