High-hFE, AF Amp Applications?????????

High hFE, AF Amplifier Applications Features • Adoption of FBET and MBIT processes. • High DC current gain (hFE=800 to 3200). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). • High VEBO (VEBO≥15V). • Small Cob (Cob=2.0pF typ). Applications • Drivers, muting circuits.

MOLD TYPE BIPOLAR TRANSISTORS

MOLD TYPE BIPOLAR TRANSISTORS Rating and Specifications

MOLD TYPE BIPOLAR TRANSISTORS

MOLD TYPE BIPOLAR TRANSISTORS Rating and Specifications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High voltage ,high speed APPLICATIONS • For power switching ,power amplifier, power driver and electronic supply applications

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 15(Min)@ IC=0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

Silicon NPN epitaxial planar type For UHF band low-noise amplification ■ Features • Low noise figure NF • High gain • High forward transfer gain |S21e|2 • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

isc Silicon NPN Power Transistor

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BIPOLAR TRANSISSTORS RATINGS AND SPECIFICATIONS

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MOLD TYPE BIPOLAR TRANSISTORS

Silicon NPN Power Transistors

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High Speed Switching

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BIPOLAR TRANSISSTORS RATINGS AND SPECIFICATIONS

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Silicon NPN triple diffusion planar type

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Power Device - Power Transistors - Swicthing

Silicon NPN triple diffusion planar type

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Power Transistor - Silicon PNP Triple-Diffused Planar Type

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：管件 描述：TRANS NPN 10V 0.08A MINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个