2SC37晶体管资料

  • 2SC37别名:2SC37三极管、2SC37晶体管、2SC37晶体三极管

  • 2SC37生产厂家:日本日电公司

  • 2SC37制作材料:Si-NPN

  • 2SC37性质:射频/高频放大 (HF)_TR

  • 2SC37封装形式:直插封装

  • 2SC37极限工作电压:40V

  • 2SC37最大电流允许值:0.1A

  • 2SC37最大工作频率:200MHZ

  • 2SC37引脚数:3

  • 2SC37最大耗散功率:0.2W

  • 2SC37放大倍数

  • 2SC37图片代号:D-9

  • 2SC37vtest:40

  • 2SC37htest:200000000

  • 2SC37atest:0.1

  • 2SC37wtest:0.2

  • 2SC37代换 2SC37用什么型号代替:BC337,BC377,BC635,BC737,BFW16,BFW17,BFX55,3DG130C,

2SC37价格

参考价格:¥1.6276

型号:2SC370400L 品牌:Panasonic 备注:这里有2SC37多少钱,2025年最近7天走势,今日出价,今日竞价,2SC37批发/采购报价,2SC37行情走势销售排行榜,2SC37报价。
型号 功能描述 生产厂家&企业 LOGO 操作

POWERTRANSISTOR

POWERTRANSISTORS

SHINDENGENShindengen Electric Mfg.Co.Ltd

日本新电元工业株式会社

SHINDENGEN

SiliconNPNepitaxialplanertype(ForUHFbandlow-noiseamplification)

SiliconNPNepitaxialplanartype ForUHFbandlow-noiseamplification ■Features •LownoisefigureNF •Highforwardtransfergain|S21e|2 •HightransitionfrequencyfT •Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagaz

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

PrinterDriverApplications

PrinterDriverApplications Features ·HighDCcurrentgain. ·LargecurrentcapacityuandwideASO. ·ContainsaZenerdiodeacrosscollectorandbase. Applications ·SwitchingofLload(motordrivers,printerdrivers,relaydrivers).

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

SiliconNPNepitaxialplanertype(ForUHFamplification)

SiliconNPNepitaxialplanartype ForUHFamplification ■Features •Possiblewiththesmallcurrentandlowvoltage •HightransitionfrequencyfT •Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

SiliconNPNEpitaxialPlanartype

Features ●Possiblewiththesmallcurrentandlowvoltage ●HightransitionfrequencyfT ●Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

Low-FrequencyDriverApplications

Low-FrequencyDriverApplications Features •AdoptionofFBETprocess. •AFamp,AFpoweramp. •Highbreakdownvoltage:VCEO>80V

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

NPNEPITAXIALTYPE(HIGHCURRENTSWITCHINGAPPLICATIONS)

HIGHCURRENTSWITCHINGAPPLICATIONS ​​​​​​​ •LowCollectorSaturationVoltage:VCE(sat)=0.4V(Max.) •High-SpeedSwitchingTime:tstg=1.0μs(Typ.) •Complementaryto2SA1451A

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

iscSiliconNPNPowerTransistor

DESCRIPTION ·LowCollectorSaturationVoltage- :VCE(sat)=0.4V(Max)@IC=6A ·GoodLinearityofhFE ·HighSwitchingSpeed ·ComplementtoType2SA1451 APPLICATIONS ·Designedforhighcurrentswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HIGHCURRENTSWITCHINGAPPLICATIONS

High-CurrentSwitchingApplications ​​​​​​​ •Lowcollectorsaturationvoltage:VCE(sat)=0.4V(max) •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1451A

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNTransistors

Features •WithTO-220Fapackage •Complementtotype2SA1452 •Hihgcurrentswitchingapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fapackage •Complementtotype2SA1452 •Lowcollectorsaturationvoltage •Highspeedswitchingtime APPLICATIONS •Highcurrentswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fapackage •Complementtotype2SA1452 •Lowcollectorsaturationvoltage •Highspeedswitchingtime APPLICATIONS •Highcurrentswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

High-CurrentSwitchingApplications

High-CurrentSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.4V(max) •High-speedswitching:tstg=1.0µs(typ.) •Complementaryto2SA1452A

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

HIGHCURRENTSWITCHINGAPPLICATIONS

High-PowerSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.4V(max) •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1452A

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

iscSiliconNPNPowerTransistor

DESCRIPTION •LowCollectorSaturationVoltage- :VCE(sat)=0.4V(Max)@IC=6A •FastSwitchingSpeed •ComplementtoType2SA1452A •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designedforhighcurrentswitchin

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

High-PowerSwitchingApplications

High-PowerSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.4V(max) •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1452A

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

High-CurrentSwitchingApplications

High-CurrentSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.4V(max) •High-speedswitching:tstg=1.0µs(typ.) •Complementaryto2SA1452A

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

High-PowerSwitchingApplications

High-PowerSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.4V(max) •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1452A

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

HighSwitchingSpeed

DESCRIPTION •HighSwitchingSpeed •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=400V(Min)

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SC3714

SwitchingPowerTransistor20A(NPN)

SHINDENGENShindengen Electric Mfg.Co.Ltd

日本新电元工业株式会社

SHINDENGEN

iscSiliconNPNPowerTransistor

DESCRIPTION •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=800V(Min) •HighSwitchingSpeed •WideAreaofSafeOperation APPLICATIONS •Designedforhighspeedswitchingandhorizontaldeflectionoutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=800V(Min) ·HighSwitchingSpeed ·WideAreaofSafeOperation APPLICATIONS ·Designedforhighspeedswitchingandhorizontaldeflectionoutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION ·HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=800V(Min) ·HighSwitchingSpeed ·WideAreaofSafeOperation APPLICATIONS ·Designedforhighspeedswitchingandhorizontaldeflectionoutputapplications.

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeedswitching ·Highreliability APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeedswitching ·Highreliability APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeedswitching ·Highreliability APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

MOLDTYPEBIPOLARTRANSISTORS

MOLDTYPEBIPOLARTRANSISTORS RatingandSpecifications

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·Highvoltage,highspeedswitching ·Highreliability APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·Highvoltage,highspeedswitching ·Highreliability APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·Highvoltage,highspeedswitching ·Highreliability APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SmallSignalTransistor

Features ●HighhFE=150to800. ●Highcollectorcurrent(Ic=2A). ●HighcollectordissipationPc=500mW. ●LowVCE(sat):VCE(sat)=0.17Vtyp(@Ic=1A,IB=50mA). ●Smallpackageformounting.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=800V(Min) ·WideAreaofSafeOperation APPLICATIONS ·DesignedforTVhorizontaldeflectionoutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNSILICONTRANSISTOR

DESCRIPTION The2SC3731isdesignedforgeneralpurposeamplifierandhighspeedswitchingapplications. FEATURES ●HighFrequencyCurrentGain. ●HighSpeedSwitching. ●SmallOutputCapacitance. ●ComplementarytotheNEC2SA1458PNPtransistor.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNSILICONTRANSISTOR

DESCRIPTION The2SC3732isdesignedforgeneralpurposeamplifierandhighspeedswitchingapplications. FEATURES ●HighFrequencyCurrentGain. ●HighSpeedSwitching. ●SmallOutputCapacitance.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNSILICONTRANSISTOR

DESCRIPTION The2SC3733isdesignedforpoweramplifierandhighspeedswitchingapplications. FEATURES ●Highspeed,highvoltageswitching. ●LowCollectorSaturationVoltage. ●ComplementarytotheNEC2SA1460PNPtransistor.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

HIGHFREQUENCYAMPLIFIERNPNSILICONEPITAXIALTRANSISTORPOWERMINIMOLD

FEATURES ●HighSpeed:tstg

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNSiliconEpitaxia

Features Highspeed:tstg

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

HIGHSPEEDSWITCHINGNPNSILICONEPITAXIALTRANSISTORPOWERMINIMOLD

FEATURE ●HighSpeed:ton

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

SILICONTRANSISTOR

HIGHSPEEDSWITCHING NPNSILICONEPITAXIALTRANSISTOR FEATURES •High-speedswitching •Lowcollectorsaturationvoltage •Highgainbandwidthproduct •Lowcollectorcapacitance •Canbeusedcomplementarytothe2SA1462. •Package:3-pinMiniMold(SC-59)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

HIGHSPEEDSWITCHINGNPNSILICONEPITAXIALTRANSISTORPOWERMINIMOLD

FEATURE ●HighSpeed:ton

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNSiliconEpitaxia

Features Highspeed,highvoltageswitching. Lowcollectorsaturationvoltage

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

HIGHSPEEDSWITCHINGNPNSILICONEPITAXIALTRANSISTORPOWERMINIMOLD

DESCRIPTION The2SC3736isdesignedforpoweramplifierandhighspeedswitchingapplications. FEATURES ●Highspeed,highvoltageswitching. ●LowCollectorSaturationVoltage. ●ComplementarytotheNEC2SA1460PNPtransistor.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

SILICONTRANSISTOR

HIGHSPEEDSWITCHING NPNSILICONEPITAXIALTRANSISTOR POWERMINIMOLD DESCRIPTION The2SC3736isdesignedforpoweramplifierandhighspeed switchingapplications. FEATURES •Highspeed,highvoltageswitching •Lowcollectorsaturationvoltage •Complementarytothe2SA1460PNPtran

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNTransistors

■Features ●HighSpeed,HighVoltageSwitching ●LowCollectorSaturationVoltage ●Complementaryto2SA1463-HF ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

NPNTransistors

■Features ●HighSpeed,HighVoltageSwitching ●LowCollectorSaturationVoltage ●Complementaryto2SA1463-HF ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

NPNTransistors

■Features ●HighSpeed,HighVoltageSwitching ●LowCollectorSaturationVoltage ●Complementaryto2SA1463-HF ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighCollector-BaseBreakdownVoltage-:V(BR)CBO=800V(Min) ·HighSwitchingSpeed ·WideAreaofSafeOperation APPLICATIONS ·Designedforhighspeedswitchingandhorizontaldeflectionoutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

OldCompanyNameinCatalogsandOtherDocuments

FEATURES ●HighGainBandwidthProduct:fT=200MHzMIN. ●Complementaryto2SA1464

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.5A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳深圳市永而佳实业有限公司

WINNERJOIN

NPNSiliconEpitaxia

Features ●Highgainbandwidthproduct:fT=200MHz.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

HIGHFREQUENCYAMPLIFIERANDSWITCHINGNPNSILICONEPITAXIALTRANSISTORPOWERMINIMOLD

FEATURES ●HighGainBandwidthProduct:fT=200MHzMIN. ●Complementaryto2SA1464

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNTransistors

■Features ●HighGainBandwidthProduct:fT=200MHz(min) ●Complementaryto2SA1464-HF ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

NPNTransistors

■Features ●HighGainBandwidthProduct:fT=200MHz(min) ●Complementaryto2SA1464-HF ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

NPNTransistors

■Features ●HighGainBandwidthProduct:fT=200MHz(min) ●Complementaryto2SA1464-HF ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

NPNTransistors

■Features ●HighGainBandwidthProduct:fT=200MHz(min) ●Complementaryto2SA1464-HF ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

HIGHFREQUENCYAMPLIFIERANDSWITCHINGNPNSILICONEPITAXIALTRANSISTORMINIMOLD

FEATURES ●HighGainBandwidthProduct:fT=200MHzMIN. ●Complementaryto2SA1464

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SILICONTRANSISTOR

AUDIOFREQUENCYAMPLIFIER SILICONEPITAXIALTRANSISTOR MINIMOLD

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNtriplediffusionplanartype(Forhighbreakdownvoltagehigh-speedswitching)

SiliconNPNtriplediffusionplanartype Forhighbreakdownvoltagehigh-speedswitching ■Features •High-speedswitching •Widesafeoperationareaandhighbreakdownvoltage •SatisfactorylinearityofforwardcurrenttransferratiohFE •Full-packpackagewhichcanbeinstalledtothehe

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmiiterBreakdownVoltage-:V(BR)CEO=800V(Min.) •WideAreaofSafeOperation •HighSpeedSwitching APPLICATIONS •Designedforhighspeedswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fpackage ·Complementtotype2SA1469 ·Lowsaturationvoltage ·ExcellentcurrentdependenceofhFE ·Shortswitchingtime APPLICATIONS ·Variousinductanceoflampdriversforelectronicequipment ·Inverters,converters ·Switchingregulator,d

SAVANTIC

Savantic, Inc.

SAVANTIC

2SC37产品属性

  • 类型

    描述

  • 型号

    2SC37

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR TO-3940V .2A .2W

更新时间:2025-7-30 16:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
2024
SOT-23
58209
16余年资质 绝对原盒原盘代理渠道 更多数量
NEC
24+
SOT-23
9200
新进库存/原装
NEC
25+
SOT-23
54558
百分百原装现货 实单必成 欢迎询价
NEC
22+
SOT-23
25000
只有原装原装,支持BOM配单
POWER
23+
23
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
NEC
2023+
SOT23
58000
进口原装,现货热卖
NEC
25+23+
Sot-23
33821
绝对原装正品全新进口深圳现货
NEC
2019+
SOT23
3333
原厂渠道 可含税出货
RENESAS/瑞萨
24+
SOT-23
17500
郑重承诺只做原装进口现货
NEC
23+
SOT-23
24190
原装正品代理渠道价格优势

2SC37芯片相关品牌

  • ACT
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  • Balluff
  • CONEC
  • FESTO
  • Kingbright
  • MCNIX
  • PASTERNACK
  • RSG
  • SUNTSU
  • Transko
  • XPPOWER

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    只做原装假一赔十

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