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2SC355晶体管资料
2SC355别名:2SC355三极管、2SC355晶体管、2SC355晶体三极管
2SC355生产厂家:日本富士通公司
2SC355制作材料:Si-NPN
2SC355性质:甚高频 (VHF)_功率放大 (L)
2SC355封装形式:特殊封装
2SC355极限工作电压:75V
2SC355最大电流允许值:2.5A
2SC355最大工作频率:150MHZ
2SC355引脚数:3
2SC355最大耗散功率:3W
2SC355放大倍数:
2SC355图片代号:F-28
2SC355vtest:75
2SC355htest:150000000
- 2SC355atest:2.5
2SC355wtest:3
2SC355代换 2SC355用什么型号代替:BLY35,BLY60,2N3632,3DA4G,40307,40665,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 800V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers | ISC 无锡固电 | |||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers | SAVANTIC | |||
TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers | Fuji 富士通 | |||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers | ISC 无锡固电 | |||
For Switching Regulators 800V/12A Switching Regulator Applications Features • High breakdown voltage and high reliability. • Fast switching speed (tf : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. | SANYO 三洋 | |||
SI NPN POWER BJT, I(C) = 10A TO 19.9A SI NPN POWER BJT, I(C) = 10A TO 19.9A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications. | ISC 无锡固电 | |||
Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION) GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose | WINGS 永盛电子 | |||
Silicon NPN Epitaxial Application Low frequency amplifier | HitachiHitachi Semiconductor 日立日立公司 | |||
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SC3554 is designed for high Voltage Switching application, especially in Hybrid Integrated Circuits. FEATURES ● World Standard Miniature Package ● High Voltage : VCEO = 300 V | NEC 瑞萨 | |||
Old Company Name in Catalogs and Other Documents DESCRIPTION 2SC3554 is designed for high Voltage Switching application, especially in Hybrid Integrated Circuits. FEATURES ● High Voltage : VCEO = 300 V | RENESAS 瑞萨 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Low collector saturation voltage APPLICATIONS ·For medium power linear and switching applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION · With TO-220C package ·Low collector saturation voltage APPLICATIONS ·For medium power linear and switching applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·High speed switching APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION 1. With TO-220Fa package 2. High breakdown voltage 3. High speed switching APPLICATIONS 1. Switching regulator and high voltage switching applications 2. High speed DC-DC converter applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors 文件:237.47 Kbytes Page:4 Pages | SAVANTIC | |||
For Switching Regulators | ONSEMI 安森美半导体 | |||
Small Signal Bipolar Transistors | RENESAS 瑞萨 | |||
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD 文件:1.26806 Mbytes Page:6 Pages | RENESAS 瑞萨 | |||
Silicon NPN Power Transistors 文件:89.07 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon NPN Power Transistors 文件:168.51 Kbytes Page:4 Pages | SAVANTIC |
2SC355产品属性
- 类型
描述
- 型号
2SC355
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY HITACHI TRANSISTOR SP 35V .5A .3W ECB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC/RENESAS |
24+ |
SOT-89 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS/瑞萨 |
2511 |
SOT-89 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
NEC |
23+ |
SOT-89 |
705700 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
NEC |
25+ |
SOT89 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
NEC |
SOT89 |
53650 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
NEC |
23+ |
SOT-89 |
24190 |
原装正品代理渠道价格优势 |
|||
NEC |
1922+ |
SOT-89 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
NEC |
23+ |
SOT89 |
50000 |
全新原装正品现货,支持订货 |
|||
NEC |
25+23+ |
Sot-89 |
34329 |
绝对原装正品全新进口深圳现货 |
|||
NEC |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
2SC355芯片相关品牌
2SC355规格书下载地址
2SC355参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
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- 3q1
- 3g汽车
- 3579
- 35001
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- 31337
- 303c
- 2sc4226
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- 2SC3577
- 2SC3576
- 2SC3572
- 2SC3571
- 2SC3570
- 2SC3569
- 2SC3568
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- 2SC3566
- 2SC3565
- 2SC3564
- 2SC3563
- 2SC3562
- 2SC3561
- 2SC3560
- 2SC356
- 2SC3559
- 2SC3558
- 2SC3557
- 2SC3556
- 2SC3555
- 2SC3554
- 2SC3553
- 2SC3552
- 2SC3551
- 2SC3550
- 2SC3549
- 2SC3548
- 2SC3547(A,B)
- 2SC3547
- 2SC3546
- 2SC3545
- 2SC3544
- 2SC3542
- 2SC3541
- 2SC3540
- 2SC354
- 2SC3539
- 2SC3538
- 2SC3537
- 2SC3536
- 2SC3535
- 2SC3534
- 2SC3533
- 2SC3532
- 2SC3531
- 2SC353(A)
- 2SC3528
- 2SC3527
- 2SC3526
- 2SC3519
- 2SC3518
- 2SC3515
- 2SC3514
- 2SC3513
- 2SC3512
- 2SC3510
- 2SC3507
- 2SC3506
- 2SC3505
- 2SC3504
2SC355数据表相关新闻
2SC2712G-SOT23.3R-Y-TG
2SC2712G-SOT23.3R-Y-TG
2023-1-312SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.
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只做原装假一赔十
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产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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