Low Level and General Purpose Amplifiers

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小信号晶体管

Epitaxial Planar NPN Silicon Transistor

Epitaxial Planar NPN Silicon Transistor UHF/VHF Oscillator • Mixer

NPN EPITAXIAL TYPE (HIGH FREQUENCY , VIDEO AMPLIFIER, HIGH SPEED SWITCHING APPLICATIONS)

High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications High transition frequency: fT= 200 MHz (typ.) Low collector output capacitance: Cob= 3.5 pF (typ.) Complementary to 2SA1483

High Frequency Amplifier Applications

Features High Transition Frequency: fT= 200MHz(typ.) Low Collector Output Capacitance: Cob= 3.5pF(typ.) Complementary to 2SA1483

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications

High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications High transition frequency: fT= 200 MHz (typ.) Low collector output capacitance: Cob= 3.5 pF (typ.) Complementary to 2SA1483

High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications

High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications High transition frequency: fT= 200 MHz (typ.) Low collector output capacitance: Cob= 3.5 pF (typ.) Complementary to 2SA1483

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC=20mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 15(Min)@ IC=0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC=20mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

NPN EPITAXIAL TYPE (TV HORIZONTAL DEFLECTION, TV CHROMA OUTPUT APPLICATIONS)

TV Horizontal Deflection Output Applications TV Chroma Output Applications High voltage: VCEO= 300 V Low output capacitance: Cob= 3.0 pF (typ.)

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC=20mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC=20mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

High-hFE, Low-Frequency General-Purpose Amp Applications?????????

High hFE, Low-Frequency General-Purpose Amplifier Applications Features · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO(VEBO≥15V). Applications · Low frequency

NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications

25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications •Low-frequency general-purpose amplifiers, drivers. Features • Large current capacity (IC=2A). • Adoption of MBIT process. • High DC current gain (hFE=1000 to 2000). • Low collector-to-emi

NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications

25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers. Features • Large current capacity (IC=2A). • Adoption of MBIT process. • High DC current gain (hFE=1000 to 2000). • Low collector-to-emitter saturation v

High-hFE, Low-Frequency General-Purpose Amp Applications?????????

High hFE, Low-Frequency General-Purpose Amplifier Applications Features · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (V CE(sat)≤0.5V). · High VEBO(VEBO≥15V). Applications · Low f

NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE

FEATURES • The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating current range. • Dual chips in one package can achieve high performance for differential amplifiers and current mode logic (CML) circuits.

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES · The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating current range. · Dual chips in one package can

丝印代码：C380TM；TO-92 Plastic-Encapsulate Transistors

FEATURES High Frequency Amplifier Applications

NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY AMPLIFIER APPLICATIONS)

High Frequency Amplifier Applications High power gain: Gpe= 29dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV. IF stage.

NPN Plastic-Encapsulated Transistor

FEATURES High Frequency Amplifier Applications

丝印代码：C380TM；TO-92 Plastic-Encapsulate Transistors

FEATURES High Frequency Amplifier Applications

High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications

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High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications

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丝印代码：C3805；TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

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Transistor Silicon NPN Epitaxial Type (PCT process) TV Horizontal Deflection Output Applications TV Chroma Output Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

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NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications

Silicon NPN transistor in a TO-126F Plastic Package.

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TRANSISTOR (NPN)

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Silicon NPN transistor in a TO-92 Plastic Package

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TRANSISTOR (NPN)

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TO-92 Plastic-Encapsulate Transistors

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NPN Plastic-Encapsulated Transistor

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NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor High frequency amplifier application for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups R, O, and Y, according to its DC current gain.