POWER TRANSISTOR

POWER TRANSISTORS

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

DESCRIPTION The 2SC4092 is an NPN silicon epitaxial transistor designed for low-noise amplifier at VHF, UHF band. It is contained in 4 pins mini-mold package which enables high-isolation gain. FEATURES • NF = 1.5 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA • |S21e|2 = 12 dB TYP. @f = 1.0 GHz,

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

DESCRIPTION The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteritics, and is contatined in a 4 pins mini-mold package which enables high-isolation gain. FEATURES • Low Noise NF

NPN EPITAXIAL SILICON RF TRANSISTOR

DESCRIPTION The NE85639 / 2SC4093 is a NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristics, and is contained in a 4-pin minimold package which enables high-isolation gain. FEATURES • Low Noise

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

DESCRIPTION The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristics, and is contained in a 4-pin minimold package which enables high-isolation gain. FEATURES • Low Noise NF =

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

DESCRIPTION The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteritics, and is contatined in a 4 pins mini-mold package which enables high-isolation gain. FEATURES • Low Noise NF

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

DESCRIPTION The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteritics, and is contatined in a 4 pins mini-mold package which enables high-isolation gain. FEATURES • Low Noise NF

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

DESCRIPTION The 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This achieved by direct nitride p

MICROWAVE LOW NOISE AMPLIFIER

DESCRIPTION The NE68139 / 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This achieved by direct

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This achieved by direct nitride pa

MICROWAVE LOW NOISE AMPLIFIER

DESCRIPTION The NE68039 / 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. NE68039 / 2SC4095 features excellent power gain with very low-noise figures. NE68039 / 2SC4095 employs direct nitiride passivated base surf

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. 2SC4095 features excellent power gain with very low-noise figures. 2SC4095 employs direct nitiride passivated base surface process (DNP process) wh

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

DESCRIPTION The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. 2SC4095 features excellent power gain with very low-noise figures. 2SC4095 employs direct nitiride passivated base surface process (DNP process) whic

Medium Power Transistor (32V, 0.5A)

Medium Power Transistor (32V, 0.8A) Features 1) Very Low VCE(sat). VCE(sat)= 0.1V(Typ.) ̈́IC/ IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K.

Medium Power Transistor

Features ● High ICMax. ICMax. = 0.5A ● Low VCE(sat). Optimal for low voltage operation.

Medium Power Transistor

FEATURES • High ICMax. ICMax=0.5A. • Low VCE(sat). Optimal for low voltage operation. • Complementary to 2SA1577

Silicon Epitaxial Planar Transistor

FEATURES ● Excellent hFE linearity. ● Power dissipation:PCM=200mW APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor.

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High ICMax. =0.5A ● Low VCE(sat).Optimal for low voltage operation. ● Complements the 2SA1577

TRANSISTOR(NPN)

FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 500 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN transistor in a SOT-323 Plastic Package

Descriptions Silicon NPN transistor in a SOT-323 Plastic Package. Features Low Cob, complements the 2SA1577. Applications Medium power transistor.

TRANSISTOR (NPN)

FEATURES ● High ICMax. ICMax=0.5A ● Low VCE(sat).Optimal for low voltage operation. ● Complements the 2SA1577

SOT-323 Plastic-Encapsulate Transistors

FEATURES High ICMax. =0.5A Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1577

NPN Silicon Epitaxial Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High Icmax. Icmax=0.5A • Low VCE(SAT). Optimal for low voltage operation. • Epoxy meets UL 94 V-0 flammability rating • Moisu

Medium Power NPN Transistor

FEATURE * Surface mount package. (SC-70/SOT-323) * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Medium Power Amplifier .

NPN Silicon Epitaxial Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High Icmax. Icmax=0.5A • Low VCE(SAT). Optimal for low voltage operation. • Epoxy meets UL 94 V-0 flammability rating • Moisu

NPN Silicon Epitaxial Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High Icmax. Icmax=0.5A • Low VCE(SAT). Optimal for low voltage operation. • Epoxy meets UL 94 V-0 flammability rating • Moisu

Silicon Epitaxial Planar Transistor

FEATURES ● Excellent hFE linearity. ● Power dissipation:PCM=200mW APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor.

High-frequency Amplifier Transistor

Features ● Low collector capacitance. (Cob : Typ. 1.3pF) ● Low rbb, high gain, and excellent noise characteristics.

NPN Plastic-Encapsulate Transistor

FEATURES • Low Collector Capacitance. • High Gain.

High-frequency Amplifier Transistor(25V, 50mA, 300MHz)

High-frequency Amplifier Transistor (25V, 50mA, 300MHz) Features 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2) Low rbb, high gain, and excellent noise characteristics.

TRANSISTOR (NPN)

FEATURES ● Low Collector Capacitance ● High Gain

Silicon NPN transistor in a SOT-323 Plastic Package

Descriptions Silicon NPN transistor in a SOT-323 Plastic Package. Features High transition frequency, small collector output capacitance complementary pair. Applications Audio frequency amplifier applications.

SOT-323 Plastic-Encapsulate Transistors

FEATURES Low Collector Capacitance High Gain

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V(Min) ·DC Current Gain- : hFE= 56(Min)@ IC= 1mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Collector Capacitance ● High Gain

High-frequency Amplifier Transistor

Features 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2) Low rbb, high gain, and excellent noise characteristics.

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD

文件：175.25 Kbytes Page：9 Pages

For amplify high frequency and low noise.

封装/外壳：TO-253-4，TO-253AA 包装：托盘 描述：RF TRANS NPN 12V 7GHZ SOT143 分立半导体产品 晶体管 - 双极（BJT）- 射频

Small Signal Silicon Bipolars

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

文件：323.65 Kbytes Page：10 Pages

封装/外壳：TO-253-4，TO-253AA 包装：托盘 描述：RF TRANS NPN 10V 9GHZ SOT143 分立半导体产品 晶体管 - 双极（BJT）- 射频

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

文件：329.19 Kbytes Page：10 Pages

Medium Power Transistor (32V, 0.5A)

文件：66.54 Kbytes Page：4 Pages

Driver Transistor

NPN Plastic-Encapsulate Transistor

文件：993.93 Kbytes Page：2 Pages

NPN Plastic-Encapsulate Transistor

文件：993.93 Kbytes Page：2 Pages

NPN Plastic-Encapsulate Transistor

文件：202.31 Kbytes Page：2 Pages

NPN TRANSISTOR

文件：129.919 Kbytes Page：1 Pages

NPN Silicon Epitaxial Transistors

文件：285.96 Kbytes Page：3 Pages

NPN Silicon Epitaxial Transistors

文件：285.96 Kbytes Page：3 Pages

NPN Silicon Epitaxial Transistors

文件：285.96 Kbytes Page：3 Pages

NPN Silicon Epitaxial Transistors

文件：285.96 Kbytes Page：3 Pages

Medium Power Transistor (32V, 0.5A)

文件：66.54 Kbytes Page：4 Pages

High-frequency Amplifier Transistor (25V, 50mA, 300MHz)

文件：147.11 Kbytes Page：3 Pages

High-frequency Amplifier Transistor (25V, 50mA, 300MHz)

文件：172.69 Kbytes Page：3 Pages

NPN Plastic-Encapsulate Transistor

文件：83.33 Kbytes Page：1 Pages