2SC3668晶体三极管中文资料下载供应代理商东芝-IC资料网

找IC，尽在114IC

登录注册

芯片资料

芯片资料
丝印反查
库存查询
行业新闻
制造商
替换型号
晶体管

精确

位置：首页 > IC中文资料 > 2SC366

2SC366晶体管资料

2SC366别名：2SC366三极管、2SC366晶体管、2SC366晶体三极管
2SC366生产厂家：日本东芝公司
2SC366制作材料：Si-NPN
2SC366性质：通用型（Uni）
2SC366封装形式：直插封装
2SC366极限工作电压：50V
2SC366最大电流允许值：0.4A
2SC366最大工作频率：<1MHZ或未知
2SC366引脚数：3
2SC366最大耗散功率：0.3W
2SC366放大倍数：
2SC366图片代号：A-20
2SC366vtest：50
2SC366htest：999900
2SC366atest：0.4
2SC366wtest：0.3

2SC366代换 2SC366用什么型号代替：BC337,BC377,BC637,BC737,2N2220,2N2221,2N2222,3DK4B,

型号	功能描述	生产厂家企业	LOGO
2SC3661	High-hFE, Low-Frequency General-Purpose Amp Applications??????? High hFE, Low-Frequency General-Purpose Amplifier Applications Features • Very small-sized package permitting 2SC3661-used sets to be made smaller, slimmer. • Adoption of FBET process. • High DC current gain (hFE=800 to 3200). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). •	SANYO 三洋	SANYO
2SC3661	NPN Epitaxial Planar Silicon Transistor Features ● Low frequency general-purpose amplifiers, drivers, muting circuit. ● Adoption of FBET process. ● High DC current gain (hFE=800 to 3200). ● Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). ● High VEBO (VEBO 15V).	KEXIN 科信电子	KEXIN
2SC3663	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURES • Low-voltage, low-current, low-noise and high-gain NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz • Ideal for battery drive of pagers, compact radio equipment, cordless phones, etc. • Gold electrode gives high reliabil	NEC 瑞萨	NEC
2SC3663	NPN Epitaxial Silicon Transistor Features ● Low-voltage, low-current, low-noise and high-gain NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz ● Ideal for battery drive of pagers, compact radio equipment cordless phones, etc. ● Gold electrode gives high relia	KEXIN 科信电子	KEXIN
2SC3663-T1B	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURES\n• Low-voltage, low-current, low-noise and high-gain\n NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz\n GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz\n• Ideal for battery drive of pagers, compact radio equipment, cordless phones, etc.\n• Gold electrode gives high reliabilit • Low-voltage, low-current, low-noise and high-gain\n NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz\n GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz\n• Ideal for battery drive of pagers, compact radio equipment, cordless phones, etc.\n• Gold electrode gives high reliability.\n• Mini;	RENESAS 瑞萨	RENESAS
2SC3664	High-Voltage Switching Applications 400V/20A Driver Applications Applications · Induction cookers. · High-voltage, high power switching. Features · Fast speed (adoption of MBIT process). · High breakdown voltage (VCBO=800V). · High reliability (adoption of HVP process). · On-chip damper diode.	SANYO 三洋	SANYO
2SC3665	NPN EPITAXIAL TYPE (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS) Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Complementary to 2SA1425.	TOSHIBA 东芝	TOSHIBA
2SC3665	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC3665	Audio Power Amplifier Applications Driver-Stage Amplifier Applications Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Complementary to 2SA1425.	TOSHIBA 东芝	TOSHIBA
2SC3665-Y	Audio Power Amplifier Applications Driver-Stage Amplifier Applications Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Complementary to 2SA1425.	TOSHIBA 东芝	TOSHIBA
2SC3666	NPN EPITAXIAL TYPE (AUDIO POWER APLIFIER APPLICATIONS) Audio Power Amplifier Applications • High DC current gain: hFE (1)= 100 to 320 • High power dissipation: PC= 1000 mW	TOSHIBA 东芝	TOSHIBA
2SC3668	NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS) Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW • High-speed switching: tstg = 1.0 µ (typ.) • Complementary to 2SA1428.	TOSHIBA 东芝	TOSHIBA
2SC3668	Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 50V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): 0.5V(Max) @IC= 1.0A APPLICATIONS · Power Amplifier Applications · Power Switching Applications	ISC 无锡固电	ISC
2SC3669	NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS) Power Amplifier Applications Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1429	TOSHIBA 东芝	TOSHIBA
2SC3669	POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage VCE(SAT)=0.5V (Max.) * High speed switching time: TSTG=1.0μs (Typ.)	UTC 友顺	UTC
2SC3663	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION	RENESAS 瑞萨	RENESAS
2SC3663-L	For amplify high frequency and low noise.	NEC 瑞萨	NEC
2SC3665	Audio Power Amplifier Applications Driver-Stage Amplifier Applications 文件：116.77 Kbytes Page：3 Pages	TOSHIBA 东芝	TOSHIBA
2SC3665_04	Audio Power Amplifier Applications Driver-Stage Amplifier Applications 文件：116.77 Kbytes Page：3 Pages	TOSHIBA 东芝	TOSHIBA
2SC3665-Y,T2F(J	封装/外壳：SC-71 包装：散装描述：TRANS NPN 120V 0.8A MSTM 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ETC 知名厂家	ETC
2SC3665-Y,T2NSF(J	封装/外壳：SC-71 包装：散装描述：TRANS NPN 120V 0.8A MSTM 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ETC 知名厂家	ETC
2SC3666	Audio Power Amplifier Applications 文件：120.38 Kbytes Page：3 Pages	TOSHIBA 东芝	TOSHIBA
2SC3666_04	Audio Power Amplifier Applications 文件：120.38 Kbytes Page：3 Pages	TOSHIBA 东芝	TOSHIBA
2SC3668	Power Amplifier Applications Power Switching Applications 文件：150.89 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SC3668_04	Power Amplifier Applications Power Switching Applications 文件：150.89 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SC3669	POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 文件：123.48 Kbytes Page：3 Pages	UTC 友顺	UTC
2SC3669	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications 文件：140.72 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SC3669_04	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications 文件：140.72 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SC3669_15	POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 文件：294.12 Kbytes Page：4 Pages	UTC 友顺	UTC
2SC3669_2	POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 文件：123.48 Kbytes Page：3 Pages	UTC 友顺	UTC
2SC3669G-X-AA3-R	POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 文件：294.12 Kbytes Page：4 Pages	UTC 友顺	UTC
2SC3669G-X-AB3-R	POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 文件：294.12 Kbytes Page：4 Pages	UTC 友顺	UTC
2SC3669G-X-TM3-T	POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 文件：294.12 Kbytes Page：4 Pages	UTC 友顺	UTC
2SC3669G-X-TN3-R	POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 文件：294.12 Kbytes Page：4 Pages	UTC 友顺	UTC
2SC3669L-X-TM3-T	POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 文件：294.12 Kbytes Page：4 Pages	UTC 友顺	UTC
2SC3669L-X-TN3-R	POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 文件：294.12 Kbytes Page：4 Pages	UTC 友顺	UTC

2SC366产品属性

类型
描述
BVCEO(V)：
80
BVCBO(V)：
80
IC(A)：
2
HFE_MIN.：
70
HFE_MAX.：
240
HFEtest_IC(mA)：
500
HFEtest_VCE(V)：
2
VCE(Sat)(V)MAX.：
0.5
VCE(Sat)test_IC(mA)：
1000
VCE(Sat)test_Ib(mA)：
50
Package：
SOT-89_SOT-223_TO-251_TO-252

2SC366供应商更多...

更新时间：2026-5-14 19:34:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市联世界科技有限公司	2SC3668-Y	TOSHIBA	24+/25+		2998	原装正品现货库存价优	询价
深圳市科恒伟业电子有限公司	2SC3668	TOSHIBA/东芝	2450+	DIP-3	8850	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市一线半导体有限公司	2SC3668-Y	TOSHIBA	24+	DIP-3	3200		询价
深圳市向鸿伟业电子有限公司	2SC3668	TOSHIBA/东芝	2403+	TO92F	6489	原装现货热卖!十年芯路!坚持!	询价
深圳市创新迹电子有限公司	2SC3669G-O-AA3-R	UTC/友顺	22+	SOT-223	20000	只做原装	询价
深圳市盈慧通电子有限公司	2SC3669G-O-AA3-R	UTC/友顺	2511	SOT-223	360000	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
深圳市东来宝电子科技有限公司	2SC3668	TOSHIBA/东芝	24+	DIP-3	27950	郑重承诺只做原装进口现货	询价
深圳市赛美科科技有限公司	2SC3669-Y	TOS		ATV	8553	一级代理原装正品假一罚十价格优势长期供货	询价
艾睿（深圳）半导体有限公司	2SC3668	TOSHIBA/东芝	2447	TO-92LM	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市安富世纪电子有限公司	2SC3669	HGF	23+	TO-92L	7600	专注配单,只做原装进口现货	询价

2SC366芯片相关品牌

2SC366规格书下载地址

2SC366参数引脚图相关

2SC366数据表相关新闻

2SC2712G-SOT23.3R-Y-TG
2SC2712G-SOT23.3R-Y-TG
2023-1-31
2SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-23
2SC380TM-O
只做原装假一赔十
2020-11-14
2SC3671-B,T2F(J
产品属性属性值搜索类似制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
2020-11-5
2SC3998中文资料
2SC3998中文资料
2019-2-18
2SC2859中文资料
2SC2859中文资料
2019-2-18

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107
P108
P109

找IC，尽在114IC

2SC366晶体管资料

2SC366产品属性

2SC366供应商更多...

2SC366芯片相关品牌

2SC366规格书下载地址

2SC366参数引脚图相关

2SC366数据表相关新闻

2SC2712G-SOT23.3R-Y-TG

2SC3356

2SC380TM-O

2SC3671-B,T2F(J

2SC3998中文资料

2SC2859中文资料

DdatasheetPDF页码索引