high-Definition CRT Display Video Output Applications?

Ultrahigh-Definition CRT Display Video Output Applications Features • High fT : fT typ=400MHz. • High breakdown voltage : VCEO≥200V. • Small reverse transfer capacitance and excellent HF response : Cre=1.4pF (NPN), 1.7pF (PNP). • Complementary PNP and NPN types. • Adoption of FBET process.

Ultrahigh-Definition CRT Display Video Output Applications?

Ultrahigh-Definition CRT Display Video Output Applications Features · High fT: fTtyp=400MHz. · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.0pF (NPN), 2.5pF (PNP). · Complementary PNP and NPN types. · Adoption o

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.

SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic ran

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

The 2SC3604 is an NPN epitaxial transistor designed for low noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. FEATURES • Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz • High power gai

SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic ran

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

The 2SC3604 is an NPN epitaxial transistor designed for low noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. FEATURES • Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz • High power gai

TRANSISTOR

3SK121 datasheet pdf

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS FEATURES: ● Low Noise Figure, High Gain ● NF = 1.1dB, |S21e|2 = 10dB (f = 1GHz)

Silicon NPN Epitaxial Planar Type

Features Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF ~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications Low noise figure, high gain. NF = 1.1dB, |S21e|2= 9.5dB (f = 1 GHz)

TRANSISTOR

3SK121 datasheet pdf

NPN Epitaxial Planar Silicon Transistors Ultrahigh-Definition CRT Display Video Output Applications

TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS

Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

2SC3608

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