2SC409晶体管资料

  • 2SC409别名:2SC409三极管、2SC409晶体管、2SC409晶体三极管

  • 2SC409生产厂家:日本新电元工业股份公司

  • 2SC409制作材料:Si-NPN

  • 2SC409性质:开关管 (S)_功率放大 (L)

  • 2SC409封装形式:直插封装

  • 2SC409极限工作电压:200V

  • 2SC409最大电流允许值:10A

  • 2SC409最大工作频率:<1MHZ或未知

  • 2SC409引脚数:2

  • 2SC409最大耗散功率:100W

  • 2SC409放大倍数:β>10

  • 2SC409图片代号:E-44

  • 2SC409vtest:200

  • 2SC409htest:999900

  • 2SC409atest:10

  • 2SC409wtest:100

  • 2SC409代换 2SC409用什么型号代替:BU109,BU110,BU210,BUX17A,BUX17B,BUX17C,BUX42,BUY18,BUY21,BUY74,2SC2944,3DD164C,

2SC409价格

参考价格:¥0.2638

型号:2SC4097T106Q 品牌:Rohm 备注:这里有2SC409多少钱,2025年最近7天走势,今日出价,今日竞价,2SC409批发/采购报价,2SC409行情走势销售排行榜,2SC409报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SC409

POWERTRANSISTOR

POWERTRANSISTORS

SHINDENGENShindengen Electric Mfg.Co.Ltd

日本新电元工业株式会社

SHINDENGEN

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD

DESCRIPTION The2SC4092isanNPNsiliconepitaxialtransistordesignedforlow-noiseamplifieratVHF,UHFband.Itiscontainedin4pinsmini-moldpackagewhichenableshigh-isolationgain. FEATURES •NF=1.5dBTYP.@f=1.0GHz,VCE=10V,IC=5mA •|S21e|2=12dBTYP.@f=1.0GHz,

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD

DESCRIPTION The2SC4093isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithaslargedynamicrangeandgoodcurrentcharacteritics,andiscontatinedina4pinsmini-moldpackagewhichenableshigh-isolationgain. FEATURES •LowNoise NF

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNEPITAXIALSILICONRFTRANSISTOR

DESCRIPTION TheNE85639/2SC4093isaNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithaslargedynamicrangeandgoodcurrentcharacteristics,andiscontainedina4-pinminimoldpackagewhichenableshigh-isolationgain. FEATURES •LowNoise

CEL

California Eastern Labs

CEL

NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION

DESCRIPTION The2SC4093isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithaslargedynamicrangeandgoodcurrentcharacteristics,andiscontainedina4-pinminimoldpackagewhichenableshigh-isolationgain. FEATURES •LowNoise NF=

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD

DESCRIPTION The2SC4093isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithaslargedynamicrangeandgoodcurrentcharacteritics,andiscontatinedina4pinsmini-moldpackagewhichenableshigh-isolationgain. FEATURES •LowNoise NF

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD

DESCRIPTION The2SC4093isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithaslargedynamicrangeandgoodcurrentcharacteritics,andiscontatinedina4pinsmini-moldpackagewhichenableshigh-isolationgain. FEATURES •LowNoise NF

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD

DESCRIPTION The2SC4094isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.Lownoisefigure,highgain,andhighcurrentcapabilityachieveaverywidedynamicrangeandexcellentlinearity.Thisachievedbydirectnitridep

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

MICROWAVELOWNOISEAMPLIFIER

DESCRIPTION TheNE68139/2SC4094isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.Low-noisefigure,highgain,andhighcurrentcapabilityachieveaverywidedynamicrangeandexcellentlinearity.Thisachievedbydirect

CEL

California Eastern Labs

CEL

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR

DESCRIPTION The2SC4094isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.Lownoisefigure,highgain,andhighcurrentcapabilityachieveaverywidedynamicrangeandexcellentlinearity.Thisachievedbydirectnitridepa

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

MICROWAVELOWNOISEAMPLIFIER

DESCRIPTION TheNE68039/2SC4095isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.NE68039/2SC4095featuresexcellentpowergainwithverylow-noisefigures.NE68039/2SC4095employsdirectnitiridepassivatedbasesurf

CEL

California Eastern Labs

CEL

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR

DESCRIPTION The2SC4095isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.2SC4095featuresexcellentpowergainwithverylow-noisefigures.2SC4095employsdirectnitiridepassivatedbasesurfaceprocess(DNPprocess)wh

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD

DESCRIPTION The2SC4095isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.2SC4095featuresexcellentpowergainwithverylow-noisefigures.2SC4095employsdirectnitiridepassivatedbasesurfaceprocess(DNPprocess)whic

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

MediumPowerTransistor(32V,0.5A)

MediumPowerTransistor(32V,0.8A) Features 1)VeryLowVCE(sat). VCE(sat)=0.1V(Typ.) ̈́IC/IB=500УA/50mAͅ 2)Highcurrentcapacityincompactpackage. 3)Complementsthe2SB1197K.

ROHMRohm

罗姆罗姆半导体集团

ROHM

MediumPowerTransistor

Features ●HighICMax.ICMax.=0.5A ●LowVCE(sat).Optimalforlowvoltageoperation.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

MediumPowerTransistor

FEATURES •HighICMax.ICMax=0.5A. •LowVCE(sat).Optimalforlowvoltageoperation. •Complementaryto2SA1577

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

SiliconEpitaxialPlanarTransistor

FEATURES ●ExcellenthFElinearity. ●Powerdissipation:PCM=200mW APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

SOT-323Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighICMax.=0.5A ●LowVCE(sat).Optimalforlowvoltageoperation. ●Complementsthe2SA1577

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

TRANSISTOR(NPN)

FEATURES PowerdissipationPCM:200mW(Tamb=25℃) CollectorcurrentICM:500mA Collector-basevoltageV(BR)CBO:40V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳深圳市永而佳实业有限公司

WINNERJOIN

SiliconNPNtransistorinaSOT-323PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-323PlasticPackage. Features LowCob,complementsthe2SA1577. Applications Mediumpowertransistor.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

TRANSISTOR(NPN)

FEATURES ●HighICMax.ICMax=0.5A ●LowVCE(sat).Optimalforlowvoltageoperation. ●Complementsthe2SA1577

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

SOT-323Plastic-EncapsulateTransistors

FEATURES HighICMax.=0.5A LowVCE(sat).Optimalforlowvoltageoperation. Complementsthe2SA1577

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

NPNSiliconEpitaxialTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighIcmax.Icmax=0.5A •LowVCE(SAT).Optimalforlowvoltageoperation. •EpoxymeetsUL94V-0flammabilityrating •Moisu

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

MediumPowerNPNTransistor

FEATURE *Surfacemountpackage.(SC-70/SOT-323) *LowsaturationvoltageV *Lowcob.Cob=6.0pF(Typ.)CE(sat)=0.4V(max.)(IC=500mA) *PC=200mW(mountedonceramicsubstrate). *Highsaturationcurrentcapability. APPLICATION *MediumPowerAmplifier.

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

CHENMKO

NPNSiliconEpitaxialTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighIcmax.Icmax=0.5A •LowVCE(SAT).Optimalforlowvoltageoperation. •EpoxymeetsUL94V-0flammabilityrating •Moisu

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconEpitaxialTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighIcmax.Icmax=0.5A •LowVCE(SAT).Optimalforlowvoltageoperation. •EpoxymeetsUL94V-0flammabilityrating •Moisu

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

SiliconEpitaxialPlanarTransistor

FEATURES ●ExcellenthFElinearity. ●Powerdissipation:PCM=200mW APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

High-frequencyAmplifierTransistor

Features ●Lowcollectorcapacitance.(Cob:Typ.1.3pF) ●Lowrbb,highgain,andexcellentnoisecharacteristics.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

NPNPlastic-EncapsulateTransistor

FEATURES •LowCollectorCapacitance. •HighGain.

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

High-frequencyAmplifierTransistor(25V,50mA,300MHz)

High-frequencyAmplifierTransistor (25V,50mA,300MHz) Features 1)Lowcollectorcapacitance.(Cob:Typ.1.3pF) 2)Lowrbb,highgain,andexcellentnoisecharacteristics.

ROHMRohm

罗姆罗姆半导体集团

ROHM

TRANSISTOR(NPN)

FEATURES ●LowCollectorCapacitance ●HighGain

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

SiliconNPNtransistorinaSOT-323PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-323PlasticPackage. Features Hightransitionfrequency,smallcollectoroutputcapacitancecomplementarypair. Applications Audiofrequencyamplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

SOT-323Plastic-EncapsulateTransistors

FEATURES LowCollectorCapacitance HighGain

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=25V(Min) ·DCCurrentGain- :hFE=56(Min)@IC=1mA ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforaudioandgeneralpurposeapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SOT-323Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●LowCollectorCapacitance ●HighGain

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

High-frequencyAmplifierTransistor

Features 1)Lowcollectorcapacitance.(Cob:Typ.1.3pF) 2)Lowrbb,highgain,andexcellentnoisecharacteristics.

ROHMRohm

罗姆罗姆半导体集团

ROHM

NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION4-PINMINIMOLD

文件:175.25 Kbytes Page:9 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

封装/外壳:TO-253-4,TO-253AA 包装:托盘 描述:RF TRANS NPN 12V 7GHZ SOT143 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

California Eastern Labs

CEL

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD

文件:323.65 Kbytes Page:10 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

封装/外壳:TO-253-4,TO-253AA 包装:托盘 描述:RF TRANS NPN 10V 9GHZ SOT143 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

California Eastern Labs

CEL

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD

文件:329.19 Kbytes Page:10 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

MediumPowerTransistor(32V,0.5A)

文件:66.54 Kbytes Page:4 Pages

ROHMRohm

罗姆罗姆半导体集团

ROHM

NPNPlastic-EncapsulateTransistor

文件:993.93 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

NPNPlastic-EncapsulateTransistor

文件:993.93 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

NPNPlastic-EncapsulateTransistor

文件:202.31 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

NPNTRANSISTOR

文件:129.919 Kbytes Page:1 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳深圳市永而佳实业有限公司

WINNERJOIN

NPNSiliconEpitaxialTransistors

文件:285.96 Kbytes Page:3 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconEpitaxialTransistors

文件:285.96 Kbytes Page:3 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconEpitaxialTransistors

文件:285.96 Kbytes Page:3 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconEpitaxialTransistors

文件:285.96 Kbytes Page:3 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

MediumPowerTransistor(32V,0.5A)

文件:66.54 Kbytes Page:4 Pages

ROHMRohm

罗姆罗姆半导体集团

ROHM

High-frequencyAmplifierTransistor(25V,50mA,300MHz)

文件:147.11 Kbytes Page:3 Pages

ROHMRohm

罗姆罗姆半导体集团

ROHM

High-frequencyAmplifierTransistor(25V,50mA,300MHz)

文件:172.69 Kbytes Page:3 Pages

ROHMRohm

罗姆罗姆半导体集团

ROHM

NPNPlastic-EncapsulateTransistor

文件:83.33 Kbytes Page:1 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

2SC409产品属性

  • 类型

    描述

  • 型号

    2SC409

  • 制造商

    SHINDENGEN

  • 制造商全称

    Shindengen Electric Mfg.Co.Ltd

  • 功能描述

    POWER TRANSISTOR

更新时间:2025-7-20 14:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
24+
TO-3
10000
NEC
1922+
SOT-143
35689
原装进口现货库存专业工厂研究所配单供货
NEC(日电电子)
24+
N/A
9789
原厂可订货,技术支持,直接渠道。可签保供合同
ROHS
25+
SOT-323
32000
ROHS全新特价2SC4098T106P即刻询购立享优惠#长期有货
ROHM
21+
24000
UMT3 (SOT-323) (SC-70)
ROHM
2020+
UMT3
9000
百分百原装正品 真实公司现货库存 本公司只做原装 可
NEC
18+
SOT-143
2600
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
23+
SOT-143
31000
全新原装现货
ROHM
2106+
SOT323
45000
全新原装公司现货
NK/南科功率
2025+
SOT-323
986966
国产

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