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2SC37晶体管资料
2SC37别名:2SC37三极管、2SC37晶体管、2SC37晶体三极管
2SC37生产厂家:日本日电公司
2SC37制作材料:Si-NPN
2SC37性质:射频/高频放大 (HF)_TR
2SC37封装形式:直插封装
2SC37极限工作电压:40V
2SC37最大电流允许值:0.1A
2SC37最大工作频率:200MHZ
2SC37引脚数:3
2SC37最大耗散功率:0.2W
2SC37放大倍数:
2SC37图片代号:D-9
2SC37vtest:40
2SC37htest:200000000
- 2SC37atest:0.1
2SC37wtest:0.2
2SC37代换 2SC37用什么型号代替:BC337,BC377,BC635,BC737,BFW16,BFW17,BFX55,3DG130C,
2SC37价格
参考价格:¥1.6276
型号:2SC370400L 品牌:Panasonic 备注:这里有2SC37多少钱,2025年最近7天走势,今日出价,今日竞价,2SC37批发/采购报价,2SC37行情走势销售排行榜,2SC37报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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POWERTRANSISTOR POWERTRANSISTORS | SHINDENGENShindengen Electric Mfg.Co.Ltd 日本新电元工业株式会社 | |||
SiliconNPNepitaxialplanertype(ForUHFbandlow-noiseamplification) SiliconNPNepitaxialplanartype ForUHFbandlow-noiseamplification ■Features •LownoisefigureNF •Highforwardtransfergain|S21e|2 •HightransitionfrequencyfT •Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagaz | PanasonicPanasonic Semiconductor 松下松下电器 | |||
PrinterDriverApplications PrinterDriverApplications Features ·HighDCcurrentgain. ·LargecurrentcapacityuandwideASO. ·ContainsaZenerdiodeacrosscollectorandbase. Applications ·SwitchingofLload(motordrivers,printerdrivers,relaydrivers). | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
SiliconNPNepitaxialplanertype(ForUHFamplification) SiliconNPNepitaxialplanartype ForUHFamplification ■Features •Possiblewiththesmallcurrentandlowvoltage •HightransitionfrequencyfT •Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking | PanasonicPanasonic Semiconductor 松下松下电器 | |||
SiliconNPNEpitaxialPlanartype Features ●Possiblewiththesmallcurrentandlowvoltage ●HightransitionfrequencyfT ●Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
Low-FrequencyDriverApplications Low-FrequencyDriverApplications Features •AdoptionofFBETprocess. •AFamp,AFpoweramp. •Highbreakdownvoltage:VCEO>80V | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
NPNEPITAXIALTYPE(HIGHCURRENTSWITCHINGAPPLICATIONS) HIGHCURRENTSWITCHINGAPPLICATIONS •LowCollectorSaturationVoltage:VCE(sat)=0.4V(Max.) •High-SpeedSwitchingTime:tstg=1.0μs(Typ.) •Complementaryto2SA1451A | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
iscSiliconNPNPowerTransistor DESCRIPTION ·LowCollectorSaturationVoltage- :VCE(sat)=0.4V(Max)@IC=6A ·GoodLinearityofhFE ·HighSwitchingSpeed ·ComplementtoType2SA1451 APPLICATIONS ·Designedforhighcurrentswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HIGHCURRENTSWITCHINGAPPLICATIONS High-CurrentSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.4V(max) •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1451A | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNTransistors Features •WithTO-220Fapackage •Complementtotype2SA1452 •Hihgcurrentswitchingapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220Fapackage •Complementtotype2SA1452 •Lowcollectorsaturationvoltage •Highspeedswitchingtime APPLICATIONS •Highcurrentswitchingapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220Fapackage •Complementtotype2SA1452 •Lowcollectorsaturationvoltage •Highspeedswitchingtime APPLICATIONS •Highcurrentswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
High-CurrentSwitchingApplications High-CurrentSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.4V(max) •High-speedswitching:tstg=1.0µs(typ.) •Complementaryto2SA1452A | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
HIGHCURRENTSWITCHINGAPPLICATIONS High-PowerSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.4V(max) •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1452A | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •LowCollectorSaturationVoltage- :VCE(sat)=0.4V(Max)@IC=6A •FastSwitchingSpeed •ComplementtoType2SA1452A •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designedforhighcurrentswitchin | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
High-PowerSwitchingApplications High-PowerSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.4V(max) •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1452A | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
High-CurrentSwitchingApplications High-CurrentSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.4V(max) •High-speedswitching:tstg=1.0µs(typ.) •Complementaryto2SA1452A | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
High-PowerSwitchingApplications High-PowerSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.4V(max) •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1452A | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
HighSwitchingSpeed DESCRIPTION •HighSwitchingSpeed •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=400V(Min) | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
2SC3714 SwitchingPowerTransistor20A(NPN) | SHINDENGENShindengen Electric Mfg.Co.Ltd 日本新电元工业株式会社 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=800V(Min) •HighSwitchingSpeed •WideAreaofSafeOperation APPLICATIONS •Designedforhighspeedswitchingandhorizontaldeflectionoutputapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION ·HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=800V(Min) ·HighSwitchingSpeed ·WideAreaofSafeOperation APPLICATIONS ·Designedforhighspeedswitchingandhorizontaldeflectionoutputapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=800V(Min) ·HighSwitchingSpeed ·WideAreaofSafeOperation APPLICATIONS ·Designedforhighspeedswitchingandhorizontaldeflectionoutputapplications. | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeedswitching ·Highreliability APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeedswitching ·Highreliability APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeedswitching ·Highreliability APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
MOLDTYPEBIPOLARTRANSISTORS MOLDTYPEBIPOLARTRANSISTORS RatingandSpecifications | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Highvoltage,highspeedswitching ·Highreliability APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Highvoltage,highspeedswitching ·Highreliability APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Highvoltage,highspeedswitching ·Highreliability APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SmallSignalTransistor Features ●HighhFE=150to800. ●Highcollectorcurrent(Ic=2A). ●HighcollectordissipationPc=500mW. ●LowVCE(sat):VCE(sat)=0.17Vtyp(@Ic=1A,IB=50mA). ●Smallpackageformounting. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION ·HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=800V(Min) ·WideAreaofSafeOperation APPLICATIONS ·DesignedforTVhorizontaldeflectionoutputapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNSILICONTRANSISTOR DESCRIPTION The2SC3731isdesignedforgeneralpurposeamplifierandhighspeedswitchingapplications. FEATURES ●HighFrequencyCurrentGain. ●HighSpeedSwitching. ●SmallOutputCapacitance. ●ComplementarytotheNEC2SA1458PNPtransistor. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
NPNSILICONTRANSISTOR DESCRIPTION The2SC3732isdesignedforgeneralpurposeamplifierandhighspeedswitchingapplications. FEATURES ●HighFrequencyCurrentGain. ●HighSpeedSwitching. ●SmallOutputCapacitance. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
NPNSILICONTRANSISTOR DESCRIPTION The2SC3733isdesignedforpoweramplifierandhighspeedswitchingapplications. FEATURES ●Highspeed,highvoltageswitching. ●LowCollectorSaturationVoltage. ●ComplementarytotheNEC2SA1460PNPtransistor. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
HIGHFREQUENCYAMPLIFIERNPNSILICONEPITAXIALTRANSISTORPOWERMINIMOLD FEATURES ●HighSpeed:tstg | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
NPNSiliconEpitaxia Features Highspeed:tstg | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
HIGHSPEEDSWITCHINGNPNSILICONEPITAXIALTRANSISTORPOWERMINIMOLD FEATURE ●HighSpeed:ton | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
SILICONTRANSISTOR HIGHSPEEDSWITCHING NPNSILICONEPITAXIALTRANSISTOR FEATURES •High-speedswitching •Lowcollectorsaturationvoltage •Highgainbandwidthproduct •Lowcollectorcapacitance •Canbeusedcomplementarytothe2SA1462. •Package:3-pinMiniMold(SC-59) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
HIGHSPEEDSWITCHINGNPNSILICONEPITAXIALTRANSISTORPOWERMINIMOLD FEATURE ●HighSpeed:ton | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
NPNSiliconEpitaxia Features Highspeed,highvoltageswitching. Lowcollectorsaturationvoltage | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
HIGHSPEEDSWITCHINGNPNSILICONEPITAXIALTRANSISTORPOWERMINIMOLD DESCRIPTION The2SC3736isdesignedforpoweramplifierandhighspeedswitchingapplications. FEATURES ●Highspeed,highvoltageswitching. ●LowCollectorSaturationVoltage. ●ComplementarytotheNEC2SA1460PNPtransistor. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
SILICONTRANSISTOR HIGHSPEEDSWITCHING NPNSILICONEPITAXIALTRANSISTOR POWERMINIMOLD DESCRIPTION The2SC3736isdesignedforpoweramplifierandhighspeed switchingapplications. FEATURES •Highspeed,highvoltageswitching •Lowcollectorsaturationvoltage •Complementarytothe2SA1460PNPtran | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNTransistors ■Features ●HighSpeed,HighVoltageSwitching ●LowCollectorSaturationVoltage ●Complementaryto2SA1463-HF ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
NPNTransistors ■Features ●HighSpeed,HighVoltageSwitching ●LowCollectorSaturationVoltage ●Complementaryto2SA1463-HF ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
NPNTransistors ■Features ●HighSpeed,HighVoltageSwitching ●LowCollectorSaturationVoltage ●Complementaryto2SA1463-HF ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION ·HighCollector-BaseBreakdownVoltage-:V(BR)CBO=800V(Min) ·HighSwitchingSpeed ·WideAreaofSafeOperation APPLICATIONS ·Designedforhighspeedswitchingandhorizontaldeflectionoutputapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
OldCompanyNameinCatalogsandOtherDocuments FEATURES ●HighGainBandwidthProduct:fT=200MHzMIN. ●Complementaryto2SA1464 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.5A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司 | |||
NPNSiliconEpitaxia Features ●Highgainbandwidthproduct:fT=200MHz. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
HIGHFREQUENCYAMPLIFIERANDSWITCHINGNPNSILICONEPITAXIALTRANSISTORPOWERMINIMOLD FEATURES ●HighGainBandwidthProduct:fT=200MHzMIN. ●Complementaryto2SA1464 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
NPNTransistors ■Features ●HighGainBandwidthProduct:fT=200MHz(min) ●Complementaryto2SA1464-HF ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
NPNTransistors ■Features ●HighGainBandwidthProduct:fT=200MHz(min) ●Complementaryto2SA1464-HF ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
NPNTransistors ■Features ●HighGainBandwidthProduct:fT=200MHz(min) ●Complementaryto2SA1464-HF ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
NPNTransistors ■Features ●HighGainBandwidthProduct:fT=200MHz(min) ●Complementaryto2SA1464-HF ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
HIGHFREQUENCYAMPLIFIERANDSWITCHINGNPNSILICONEPITAXIALTRANSISTORMINIMOLD FEATURES ●HighGainBandwidthProduct:fT=200MHzMIN. ●Complementaryto2SA1464 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SILICONTRANSISTOR AUDIOFREQUENCYAMPLIFIER SILICONEPITAXIALTRANSISTOR MINIMOLD | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SiliconNPNtriplediffusionplanartype(Forhighbreakdownvoltagehigh-speedswitching) SiliconNPNtriplediffusionplanartype Forhighbreakdownvoltagehigh-speedswitching ■Features •High-speedswitching •Widesafeoperationareaandhighbreakdownvoltage •SatisfactorylinearityofforwardcurrenttransferratiohFE •Full-packpackagewhichcanbeinstalledtothehe | PanasonicPanasonic Semiconductor 松下松下电器 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •Collector-EmiiterBreakdownVoltage-:V(BR)CEO=800V(Min.) •WideAreaofSafeOperation •HighSpeedSwitching APPLICATIONS •Designedforhighspeedswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Fpackage ·Complementtotype2SA1469 ·Lowsaturationvoltage ·ExcellentcurrentdependenceofhFE ·Shortswitchingtime APPLICATIONS ·Variousinductanceoflampdriversforelectronicequipment ·Inverters,converters ·Switchingregulator,d | SAVANTIC Savantic, Inc. |
2SC37产品属性
- 类型
描述
- 型号
2SC37
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-3940V .2A .2W
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
2024 |
SOT-23 |
58209 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
NEC |
24+ |
SOT-23 |
9200 |
新进库存/原装 |
|||
NEC |
25+ |
SOT-23 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
NEC |
22+ |
SOT-23 |
25000 |
只有原装原装,支持BOM配单 |
|||
POWER |
23+ |
23 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
NEC |
2023+ |
SOT23 |
58000 |
进口原装,现货热卖 |
|||
NEC |
25+23+ |
Sot-23 |
33821 |
绝对原装正品全新进口深圳现货 |
|||
NEC |
2019+ |
SOT23 |
3333 |
原厂渠道 可含税出货 |
|||
RENESAS/瑞萨 |
24+ |
SOT-23 |
17500 |
郑重承诺只做原装进口现货 |
|||
NEC |
23+ |
SOT-23 |
24190 |
原装正品代理渠道价格优势 |
2SC37规格书下载地址
2SC37参数引脚图相关
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- 2SC371(G,T)
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- 2SC370(G,T)
- 2SC370
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- 2SC3678
- 2SC3677
- 2SC3676
- 2SC3675
- 2SC3673
- 2SC3672
- 2SC3671
- 2SC3670
2SC37数据表相关新闻
2SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取.QQ:1755232575/QQ:1157611585,微信号:87680558.
2021-3-232SC380TM-O
只做原装假一赔十
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产品属性属性值搜索类似 制造商:Toshiba 产品种类:双极晶体管-双极结型晶体管(BJT) 系列:2SC3671 技术:Si 商标:Toshiba 产品类型:BJTs-BipolarTransistors 子类别:Transistors
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DdatasheetPDF页码索引
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