2SC355晶体管资料
2SC355别名：2SC355三极管、2SC355晶体管、2SC355晶体三极管
2SC355生产厂家：日本富士通公司
2SC355制作材料：Si-NPN
2SC355性质：甚高频 （VHF）_功率放大 （L）
2SC355封装形式：特殊封装
2SC355极限工作电压：75V
2SC355最大电流允许值：2.5A
2SC355最大工作频率：150MHZ
2SC355引脚数：3
2SC355最大耗散功率：3W
2SC355放大倍数：
2SC355图片代号：F-28
2SC355vtest：75
2SC355htest：150000000
- 2SC355atest：2.5
2SC355wtest：3
2SC355代换 2SC355用什么型号代替：BLY35,BLY60,2N3632,3DA4G,40307,40665,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 800V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers | ISC 无锡固电 |   | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers | SAVANTIC | | ||
TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers | FUJI 富士通 | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers | ISC 无锡固电 | | ||
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications. | ISC 无锡固电 | | ||
Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION) GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose | WINGS 永盛电子 | | ||
For Switching Regulators 800V/12A Switching Regulator Applications Features • High breakdown voltage and high reliability. • Fast switching speed (tf : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. | SANYO 三洋 | | ||
SI NPN POWER BJT, I(C) = 10A TO 19.9A SI NPN POWER BJT, I(C) = 10A TO 19.9A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Epitaxial Application Low frequency amplifier | HITACHIHitachi Semiconductor 日立日立公司 | | ||
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SC3554 is designed for high Voltage Switching application, especially in Hybrid Integrated Circuits. FEATURES ● World Standard Miniature Package ● High Voltage : VCEO = 300 V | NEC 瑞萨 | | ||
Old Company Name in Catalogs and Other Documents DESCRIPTION 2SC3554 is designed for high Voltage Switching application, especially in Hybrid Integrated Circuits. FEATURES ● High Voltage : VCEO = 300 V | RENESAS 瑞萨 | | ||
Small Signal Bipolar Transistors Support is limited to customers who have already adopted these products. | RENESAS 瑞萨 | | ||
Silicon NPN Power Transistors DESCRIPTION · With TO-220C package ·Low collector saturation voltage APPLICATIONS ·For medium power linear and switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Low collector saturation voltage APPLICATIONS ·For medium power linear and switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION 1. With TO-220Fa package 2. High breakdown voltage 3. High speed switching APPLICATIONS 1. Switching regulator and high voltage switching applications 2. High speed DC-DC converter applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·High speed switching APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：237.47 Kbytes Page：4 Pages | SAVANTIC | | ||
For Switching Regulators | ONSEMI 安森美半导体 | | ||
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD 文件：1.26806 Mbytes Page：6 Pages | RENESAS 瑞萨 | | ||
Silicon NPN Power Transistors 文件：89.07 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：168.51 Kbytes Page：4 Pages | SAVANTIC | |
2SC355产品属性
- 类型
描述
- VCEO (V)：
300
- IC @25 °C (A)：
0.2
- VCE (sat) (V)：
1.5
- hFE：
60-250
- Pc (W)：
2
- fT (Typical) (GHz)：
0.05
- Cob (Typical) (pF)：
2.8
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
20+ |
TO-3P |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
sanyo |
24+ |
TO-3PB |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
N/A |
23+ |
NA |
256 |
专做原装正品,假一罚百! |
|||
SANYO |
18+ |
TO3P |
85600 |
保证进口原装可开17%增值税发票 |
|||
NEC |
25+23+ |
Sot-89 |
34329 |
绝对原装正品全新进口深圳现货 |
|||
SANYO |
24+ |
6226 |
|||||
NEC |
25+ |
SOT89 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
RENESAS/瑞萨 |
22+ |
SOT-89 |
20000 |
只做原装 |
|||
NEC/RENESAS |
25+ |
SOT-89 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
SANYO |
2012 |
TO-3P |
94 |
全新 发货1-2天 |
2SC355规格书下载地址
2SC355参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SC3580
- 2SC3577
- 2SC3576
- 2SC3572
- 2SC3571
- 2SC3570
- 2SC3569
- 2SC3568
- 2SC3567
- 2SC3566
- 2SC3565
- 2SC3564
- 2SC3563
- 2SC3562
- 2SC3561
- 2SC3560
- 2SC356
- 2SC3559
- 2SC3558
- 2SC3557
- 2SC3556
- 2SC3555
- 2SC3554
- 2SC3553
- 2SC3552
- 2SC3551
- 2SC3550
- 2SC3549
- 2SC3548
- 2SC3547(A,B)
- 2SC3547
- 2SC3546
- 2SC3545
- 2SC3544
- 2SC3542
- 2SC3541
- 2SC3540
- 2SC354
- 2SC3539
- 2SC3538
- 2SC3537
- 2SC3536
- 2SC3535
- 2SC3534
- 2SC3533
- 2SC3532
- 2SC3531
- 2SC353(A)
- 2SC3528
- 2SC3527
- 2SC3526
- 2SC3519
- 2SC3518
- 2SC3515
- 2SC3514
- 2SC3513
- 2SC3512
- 2SC3510
- 2SC3507
- 2SC3506
- 2SC3505
- 2SC3504
2SC355数据表相关新闻
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2SC2712G-SOT23.3R-Y-TG
2023-1-312SC3356
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产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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DdatasheetPDF页码索引
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