2SC366晶体管资料

  • 2SC366别名:2SC366三极管、2SC366晶体管、2SC366晶体三极管

  • 2SC366生产厂家:日本东芝公司

  • 2SC366制作材料:Si-NPN

  • 2SC366性质:通用型 (Uni)

  • 2SC366封装形式:直插封装

  • 2SC366极限工作电压:50V

  • 2SC366最大电流允许值:0.4A

  • 2SC366最大工作频率:<1MHZ或未知

  • 2SC366引脚数:3

  • 2SC366最大耗散功率:0.3W

  • 2SC366放大倍数

  • 2SC366图片代号:A-20

  • 2SC366vtest:50

  • 2SC366htest:999900

  • 2SC366atest:0.4

  • 2SC366wtest:0.3

  • 2SC366代换 2SC366用什么型号代替:BC337,BC377,BC637,BC737,2N2220,2N2221,2N2222,3DK4B,

型号 功能描述 生产厂家 企业 LOGO 操作

High-hFE, Low-Frequency General-Purpose Amp Applications???????

High hFE, Low-Frequency General-Purpose Amplifier Applications Features • Very small-sized package permitting 2SC3661-used sets to be made smaller, slimmer. • Adoption of FBET process. • High DC current gain (hFE=800 to 3200). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). •

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor

Features ● Low frequency general-purpose amplifiers, drivers, muting circuit. ● Adoption of FBET process. ● High DC current gain (hFE=800 to 3200). ● Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). ● High VEBO (VEBO 15V).

KEXIN

科信电子

NPN Epitaxial Silicon Transistor

Features ● Low-voltage, low-current, low-noise and high-gain NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz ● Ideal for battery drive of pagers, compact radio equipment cordless phones, etc. ● Gold electrode gives high relia

KEXIN

科信电子

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

FEATURES • Low-voltage, low-current, low-noise and high-gain NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz • Ideal for battery drive of pagers, compact radio equipment, cordless phones, etc. • Gold electrode gives high reliabil

NEC

瑞萨

High-Voltage Switching Applications

400V/20A Driver Applications Applications · Induction cookers. · High-voltage, high power switching. Features · Fast speed (adoption of MBIT process). · High breakdown voltage (VCBO=800V). · High reliability (adoption of HVP process). · On-chip damper diode.

SANYO

三洋

NPN EPITAXIAL TYPE (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)

Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Complementary to 2SA1425.

TOSHIBA

东芝

Audio Power Amplifier Applications Driver-Stage Amplifier Applications

Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Complementary to 2SA1425.

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Audio Power Amplifier Applications Driver-Stage Amplifier Applications

Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Complementary to 2SA1425.

TOSHIBA

东芝

NPN EPITAXIAL TYPE (AUDIO POWER APLIFIER APPLICATIONS)

Audio Power Amplifier Applications • High DC current gain: hFE (1)= 100 to 320 • High power dissipation: PC= 1000 mW

TOSHIBA

东芝

NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW • High-speed switching: tstg = 1.0 µ (typ.) • Complementary to 2SA1428.

TOSHIBA

东芝

NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1429

TOSHIBA

东芝

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS ​​​​​​​POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage VCE(SAT)=0.5V (Max.) * High speed switching time: TSTG=1.0μs (Typ.)

UTC

友顺

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

RENESAS

瑞萨

For amplify high frequency and low noise.

NEC

瑞萨

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

RENESAS

瑞萨

Audio Power Amplifier Applications Driver-Stage Amplifier Applications

文件:116.77 Kbytes Page:3 Pages

TOSHIBA

东芝

Audio Power Amplifier Applications Driver-Stage Amplifier Applications

文件:116.77 Kbytes Page:3 Pages

TOSHIBA

东芝

封装/外壳:SC-71 包装:散装 描述:TRANS NPN 120V 0.8A MSTM 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

封装/外壳:SC-71 包装:散装 描述:TRANS NPN 120V 0.8A MSTM 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

Audio Power Amplifier Applications

文件:120.38 Kbytes Page:3 Pages

TOSHIBA

东芝

Audio Power Amplifier Applications

文件:120.38 Kbytes Page:3 Pages

TOSHIBA

东芝

Power Amplifier Applications Power Switching Applications

文件:150.89 Kbytes Page:5 Pages

TOSHIBA

东芝

Power Amplifier Applications Power Switching Applications

文件:150.89 Kbytes Page:5 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications

文件:140.72 Kbytes Page:5 Pages

TOSHIBA

东芝

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

文件:123.48 Kbytes Page:3 Pages

UTC

友顺

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications

文件:140.72 Kbytes Page:5 Pages

TOSHIBA

东芝

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

文件:294.12 Kbytes Page:4 Pages

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

文件:123.48 Kbytes Page:3 Pages

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

文件:294.12 Kbytes Page:4 Pages

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

文件:294.12 Kbytes Page:4 Pages

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

文件:294.12 Kbytes Page:4 Pages

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

文件:294.12 Kbytes Page:4 Pages

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

文件:294.12 Kbytes Page:4 Pages

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

文件:294.12 Kbytes Page:4 Pages

UTC

友顺

2SC366产品属性

  • 类型

    描述

  • 型号

    2SC366

  • 制造商

    SANYO

  • 功能描述

    TRANS, NPN, 25V, 0.3A, SOT23 Tape & Reel

  • 制造商

    SANYO Semiconductor Co Ltd

  • 功能描述

    TRANS NPN 25V 0.3A SOT23

更新时间:2025-12-25 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANYO/三洋
24+
NA/
3000
优势代理渠道,原装正品,可全系列订货开增值税票
SANYO/三洋
25+
SOT-23
54558
百分百原装现货 实单必成 欢迎询价
SANYO
24+
SOT-23
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SONY/索尼
24+
SOT23
8540
只做原装正品现货或订货假一赔十!
SANYO
22+
SOT23
20000
公司只有原装 品质保证
SANYO/三洋
25+
SOT-23
860000
明嘉莱只做原装正品现货
SANYO
25+
SOT23
865
百分百原装正品 真实公司现货库存 本公司只做原装 可
SANYO/三洋
25+
SOT23
32000
SANYO/三洋全新特价2SC3661-TB-E即刻询购立享优惠#长期有货
SANYO/三洋
21+
SOT-23
33200
优势供应 实单必成 可13点增值税
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!

2SC366数据表相关新闻

  • 2SC2712G-SOT23.3R-Y-TG

    2SC2712G-SOT23.3R-Y-TG

    2023-1-31
  • 2SC3356

    2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.

    2021-3-23
  • 2SC380TM-O

    只做原装假一赔十

    2020-11-14
  • 2SC3671-B,T2F(J

    产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors

    2020-11-5
  • 2SC3998中文资料

    2SC3998中文资料

    2019-2-18
  • 2SC2859中文资料

    2SC2859中文资料

    2019-2-18