2SC380晶体管资料

  • 2SC380(A)别名:2SC380(A)三极管、2SC380(A)晶体管、2SC380(A)晶体三极管

  • 2SC380(A)生产厂家:日本东芝公司

  • 2SC380(A)制作材料:Si-NPN

  • 2SC380(A)性质:射频/高频放大 (HF)

  • 2SC380(A)封装形式:直插封装

  • 2SC380(A)极限工作电压:35V

  • 2SC380(A)最大电流允许值:0.03A

  • 2SC380(A)最大工作频率:250MHZ

  • 2SC380(A)引脚数:3

  • 2SC380(A)最大耗散功率

  • 2SC380(A)放大倍数

  • 2SC380(A)图片代号:A-20

  • 2SC380(A)vtest:35

  • 2SC380(A)htest:250000000

  • 2SC380(A)atest:0.03

  • 2SC380(A)wtest:0

  • 2SC380(A)代换 2SC380(A)用什么型号代替:3DG121C,

型号 功能描述 生产厂家&企业 LOGO 操作
2SC380

Low Level and General Purpose Amplifiers

文件:84.74 Kbytes Page:1 Pages

MICRO-ELECTRONICS

Epitaxial Planar NPN Silicon Transistor

Epitaxial Planar NPN Silicon Transistor UHF/VHF Oscillator • Mixer

ROHM

罗姆

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications

High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications High transition frequency: fT= 200 MHz (typ.) Low collector output capacitance: Cob= 3.5 pF (typ.) Complementary to 2SA1483

TOSHIBA

东芝

NPN EPITAXIAL TYPE (HIGH FREQUENCY , VIDEO AMPLIFIER, HIGH SPEED SWITCHING APPLICATIONS)

High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications High transition frequency: fT= 200 MHz (typ.) Low collector output capacitance: Cob= 3.5 pF (typ.) Complementary to 2SA1483

TOSHIBA

东芝

High Frequency Amplifier Applications

Features High Transition Frequency: fT= 200MHz(typ.) Low Collector Output Capacitance: Cob= 3.5pF(typ.) Complementary to 2SA1483

KEXIN

科信电子

High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications

High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications High transition frequency: fT= 200 MHz (typ.) Low collector output capacitance: Cob= 3.5 pF (typ.) Complementary to 2SA1483

TOSHIBA

东芝

NPN EPITAXIAL TYPE (TV HORIZONTAL DEFLECTION, TV CHROMA OUTPUT APPLICATIONS)

TV Horizontal Deflection Output Applications TV Chroma Output Applications High voltage: VCEO= 300 V Low output capacitance: Cob= 3.0 pF (typ.)

TOSHIBA

东芝

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC=20mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 15(Min)@ IC=0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC=20mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC=20mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC=20mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

High-hFE, Low-Frequency General-Purpose Amp Applications?????????

High hFE, Low-Frequency General-Purpose Amplifier Applications Features · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO(VEBO≥15V). Applications · Low frequency

SANYOSanyo Semicon Device

三洋三洋电机株式会社

NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications

25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications •Low-frequency general-purpose amplifiers, drivers. Features • Large current capacity (IC=2A). • Adoption of MBIT process. • High DC current gain (hFE=1000 to 2000). • Low collector-to-emi

SANYOSanyo Semicon Device

三洋三洋电机株式会社

NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications

25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers. Features • Large current capacity (IC=2A). • Adoption of MBIT process. • High DC current gain (hFE=1000 to 2000). • Low collector-to-emitter saturation v

SANYOSanyo Semicon Device

三洋三洋电机株式会社

High-hFE, Low-Frequency General-Purpose Amp Applications?????????

High hFE, Low-Frequency General-Purpose Amplifier Applications Features · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (V CE(sat)≤0.5V). · High VEBO(VEBO≥15V). Applications · Low f

SANYOSanyo Semicon Device

三洋三洋电机株式会社

NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE

FEATURES • The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating current range. • Dual chips in one package can achieve high performance for differential amplifiers and current mode logic (CML) circuits.

NEC

瑞萨

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES · The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating current range. · Dual chips in one package can

RENESAS

瑞萨

TO-92 Plastic-Encapsulate Transistors

FEATURES High Frequency Amplifier Applications

DGNJDZ

南晶电子

NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY AMPLIFIER APPLICATIONS)

High Frequency Amplifier Applications High power gain: Gpe= 29dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV. IF stage.

TOSHIBA

东芝

NPN Plastic-Encapsulated Transistor

FEATURES High Frequency Amplifier Applications

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

TO-92 Plastic-Encapsulate Transistors

FEATURES High Frequency Amplifier Applications

DGNJDZ

南晶电子

High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications

文件:153.72 Kbytes Page:4 Pages

TOSHIBA

东芝

High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications

文件:153.72 Kbytes Page:4 Pages

TOSHIBA

东芝

Silicon NPN transistor in a TO-126F Plastic Package.

文件:435.27 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

TRANSISTOR (NPN)

文件:177.33 Kbytes Page:2 Pages

WINNERJOIN

永而佳

Silicon NPN transistor in a TO-92 Plastic Package

文件:789.77 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

TRANSISTOR (NPN)

文件:127.14 Kbytes Page:1 Pages

WINNERJOIN

永而佳

TO-92 Plastic-Encapsulate Transistors

文件:510.97 Kbytes Page:4 Pages

JIANGSU

长电科技

NPN Plastic-Encapsulated Transistor

文件:83.53 Kbytes Page:1 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SC380产品属性

  • 类型

    描述

  • 型号

    2SC380

  • 功能描述

    2SC380 TO98 S3B2A

更新时间:2025-8-8 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
24+
NA/
5250
原装现货,当天可交货,原型号开票
ROHM
2016+
SOT23
3000
只做原装,假一罚十,公司可开17%增值税发票!
三年内
1983
只做原装正品
TOSHIBA/东芝
22+
SOT89
100000
代理渠道/只做原装/可含税
TOSHIBA/东芝
25+
TO92
54648
百分百原装现货 实单必成 欢迎询价
蓝箭
TO92
1000000
2012
Panasonic
20+
SOT-23
36800
原装优势主营型号-可开原型号增税票
TOSHIBA
24+/25+
920
原装正品现货库存价优
KEXIN
23+
NA
19960
只做进口原装,终端工厂免费送样
CJ/长电
24+
TO-92
9000
只做原装,欢迎询价,量大价优

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