POWER TRANSISTOR

POWER TRANSISTORS

Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

Silicon NPN epitaxial planar type For UHF band low-noise amplification ■ Features • Low noise figure NF • High forward transfer gain |S21e|2 • High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magaz

Printer Driver Applications

Printer Driver Applications Features · High DC current gain. · Large current capacityu and wide ASO. · Contains a Zener diode across collector and base. Applications · Switching of L load (motor drivers, printer drivers, relay drivers).

Silicon NPN epitaxial planer type(For UHF amplification)

Silicon NPN epitaxial planar type For UHF amplification ■ Features • Possible with the small current and low voltage • High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

Silicon NPN Epitaxial Planar type

Features ● Possible with the small current and low voltage ● High transition frequency fT ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

Low-Frequency Driver Applications

Low-Frequency Driver Applications Features • Adoption of FBET process. • AF amp, AF power amp. • High breakdown voltage : VCEO>80V

NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS)

HIGH CURRENT SWITCHING APPLICATIONS ​​​​​​​ • Low Collector Saturation Voltage: VCE (sat)= 0.4V (Max.) • High-Speed Switching Time: tstg= 1.0μs (Typ.) • Complementary to 2SA1451A

isc Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1451 APPLICATIONS ·Designed for high current switching applications

HIGH CURRENT SWITCHING APPLICATIONS

High-Current Switching Applications ​​​​​​​ • Low collector saturation voltage: VCE (sat)= 0.4 V (max) • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SA1451A

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Complement to type 2SA1452 • Low collector saturation voltage • High speed switching time APPLICATIONS • High current switching applications

Silicon NPN Transistors

Features • With TO-220Fa package • Complement to type 2SA1452 • Hihg current switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Complement to type 2SA1452 • Low collector saturation voltage • High speed switching time APPLICATIONS • High current switching applications

High-Current Switching Applications

High-Current Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A

HIGH CURRENT SWITCHING APPLICATIONS

High-Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SA1452A

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@IC= 6A • Fast Switching Speed • Complement to Type 2SA1452A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for high current switchin

High-Power Switching Applications

High-Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SA1452A

High-Current Switching Applications

High-Current Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A

High-Power Switching Applications

High-Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SA1452A

High Switching Speed

DESCRIPTION • High Switching Speed • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)

2SC3714

Switching Power Transistor 20 A (NPN)

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) • High Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for high speed switching and horizontal deflection output applications.

Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO= 800V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications.

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO= 800V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers

MOLD TYPE BIPOLAR TRANSISTORS

MOLD TYPE BIPOLAR TRANSISTORS Rating and Specifications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers

Small Signal Transistor

Features ● High hFE=150 to 800. ● High collector current (Ic=2A). ● High collector dissipation Pc=500mW. ● Low VCE(sat): VCE(sat)=0.17V typ(@Ic=1A,IB=50mA). ● Small package for mounting.

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO= 800V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for TV horizontal deflection output applications.

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC3731 is designed for general purpose amplifier and high speed switching applications. FEATURES ● High Frequency Current Gain. ● High Speed Switching. ● Small Output Capacitance. ● Complementary to the NEC 2SA1458 PNP transistor.

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC3732 is designed for general purpose amplifier and high speed switching applications. FEATURES ● High Frequency Current Gain. ● High Speed Switching. ● Small Output Capacitance.

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC3733 is designed for power amplifier and high speed switching applications. FEATURES ● High speed, high voltage switching. ● Low Collector Saturation Voltage. ● Complementary to the NEC 2SA1460 PNP transistor.

HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

FEATURES ● High Speed: tstg

NPN Silicon Epitaxia

Features High speed : tstg

HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

FEATURE ● High Speed: ton

SILICON TRANSISTOR

HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR FEATURES • High-speed switching • Low collector saturation voltage • High gain bandwidth product • Low collector capacitance • Can be used complementary to the 2SA1462. • Package: 3-pin Mini Mold (SC-59)

HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

FEATURE ● High Speed: ton

NPN Silicon Epitaxia

Features High speed,high voltage switching. Low collector saturation voltage

HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SC3736 is designed for power amplifier and high speed switching applications. FEATURES ● High speed, high voltage switching. ● Low Collector Saturation Voltage. ● Complementary to the NEC 2SA1460 PNP transistor.

SILICON TRANSISTOR

HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3736 is designed for power amplifier and high speed switching applications. FEATURES • High speed, high voltage switching • Low collector saturation voltage • Complementary to the 2SA1460 PNP tran

NPN Transistors

■ Features ● High Speed,High Voltage Switching ● Low Collector Saturation Voltage ● Complementary to 2SA1463-HF ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

NPN Transistors

■ Features ● High Speed,High Voltage Switching ● Low Collector Saturation Voltage ● Complementary to 2SA1463-HF ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

NPN Transistors

■ Features ● High Speed,High Voltage Switching ● Low Collector Saturation Voltage ● Complementary to 2SA1463-HF ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications.

NPN Silicon Epitaxia

Features ● High gain bandwidth product: fT=200MHz.

Old Company Name in Catalogs and Other Documents

FEATURES ● High Gain Bandwidth Product: fT = 200 MHz MIN. ● Complementary to 2SA1464

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

FEATURES ● High Gain Bandwidth Product: fT = 200 MHz MIN. ● Complementary to 2SA1464

NPN Transistors

■ Features ● High Gain Bandwidth Product:fT=200MHz(min) ● Complementary to 2SA1464-HF ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

NPN Transistors

■ Features ● High Gain Bandwidth Product:fT=200MHz(min) ● Complementary to 2SA1464-HF ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

NPN Transistors

■ Features ● High Gain Bandwidth Product:fT=200MHz(min) ● Complementary to 2SA1464-HF ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

NPN Transistors

■ Features ● High Gain Bandwidth Product:fT=200MHz(min) ● Complementary to 2SA1464-HF ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES ● High Gain Bandwidth Product: fT = 200 MHz MIN. ● Complementary to 2SA1464

SILICON TRANSISTOR

AUDIO FREQUENCY AMPLIFIER SILICON EPITAXIAL TRANSISTOR MINI MOLD

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features • High-speed switching • Wide safe operation area and high breakdown voltage • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the he

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emiiter Breakdown Voltage- : V(BR)CEO= 800V(Min.) • Wide Area of Safe Operation • High Speed Switching APPLICATIONS • Designed for high speed switching applications.

60V/5A High-Speed Switching Applications

60V/5A High-Speed Switching Applications Features • Low saturation voltage. • Excellent current dependence of hFE. • Short switching time. • Micaless package facilitating mounting. Applications • Various inductance lamp drivers for electrical equipment. • Inverters, converters (strobo,