NPN Silicon Epitaxial Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High Icmax. Icmax=0.5A • Low VCE(SAT). Optimal for low voltage operation. • Epoxy meets UL 94 V-0 flammability rating • Moisu

NPN Silicon Epitaxial Transistors

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小信号双极型晶体管

NPN Silicon Epitaxial Transistors

文件：285.96 Kbytes Page：3 Pages

丝印代码：T106；Medium Power Transistor (32V, 0.5A)

Medium Power Transistor (32V, 0.8A) Features 1) Very Low VCE(sat). VCE(sat)= 0.1V(Typ.) ̈́IC/ IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K.

Medium Power Transistor

Features ● High ICMax. ICMax. = 0.5A ● Low VCE(sat). Optimal for low voltage operation.

Medium Power Transistor

FEATURES • High ICMax. ICMax=0.5A. • Low VCE(sat). Optimal for low voltage operation. • Complementary to 2SA1577

Medium Power NPN Transistor

FEATURE * Surface mount package. (SC-70/SOT-323) * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Medium Power Amplifier .

Silicon Epitaxial Planar Transistor

FEATURES ● Excellent hFE linearity. ● Power dissipation:PCM=200mW APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor.