TRANSISTOR

DESCRIPTION NPN Epitaxial planar Silicon Transistor FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.)

TRANSISTOR

DESCRIPTION NPN Epitaxial planar Silicon Transistor FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.)

Low Frequency Transistor

■ Features ● Collector Current Capability IC=3A ● Collector Emitter Voltage VCEO=20V ● Complements to 2SA1585

NPN Plastic-Encapsulate Transistors

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM = 0.3W(Tamb=25°C) • Collector current: ICM = 3A • Collector-base voltage: V(BR)CBO

丝印代码：TP；Low Frequency Transistor (20V, 3A)

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NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features ● Low VCE(sat) ● Excellent current gain characteristics