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2SC351晶体管资料
2SC351别名:2SC351三极管、2SC351晶体管、2SC351晶体三极管
2SC351生产厂家:日本东芝公司
2SC351制作材料:Si-NPN
2SC351性质:射频/高频放大 (HF)
2SC351封装形式:直插封装
2SC351极限工作电压:40V
2SC351最大电流允许值:0.02A
2SC351最大工作频率:600MHZ
2SC351引脚数:3
2SC351最大耗散功率:0.2W
2SC351放大倍数:
2SC351图片代号:A-20
2SC351vtest:40
2SC351htest:600000000
- 2SC351atest:.02
2SC351wtest:.2
2SC351代换 2SC351用什么型号代替:BF198,BF199,BF224,BF225,BF311,BF373,BF505,3DG112D,
2SC351价格
参考价格:¥12.6022
型号:2SC3519A 品牌:Sanken 备注:这里有2SC351多少钱,2024年最近7天走势,今日出价,今日竞价,2SC351批发/采购报价,2SC351行情走势销售排行榜,2SC351报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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SiliconNPNEpitaxial UHF/VHFwidebandamplifier | HitachiHitachi, Ltd. 日立公司 | |||
iscSiliconNPNRFTransistor DESCRIPTION •LowNoiseandHighGainNF=1.6dBTYP.@f=900MHzPG=10.5dBTYP.@f=900MHz APPLICATIONS •Designedforuseinlow-noiseandsmallsignalamplifiersfromVHF~UHFband. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNEpitaxial Application UHF/VHFwidebandamplifier | HitachiHitachi, Ltd. 日立公司 | |||
SiliconNPNEpitaxial Application UHF/VHFwidebandamplifier | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconNPNEpitaxial Application UHF/VHFwidebandamplifier | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconNPNEpitaxial ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SiliconNPNEpitaxial Application UHF/VHFwidebandamplifier | HitachiHitachi, Ltd. 日立公司 | |||
PNP/NPNSILICONEPITAXIALTRANSISTOR PNP/NPNSiliconEpitaxialTransistor AudioFrequencyPowerAmplifier | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
iscSiliconNPNPowerTransistor DESCRIPTION ·HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=180V(Min) ·GoodLinearityofhFE ·ComplementtoType2SA1383 APPLICATIONS ·Adudiofrequencypoweramplifier | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HighVoltageControlApplications Features •HighVoltage:VCBO=300V,VCEO=300V •LowSaturationVoltage:VCE(sat)=0.5V(max) •SmallCollectorOutputCapacitance:Cob=3pF(typ.) •PC=1to2W(mountedonceramicsubstrate) •SmallFlatPackage •Complementaryto2SA1384 | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
NPNTRIPLEDIFFUSEDTYPE(HIGHVOLTAGECONTROL,PLASMADISPLAY,NIXIETUBEDRIVER,CATHODERAYTUBEBRIGHTNESSCONTROLAPPLICATIONS) HIGHVoltageControlApplications PlasmaDisplay,NixieTubeDriverApplications CathodeRayTubeBrightnessControlApplications •Highvoltage:VCBO=300V,VCEO=300V •Lowsaturationvoltage:VCE(sat)=0.5V(max) •Smallcollectoroutputcapacitance:Cob=3pF(typ.) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •Lowcollectorsaturationvoltage •HighDCcurrentgain •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Thistransistorisidealforaudiofrequencyamplifierand switchingespeciallyinhybridi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNSILICONEPITAXIALTRANSISTORMP-3 DESCRIPTION The2SC3518-ZisdesignedforAudioFrequencyAmplifierandSwitching,especiallyinHybridIntegratedCircuits. FEATURES •HighDCCurrentGainhFE=100to400 •LowVCE(sat):VCE(sat)=0.09VTYP. •Complementto2SA1385-Z | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NPNSiliconEpitaxia Features ●LowVCE(sat). ●Fastswitchingspeed. ●HighDCcurrentgain. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SILICONPOWERTRANSISTOR DESCRIPTION The2SC3518-ZisdesignedforAudioFrequencyAmplifierandSwitching,especiallyinHybridIntegratedCircuits. FEATURES •HighDCCurrentGainhFE=100to400 •LowVCE(sat):VCE(sat)=0.09VTYP. •Complementto2SA1385-Z | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
POWERTRANSISTORS(15A,130W) HIGH-POWERNPNSILICONPOWERTRANSISTORS 15AMPERESILICONPOWERTRANSISTOR160-180VOLTS130WATTS | MOSPEC MOSPEC | |||
SiliconNPNEpitaxialPlanarTransistor(AudioandGeneralPurpose) Complementtotype2SA1386/A Application:AudioandGeneralPurpose ExternalDimensionsMT-100(TO3P) | SankenSanken Electric Co Ltd. 三垦日本三垦 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Complementtotype2SA1386/A APPLICATIONS ·Audioandgeneralpurpose | SAVANTIC Savantic, Inc. | |||
iscSiliconNPNPowerTransistors DESCRIPTION ·Collector-EmitterBreakdownVoltageV(BR)CEO=160V(Min)-2SC3519 =180V(Min)-2SC3519A ·GoodLinearityofhFE ·ComplementtoType2SA1386/A APPLICATIONS ·Designedforaudioandgeneralpurposeapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
POWERTRANSISTORS(15A,130W) HIGH-POWERNPNSILICONPOWERTRANSISTORS 15AMPERESILICONPOWERTRANSISTOR160-180VOLTS130WATTS | MOSPEC MOSPEC | |||
SiliconNPNEpitaxialPlanarTransistor Complementtotype2SA1386/A Application:AudioandGeneralPurpose ExternalDimensionsMT-100(TO3P) | SankenSanken Electric Co Ltd. 三垦日本三垦 | |||
SiliconNPNEpitaxialPlanarTransistor(AudioandGeneralPurpose) Complementtotype2SA1386/A Application:AudioandGeneralPurpose ExternalDimensionsMT-100(TO3P) | SankenSanken Electric Co Ltd. 三垦日本三垦 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Complementtotype2SA1386/A APPLICATIONS ·Audioandgeneralpurpose | SAVANTIC Savantic, Inc. | |||
SiliconNPNEpitaxialPlanarTransistor FEATURES ●Recommendfor105WhighFiderityaudiofrequencyamplifieroutputstage ●Complementtotype2SA1386B&2SA1386B-A APPLICATIONS ●Audioandgeneralpurpose | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | |||
HIGHVoltageControlApplicationsPlasmaDisplay,NixieTubeDriverApplicationsCathodeRayTubeBrightnessControlApplications 文件:195.94 Kbytes Page:6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
HIGHVoltageControlApplicationsPlasmaDisplay,NixieTubeDriverApplicationsCathodeRayTubeBrightnessControlApplications 文件:195.94 Kbytes Page:6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
iscSiliconNPNPowerTransistor 文件:286.13 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNSILICONEPITAXIALTRANSISTOR 文件:773 Kbytes Page:6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NPNTransistors 文件:1.23724 Mbytes Page:3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
封装/外壳:TO-3P-3,SC-65-3 包装:管件 描述:TRANS NPN 160V 15A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | SankenSanken Electric Co Ltd. 三垦日本三垦 | |||
SiliconNPNEpitaxialPlanarTransistor 文件:34.45 Kbytes Page:1 Pages | SankenSanken Electric Co Ltd. 三垦日本三垦 | |||
SiliconNPNPowerTransistors 文件:176.18 Kbytes Page:4 Pages | SAVANTIC Savantic, Inc. | |||
SiliconNPNEpitaxialPlanarTransistor 文件:33.98 Kbytes Page:1 Pages | SankenSanken Electric Co Ltd. 三垦日本三垦 | |||
SiliconNPNEpitaxialPlanarTransistor 文件:33.98 Kbytes Page:1 Pages | SankenSanken Electric Co Ltd. 三垦日本三垦 | |||
SiliconNPNPowerTransistors 文件:176.18 Kbytes Page:4 Pages | SAVANTIC Savantic, Inc. | |||
SiliconNPNEpitaxialPlanarTransistor 文件:34.45 Kbytes Page:1 Pages | SankenSanken Electric Co Ltd. 三垦日本三垦 | |||
封装/外壳:TO-3P-3,SC-65-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 180V 15A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | SankenSanken Electric Co Ltd. 三垦日本三垦 |
2SC351产品属性
- 类型
描述
- 型号
2SC351
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-9220V .05A .6W BEC
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC/Renesas Electronics Americ |
21+ |
TO-252 |
3000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
05+ |
TO-252 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
2339+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
NEC |
2020+ |
TO-252 |
3400 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
NEC |
23+ |
NA |
2400 |
专做原装正品,假一罚百! |
|||
NEC |
23+ |
TO252-2 |
8890 |
价格优势、原装现货、客户至上。欢迎广大客户来电查询 |
|||
NEC |
23+ |
NA/ |
104 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
23+24 |
TO-252 |
39625 |
优势渠道商.原装原标原盘.提供BOM一站式配单 |
|||
NEC |
22+23+ |
To-252 |
31617 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS/瑞萨 |
22+ |
TO-252 |
10000 |
只做原装进口 免费送样!! |
2SC351规格书下载地址
2SC351参数引脚图相关
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- 4921
- 4899
- 485接口
- 47471
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- 3q1
- 3g汽车
- 3579
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- 31337
- 303c
- 2sc4226
- 2SC3553
- 2SC3552
- 2SC3551
- 2SC3550
- 2SC3549
- 2SC3548
- 2SC3547
- 2SC3545
- 2SC3544
- 2SC3540
- 2SC3528
- 2SC3527
- 2SC3526(H)
- 2SC3526
- 2SC3525
- 2SC3524
- 2SC3523
- 2SC3522
- 2SC3521
- 2SC3520
- 2SC352(A)
- 2SC3519(A)
- 2SC3519
- 2SC3518-Z
- 2SC3518
- 2SC3517
- 2SC3516
- 2SC3515
- 2SC3514
- 2SC3513
- 2SC3512
- 2SC3511
- 2SC3510
- 2SC3509
- 2SC3508
- 2SC3507
- 2SC3506
- 2SC3505
- 2SC3504
- 2SC3503
- 2SC3502
- 2SC3501
- 2SC3500
- 2SC350
- 2SC35
- 2SC3499
- 2SC3498
- 2SC3497
- 2SC3496(A)
- 2SC3496
- 2SC3495
- 2SC3494
- 2SC3493
- 2SC3492
- 2SC3486
- 2SC3485
- 2SC3484
- 2SC3483
- 2SC3482
- 2SC3481
- 2SC3480
- 2SC3479
- 2SC3478
- 2SC3475
2SC351数据表相关新闻
2SC2712G-SOT23.3R-Y-TG
2SC2712G-SOT23.3R-Y-TG
2023-1-312SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取.QQ:1755232575/QQ:1157611585,微信号:87680558.
2021-3-232SC380TM-O
只做原装假一赔十
2020-11-142SC3671-B,T2F(J
产品属性属性值搜索类似 制造商:Toshiba 产品种类:双极晶体管-双极结型晶体管(BJT) 系列:2SC3671 技术:Si 商标:Toshiba 产品类型:BJTs-BipolarTransistors 子类别:Transistors
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2019-2-18
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