NPN SILICON POWER TRANSISTOR

DESCRIPTION The 2SC4001 is designed for use of high-resolution monitor TV applications. This makes it possible to raise the video band of high-resolution monitor TVs to 50 MHz.

isc Silicon NPN Power Transistor

DESCRIPTION • The 2SC4001is designed for uses of high-resolution monitor TV applications.This makes it possible to raise the video band Of high-resolution monitor TVs to 50MHz. FEATURES • Collector–Emitter Sustaining Voltage- : VCBO = 300 V(Min) • Complement to Type 2SA1546

High-Voltage Driver Applications???

High-Voltage Driver Applications Features · High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity.

High-Voltage Driver Applications?

High-Voltage Driver Applications Features · High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity.

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 200 mA Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN Triple Diffused Planar Silicon Transistor

Features ● High breakdown voltage ● Adoption of MBIT process ● Excellent hFE linearity

isc Silicon NPN Power Transistor

DESCRIPTION • High hFE • Low collector-to-emitter saturation voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High switching applications

Silicon NPN transistor in a TO-252 Plastic Package.

Descriptions Silicon NPN transistor in a TO-252 Plastic Package. Features High breakdown voltage, adoption of MBIT process excellent hFE linearity. Applications High voltage driver applications.

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 200 mA Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High hFE ● Low VCE(sat)

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Satisfactory linearity of foward current transfer ratio hFE • Wide area of safe operation (ASO) • High-speed switching • High collector to base voltage VCBO APPLICATIONS • For high breakdown voltage high-speed switching

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Satisfactory linearity of foward current transfer ratio hFE • Wide area of safe operation (ASO) • High-speed switching • High collector to base voltage VCBO APPLICATIONS • For high breakdown voltage high-speed switching

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Satisfactory linearity of foward current transfer ratio hFE • Wide area of safe operation (ASO) • High-speed switching • High collector to base voltage VCBO APPLICATIONS • For high breakdown voltage high-speed switching

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE ● Full-pack package which can be

Driver Applications?

Driver Applications Features · High DC current gain. · Large current capacity and wide ASO. · On-chip Zener diode of 50±8V between collector and base. · Uniformity in collector-to-base breakdown voltage due to accurate impurity diffusion process. · Large inductive load handl

Driver Applications

Driver Applications Features • High DC current gain. • Large current capacity and wide ASO. • On-chip Zener diode of 50±8V between collector and base. • Uniformity in collector-to-base breakdown voltage due to accurate impurity diffusion process. • Large inductive load handling cap

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) • Wide Area of Safe Operation • Complement to Type 2SA1634 APPLICATIONS • Designed for audio and general purpose applications

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) • Wide Area of Safe Operation • Complement to Type 2SA1635 APPLICATIONS • Designed for audio and general purpose applications

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Power Transistor (-80V, -4A)

Chroma Amplifier Transistor (300V, 0.1A)

Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit.

Chroma amplifier transistor

Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit.

High Voltage Amp.Triple Diffused Planar NPN Silicon Transistors

High Voltage Amp.

Chroma Amplifier Transistor

Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit.

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

High Voltage Switchihg Transistor Application : Switching Regulator and General Purpose

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High breakdown voltage :VCBO=900V(Min) ·Wide area of safe operation APPLICATIONS ·For switching regulator and general purpose applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High breakdown voltage : VCBO=900V(Min) ·Wide area of safe operation APPLICATIONS ·For switching regulator and general purpose applications

Silicon NPN Epitaxial Planar Transistor(DC-DC Converter, Emergency Lighting Inverter and General Purpose)

Silicon NPN Epitaxial Planar Transistor Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·High speed switching ·Wide area of safe operation (SOA) APPLICATIONS ·For high breakdown voltage high-speed switching applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·High speed switching ·Wide area of safe operation (SOA) APPLICATIONS ·For high breakdown voltage high-speed switching applications

For high breakdown voltage high-speed switching

For high breakdown voltage high-speed switching ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE ● Full-pack package which can be installed to the heat sink

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·High speed switching ·Wide area of safe operation (SOA) APPLICATIONS ·For high breakdown voltage high-speed switching applications

isc Silicon NPN Power Transistor

DESCRIPTION • High voltage and large current capacity • Ultrahigh-speed switching • Small and slim package permitting • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • Complementary to 2SA1552 APPLICATIONS • Converters , inverters

HIGH-VOLTAGE SWITCHING APPLICATIONS

HIGH-VOLTAGE SWITCHING APPLICATIONS ■ FEATURES * High voltage and large current capacity. * Fast switching time.

High-Voltage Switching Applications

High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • High voltage and large current capacity • Ultrahigh-speed switching • Small and slim package permitting 2SA1552 / 2SC4027-applied sets to be made more compact Applications • Converters, inverters, color TV aud

NPN Epitaxial Planar Silicon Transistor

Features ● High voltage and large current capcity ● Adoption of MBIT process ● Fast switohing time

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC=0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC=0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC=0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC=0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Bipolar Transistor Converters, inverters, color TV audio output

Features • Adoption of FBET, MBIT processes • High voltage and large current capacity • Ultrahigh-speed switching • Small and slim package permitting 2SA1552 / 2SC4027-applied sets to be made more compact Applications • Converters, inverters, color TV audio output

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • High voltage and large current capacity • Ultrahigh-speed switching • Small and slim package permitting 2SA1552 / 2SC4027-applied sets to be made more compact Applications • Converters, inverters, color TV audio output

Bipolar Transistor Converters, inverters, color TV audio output

Features • Adoption of FBET, MBIT processes • High voltage and large current capacity • Ultrahigh-speed switching • Small and slim package permitting 2SA1552 / 2SC4027-applied sets to be made more compact Applications • Converters, inverters, color TV audio output

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • High voltage and large current capacity • Ultrahigh-speed switching • Small and slim package permitting 2SA1552 / 2SC4027-applied sets to be made more compact Applications • Converters, inverters, color TV audio output

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • High voltage and large current capacity • Ultrahigh-speed switching • Small and slim package permitting 2SA1552 / 2SC4027-applied sets to be made more compact Applications • Converters, inverters, color TV audio output

Bipolar Transistor Converters, inverters, color TV audio output

Features • Adoption of FBET, MBIT processes • High voltage and large current capacity • Ultrahigh-speed switching • Small and slim package permitting 2SA1552 / 2SC4027-applied sets to be made more compact Applications • Converters, inverters, color TV audio output

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • High voltage and large current capacity • Ultrahigh-speed switching • Small and slim package permitting 2SA1552 / 2SC4027-applied sets to be made more compact Applications • Converters, inverters, color TV audio output

Bipolar Transistor Converters, inverters, color TV audio output

Features • Adoption of FBET, MBIT processes • High voltage and large current capacity • Ultrahigh-speed switching • Small and slim package permitting 2SA1552 / 2SC4027-applied sets to be made more compact Applications • Converters, inverters, color TV audio output

Bipolar Transistor Converters, inverters, color TV audio output

Features • Adoption of FBET, MBIT processes • High voltage and large current capacity • Ultrahigh-speed switching • Small and slim package permitting 2SA1552 / 2SC4027-applied sets to be made more compact Applications • Converters, inverters, color TV audio output

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • High voltage and large current capacity • Ultrahigh-speed switching • Small and slim package permitting 2SA1552 / 2SC4027-applied sets to be made more compact Applications • Converters, inverters, color TV audio output

Bipolar Transistor Converters, inverters, color TV audio output

Features • Adoption of FBET, MBIT processes • High voltage and large current capacity • Ultrahigh-speed switching • Small and slim package permitting 2SA1552 / 2SC4027-applied sets to be made more compact Applications • Converters, inverters, color TV audio output

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • High voltage and large current capacity • Ultrahigh-speed switching • Small and slim package permitting 2SA1552 / 2SC4027-applied sets to be made more compact Applications • Converters, inverters, color TV audio output

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • High voltage and large current capacity • Ultrahigh-speed switching • Small and slim package permitting 2SA1552 / 2SC4027-applied sets to be made more compact Applications • Converters, inverters, color TV audio output

Bipolar Transistor Converters, inverters, color TV audio output

Features • Adoption of FBET, MBIT processes • High voltage and large current capacity • Ultrahigh-speed switching • Small and slim package permitting 2SA1552 / 2SC4027-applied sets to be made more compact Applications • Converters, inverters, color TV audio output

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • High voltage and large current capacity • Ultrahigh-speed switching • Small and slim package permitting 2SA1552 / 2SC4027-applied sets to be made more compact Applications • Converters, inverters, color TV audio output