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2SC409晶体管资料
2SC409别名:2SC409三极管、2SC409晶体管、2SC409晶体三极管
2SC409生产厂家:日本新电元工业股份公司
2SC409制作材料:Si-NPN
2SC409性质:开关管 (S)_功率放大 (L)
2SC409封装形式:直插封装
2SC409极限工作电压:200V
2SC409最大电流允许值:10A
2SC409最大工作频率:<1MHZ或未知
2SC409引脚数:2
2SC409最大耗散功率:100W
2SC409放大倍数:β>10
2SC409图片代号:E-44
2SC409vtest:200
2SC409htest:999900
- 2SC409atest:10
2SC409wtest:100
2SC409代换 2SC409用什么型号代替:BU109,BU110,BU210,BUX17A,BUX17B,BUX17C,BUX42,BUY18,BUY21,BUY74,2SC2944,3DD164C,
2SC409价格
参考价格:¥0.2638
型号:2SC4097T106Q 品牌:Rohm 备注:这里有2SC409多少钱,2025年最近7天走势,今日出价,今日竞价,2SC409批发/采购报价,2SC409行情走势销售排行榜,2SC409报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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2SC409 | POWERTRANSISTOR POWERTRANSISTORS | SHINDENGENShindengen Electric Mfg.Co.Ltd 日本新电元工业株式会社 | ||
HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD DESCRIPTION The2SC4092isanNPNsiliconepitaxialtransistordesignedforlow-noiseamplifieratVHF,UHFband.Itiscontainedin4pinsmini-moldpackagewhichenableshigh-isolationgain. FEATURES •NF=1.5dBTYP.@f=1.0GHz,VCE=10V,IC=5mA •|S21e|2=12dBTYP.@f=1.0GHz, | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD DESCRIPTION The2SC4093isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithaslargedynamicrangeandgoodcurrentcharacteritics,andiscontatinedina4pinsmini-moldpackagewhichenableshigh-isolationgain. FEATURES •LowNoise NF | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
NPNEPITAXIALSILICONRFTRANSISTOR DESCRIPTION TheNE85639/2SC4093isaNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithaslargedynamicrangeandgoodcurrentcharacteristics,andiscontainedina4-pinminimoldpackagewhichenableshigh-isolationgain. FEATURES •LowNoise | CEL California Eastern Labs | |||
NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION DESCRIPTION The2SC4093isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithaslargedynamicrangeandgoodcurrentcharacteristics,andiscontainedina4-pinminimoldpackagewhichenableshigh-isolationgain. FEATURES •LowNoise NF= | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD DESCRIPTION The2SC4093isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithaslargedynamicrangeandgoodcurrentcharacteritics,andiscontatinedina4pinsmini-moldpackagewhichenableshigh-isolationgain. FEATURES •LowNoise NF | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD DESCRIPTION The2SC4093isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithaslargedynamicrangeandgoodcurrentcharacteritics,andiscontatinedina4pinsmini-moldpackagewhichenableshigh-isolationgain. FEATURES •LowNoise NF | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD DESCRIPTION The2SC4094isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.Lownoisefigure,highgain,andhighcurrentcapabilityachieveaverywidedynamicrangeandexcellentlinearity.Thisachievedbydirectnitridep | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
MICROWAVELOWNOISEAMPLIFIER DESCRIPTION TheNE68139/2SC4094isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.Low-noisefigure,highgain,andhighcurrentcapabilityachieveaverywidedynamicrangeandexcellentlinearity.Thisachievedbydirect | CEL California Eastern Labs | |||
MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR DESCRIPTION The2SC4094isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.Lownoisefigure,highgain,andhighcurrentcapabilityachieveaverywidedynamicrangeandexcellentlinearity.Thisachievedbydirectnitridepa | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
MICROWAVELOWNOISEAMPLIFIER DESCRIPTION TheNE68039/2SC4095isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.NE68039/2SC4095featuresexcellentpowergainwithverylow-noisefigures.NE68039/2SC4095employsdirectnitiridepassivatedbasesurf | CEL California Eastern Labs | |||
MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR DESCRIPTION The2SC4095isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.2SC4095featuresexcellentpowergainwithverylow-noisefigures.2SC4095employsdirectnitiridepassivatedbasesurfaceprocess(DNPprocess)wh | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD DESCRIPTION The2SC4095isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.2SC4095featuresexcellentpowergainwithverylow-noisefigures.2SC4095employsdirectnitiridepassivatedbasesurfaceprocess(DNPprocess)whic | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
MediumPowerTransistor(32V,0.5A) MediumPowerTransistor(32V,0.8A) Features 1)VeryLowVCE(sat). VCE(sat)=0.1V(Typ.) ̈́IC/IB=500УA/50mAͅ 2)Highcurrentcapacityincompactpackage. 3)Complementsthe2SB1197K. | ROHMRohm 罗姆罗姆半导体集团 | |||
MediumPowerTransistor Features ●HighICMax.ICMax.=0.5A ●LowVCE(sat).Optimalforlowvoltageoperation. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
MediumPowerTransistor FEATURES •HighICMax.ICMax=0.5A. •LowVCE(sat).Optimalforlowvoltageoperation. •Complementaryto2SA1577 | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
SiliconEpitaxialPlanarTransistor FEATURES ●ExcellenthFElinearity. ●Powerdissipation:PCM=200mW APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
SOT-323Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●HighICMax.=0.5A ●LowVCE(sat).Optimalforlowvoltageoperation. ●Complementsthe2SA1577 | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
TRANSISTOR(NPN) FEATURES PowerdissipationPCM:200mW(Tamb=25℃) CollectorcurrentICM:500mA Collector-basevoltageV(BR)CBO:40V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司 | |||
SiliconNPNtransistorinaSOT-323PlasticPackage Descriptions SiliconNPNtransistorinaSOT-323PlasticPackage. Features LowCob,complementsthe2SA1577. Applications Mediumpowertransistor. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
TRANSISTOR(NPN) FEATURES ●HighICMax.ICMax=0.5A ●LowVCE(sat).Optimalforlowvoltageoperation. ●Complementsthe2SA1577 | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | |||
SOT-323Plastic-EncapsulateTransistors FEATURES HighICMax.=0.5A LowVCE(sat).Optimalforlowvoltageoperation. Complementsthe2SA1577 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
NPNSiliconEpitaxialTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighIcmax.Icmax=0.5A •LowVCE(SAT).Optimalforlowvoltageoperation. •EpoxymeetsUL94V-0flammabilityrating •Moisu | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
MediumPowerNPNTransistor FEATURE *Surfacemountpackage.(SC-70/SOT-323) *LowsaturationvoltageV *Lowcob.Cob=6.0pF(Typ.)CE(sat)=0.4V(max.)(IC=500mA) *PC=200mW(mountedonceramicsubstrate). *Highsaturationcurrentcapability. APPLICATION *MediumPowerAmplifier. | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | |||
NPNSiliconEpitaxialTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighIcmax.Icmax=0.5A •LowVCE(SAT).Optimalforlowvoltageoperation. •EpoxymeetsUL94V-0flammabilityrating •Moisu | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSiliconEpitaxialTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighIcmax.Icmax=0.5A •LowVCE(SAT).Optimalforlowvoltageoperation. •EpoxymeetsUL94V-0flammabilityrating •Moisu | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
SiliconEpitaxialPlanarTransistor FEATURES ●ExcellenthFElinearity. ●Powerdissipation:PCM=200mW APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
High-frequencyAmplifierTransistor Features ●Lowcollectorcapacitance.(Cob:Typ.1.3pF) ●Lowrbb,highgain,andexcellentnoisecharacteristics. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
NPNPlastic-EncapsulateTransistor FEATURES •LowCollectorCapacitance. •HighGain. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
High-frequencyAmplifierTransistor(25V,50mA,300MHz) High-frequencyAmplifierTransistor (25V,50mA,300MHz) Features 1)Lowcollectorcapacitance.(Cob:Typ.1.3pF) 2)Lowrbb,highgain,andexcellentnoisecharacteristics. | ROHMRohm 罗姆罗姆半导体集团 | |||
TRANSISTOR(NPN) FEATURES ●LowCollectorCapacitance ●HighGain | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | |||
SiliconNPNtransistorinaSOT-323PlasticPackage Descriptions SiliconNPNtransistorinaSOT-323PlasticPackage. Features Hightransitionfrequency,smallcollectoroutputcapacitancecomplementarypair. Applications Audiofrequencyamplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
SOT-323Plastic-EncapsulateTransistors FEATURES LowCollectorCapacitance HighGain | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=25V(Min) ·DCCurrentGain- :hFE=56(Min)@IC=1mA ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforaudioandgeneralpurposeapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SOT-323Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●LowCollectorCapacitance ●HighGain | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
High-frequencyAmplifierTransistor Features 1)Lowcollectorcapacitance.(Cob:Typ.1.3pF) 2)Lowrbb,highgain,andexcellentnoisecharacteristics. | ROHMRohm 罗姆罗姆半导体集团 | |||
NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION4-PINMINIMOLD 文件:175.25 Kbytes Page:9 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
封装/外壳:TO-253-4,TO-253AA 包装:托盘 描述:RF TRANS NPN 12V 7GHZ SOT143 分立半导体产品 晶体管 - 双极(BJT)- 射频 | CEL California Eastern Labs | |||
MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD 文件:323.65 Kbytes Page:10 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
封装/外壳:TO-253-4,TO-253AA 包装:托盘 描述:RF TRANS NPN 10V 9GHZ SOT143 分立半导体产品 晶体管 - 双极(BJT)- 射频 | CEL California Eastern Labs | |||
MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD 文件:329.19 Kbytes Page:10 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
MediumPowerTransistor(32V,0.5A) 文件:66.54 Kbytes Page:4 Pages | ROHMRohm 罗姆罗姆半导体集团 | |||
NPNPlastic-EncapsulateTransistor 文件:993.93 Kbytes Page:2 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
NPNPlastic-EncapsulateTransistor 文件:993.93 Kbytes Page:2 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
NPNPlastic-EncapsulateTransistor 文件:202.31 Kbytes Page:2 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
NPNTRANSISTOR 文件:129.919 Kbytes Page:1 Pages | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司 | |||
NPNSiliconEpitaxialTransistors 文件:285.96 Kbytes Page:3 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSiliconEpitaxialTransistors 文件:285.96 Kbytes Page:3 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSiliconEpitaxialTransistors 文件:285.96 Kbytes Page:3 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSiliconEpitaxialTransistors 文件:285.96 Kbytes Page:3 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
MediumPowerTransistor(32V,0.5A) 文件:66.54 Kbytes Page:4 Pages | ROHMRohm 罗姆罗姆半导体集团 | |||
High-frequencyAmplifierTransistor(25V,50mA,300MHz) 文件:147.11 Kbytes Page:3 Pages | ROHMRohm 罗姆罗姆半导体集团 | |||
High-frequencyAmplifierTransistor(25V,50mA,300MHz) 文件:172.69 Kbytes Page:3 Pages | ROHMRohm 罗姆罗姆半导体集团 | |||
NPNPlastic-EncapsulateTransistor 文件:83.33 Kbytes Page:1 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 |
2SC409产品属性
- 类型
描述
- 型号
2SC409
- 制造商
SHINDENGEN
- 制造商全称
Shindengen Electric Mfg.Co.Ltd
- 功能描述
POWER TRANSISTOR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
24+ |
TO-3 |
10000 |
|||||
NEC |
1922+ |
SOT-143 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
NEC(日电电子) |
24+ |
N/A |
9789 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ROHS |
25+ |
SOT-323 |
32000 |
ROHS全新特价2SC4098T106P即刻询购立享优惠#长期有货 |
|||
ROHM |
21+ |
24000 |
UMT3 (SOT-323) (SC-70) |
||||
ROHM |
2020+ |
UMT3 |
9000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
NEC |
18+ |
SOT-143 |
2600 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
23+ |
SOT-143 |
31000 |
全新原装现货 |
|||
ROHM |
2106+ |
SOT323 |
45000 |
全新原装公司现货
|
|||
NK/南科功率 |
2025+ |
SOT-323 |
986966 |
国产 |
2SC409规格书下载地址
2SC409参数引脚图相关
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- 2SC4053
2SC409数据表相关新闻
2SC4617G-SOT323R-R-TG_UTC代理商
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2023-2-152SC380TM-O
只做原装假一赔十
2020-11-142SC3671-B,T2F(J
产品属性属性值搜索类似 制造商:Toshiba 产品种类:双极晶体管-双极结型晶体管(BJT) 系列:2SC3671 技术:Si 商标:Toshiba 产品类型:BJTs-BipolarTransistors 子类别:Transistors
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深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱:yulin522@126.com0755-8320005015817287769柯先生
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2019-2-15
DdatasheetPDF页码索引
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