isc Silicon NPN Power Transistor

DESCRIPTION • High Switching Speed • High Breakdown Voltage- : V(BR)CBO= 1500V(Min) • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for horizontal deflection output applications.

PNP Power Transistor

Features ◇High speed(tf=100ns type) ◇High breakdown voltage(VCBO=1500V) ◇High reliability(adoption of HVP process) ◇Adoption of MBIT process Applications ◇Designed for horizontal deflection output applications.

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 800V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):5V(Max) @IC= 20A APPLICATIONS · High voltage color display horizontal deflection output

250 Watt NPN Triple Diffused Planar Silicon Transistor

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250 Watt NPN Triple Diffused Planar Silicon Transistor

文件：529.87 Kbytes Page：3 Pages