功率三极管

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. • Complement to 2SA1385-Z

SILICON POWER TRANSISTOR

DESCRIPTION The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. • Complement to 2SA1385-Z

isc Silicon NPN Power Transistor

DESCRIPTION • Low collector saturation voltage • High DC current gain • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • This transistor is ideal for audio frequency amplifier and switching especially in hybrid i

NPN Silicon Epitaxia

Features ● Low VCE(sat). ● Fast switching speed. ● High DC current gain.

isc Silicon NPN Power Transistor

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