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2SC380晶体管资料
2SC380(A)别名:2SC380(A)三极管、2SC380(A)晶体管、2SC380(A)晶体三极管
2SC380(A)生产厂家:日本东芝公司
2SC380(A)制作材料:Si-NPN
2SC380(A)性质:射频/高频放大 (HF)
2SC380(A)封装形式:直插封装
2SC380(A)极限工作电压:35V
2SC380(A)最大电流允许值:0.03A
2SC380(A)最大工作频率:250MHZ
2SC380(A)引脚数:3
2SC380(A)最大耗散功率:
2SC380(A)放大倍数:
2SC380(A)图片代号:A-20
2SC380(A)vtest:35
2SC380(A)htest:250000000
- 2SC380(A)atest:0.03
2SC380(A)wtest:0
2SC380(A)代换 2SC380(A)用什么型号代替:3DG121C,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2SC380 | Low Level and General Purpose Amplifiers 文件:84.74 Kbytes Page:1 Pages | MICRO-ELECTRONICS | ||
Epitaxial Planar NPN Silicon Transistor Epitaxial Planar NPN Silicon Transistor UHF/VHF Oscillator • Mixer | ROHM 罗姆 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications High transition frequency: fT= 200 MHz (typ.) Low collector output capacitance: Cob= 3.5 pF (typ.) Complementary to 2SA1483 | TOSHIBA 东芝 | |||
NPN EPITAXIAL TYPE (HIGH FREQUENCY , VIDEO AMPLIFIER, HIGH SPEED SWITCHING APPLICATIONS) High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications High transition frequency: fT= 200 MHz (typ.) Low collector output capacitance: Cob= 3.5 pF (typ.) Complementary to 2SA1483 | TOSHIBA 东芝 | |||
High Frequency Amplifier Applications Features High Transition Frequency: fT= 200MHz(typ.) Low Collector Output Capacitance: Cob= 3.5pF(typ.) Complementary to 2SA1483 | KEXIN 科信电子 | |||
High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications High transition frequency: fT= 200 MHz (typ.) Low collector output capacitance: Cob= 3.5 pF (typ.) Complementary to 2SA1483 | TOSHIBA 东芝 | |||
NPN EPITAXIAL TYPE (TV HORIZONTAL DEFLECTION, TV CHROMA OUTPUT APPLICATIONS) TV Horizontal Deflection Output Applications TV Chroma Output Applications High voltage: VCEO= 300 V Low output capacitance: Cob= 3.0 pF (typ.) | TOSHIBA 东芝 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC=20mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 15(Min)@ IC=0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC=20mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC=20mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC=20mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
High-hFE, Low-Frequency General-Purpose Amp Applications????????? High hFE, Low-Frequency General-Purpose Amplifier Applications Features · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO(VEBO≥15V). Applications · Low frequency | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications •Low-frequency general-purpose amplifiers, drivers. Features • Large current capacity (IC=2A). • Adoption of MBIT process. • High DC current gain (hFE=1000 to 2000). • Low collector-to-emi | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers. Features • Large current capacity (IC=2A). • Adoption of MBIT process. • High DC current gain (hFE=1000 to 2000). • Low collector-to-emitter saturation v | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-hFE, Low-Frequency General-Purpose Amp Applications????????? High hFE, Low-Frequency General-Purpose Amplifier Applications Features · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (V CE(sat)≤0.5V). · High VEBO(VEBO≥15V). Applications · Low f | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES • The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating current range. • Dual chips in one package can achieve high performance for differential amplifiers and current mode logic (CML) circuits. | NEC 瑞萨 | |||
SILICON TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES · The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating current range. · Dual chips in one package can | RENESAS 瑞萨 | |||
TO-92 Plastic-Encapsulate Transistors FEATURES High Frequency Amplifier Applications | DGNJDZ 南晶电子 | |||
NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY AMPLIFIER APPLICATIONS) High Frequency Amplifier Applications High power gain: Gpe= 29dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV. IF stage. | TOSHIBA 东芝 | |||
NPN Plastic-Encapsulated Transistor FEATURES High Frequency Amplifier Applications | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
TO-92 Plastic-Encapsulate Transistors FEATURES High Frequency Amplifier Applications | DGNJDZ 南晶电子 | |||
High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications 文件:153.72 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications 文件:153.72 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
Silicon NPN transistor in a TO-126F Plastic Package. 文件:435.27 Kbytes Page:6 Pages | FOSHAN 蓝箭电子 | |||
TRANSISTOR (NPN) 文件:177.33 Kbytes Page:2 Pages | WINNERJOIN 永而佳 | |||
Silicon NPN transistor in a TO-92 Plastic Package 文件:789.77 Kbytes Page:6 Pages | FOSHAN 蓝箭电子 | |||
TRANSISTOR (NPN) 文件:127.14 Kbytes Page:1 Pages | WINNERJOIN 永而佳 | |||
TO-92 Plastic-Encapsulate Transistors 文件:510.97 Kbytes Page:4 Pages | JIANGSU 长电科技 | |||
NPN Plastic-Encapsulated Transistor 文件:83.53 Kbytes Page:1 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 |
2SC380产品属性
- 类型
描述
- 型号
2SC380
- 功能描述
2SC380 TO98 S3B2A
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
NA/ |
5250 |
原装现货,当天可交货,原型号开票 |
|||
ROHM |
2016+ |
SOT23 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
三年内 |
1983 |
只做原装正品 |
|||||
TOSHIBA/东芝 |
22+ |
SOT89 |
100000 |
代理渠道/只做原装/可含税 |
|||
TOSHIBA/东芝 |
25+ |
TO92 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
蓝箭 |
TO92 |
1000000 |
2012 |
||||
Panasonic |
20+ |
SOT-23 |
36800 |
原装优势主营型号-可开原型号增税票 |
|||
TOSHIBA |
24+/25+ |
920 |
原装正品现货库存价优 |
||||
KEXIN |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
CJ/长电 |
24+ |
TO-92 |
9000 |
只做原装,欢迎询价,量大价优 |
2SC380规格书下载地址
2SC380参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
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- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SC3835
- 2SC3834
- 2SC3833
- 2SC3832
- 2SC3831
- 2SC3830
- 2SC383
- 2SC3829
- 2SC3824
- 2SC3822
- 2SC3821
- 2SC3820
- 2SC3816
- 2SC3815
- 2SC3814
- 2SC3813
- 2SC3812
- 2SC3811
- 2SC3810
- 2SC381
- 2SC3809
- 2SC3808
- 2SC3807
- 2SC3806
- 2SC3805
- 2SC3804
- 2SC3803
- 2SC3802K
- 2SC3801
- 2SC3800
- 2SC380(TM,ATM)
- 2SC380(A)
- 2SC38
- 2SC3799A
- 2SC3799
- 2SC3798A
- 2SC3798
- 2SC3797A
- 2SC3797
- 2SC3796A
- 2SC3796
- 2SC3795A
- 2SC3795
- 2SC3794A
- 2SC3794
- 2SC3793
- 2SC3792
- 2SC3791
- 2SC3790
- 2SC379
- 2SC3789
- 2SC3788
- 2SC3787
- 2SC3786
- 2SC3785
- 2SC3784
- 2SC3783
- 2SC3782
- 2SC3781
- 2SC3780
- 2SC3779
2SC380数据表相关新闻
2SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.
2021-3-232SC380TM-O
只做原装假一赔十
2020-11-142SC3671-B,T2F(J
产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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