Silicon NPN Epitaxial

UHF/VHF wide band amplifier

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise and High Gain NF = 1.6 dB TYP. @f = 900 MHz PG = 10.5 dB TYP. @f = 900 MHz APPLICATIONS • Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band.

Silicon NPN Epitaxial

Application UHF / VHF wide band amplifier

Silicon NPN Epitaxial

Application UHF / VHF wide band amplifier

Silicon NPN Epitaxial

Application UHF / VHF wide band amplifier

Silicon NPN Epitaxial

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Silicon NPN Epitaxial

Application UHF / VHF wide band amplifier

PNP/NPN SILICON EPITAXIAL TRANSISTOR

PNP/NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1383 APPLICATIONS ·Adudio frequency power amplifier

High Voltage Control Applications

Features • High Voltage: VCBO = 300V , VCEO = 300V • Low Saturation Voltage: VCE(sat) = 0.5V (max) • Small Collector Output Capacitance: Cob = 3pF(typ.) • PC = 1 to 2W (mounted on ceramic substrate) • Small Flat Package • Complementary to 2SA1384

NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)

HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

isc Silicon NPN Power Transistor

DESCRIPTION • Low collector saturation voltage • High DC current gain • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • This transistor is ideal for audio frequency amplifier and switching especially in hybrid i

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. • Complement to 2SA1385-Z

NPN Silicon Epitaxia

Features ● Low VCE(sat). ● Fast switching speed. ● High DC current gain.

SILICON POWER TRANSISTOR

DESCRIPTION The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. • Complement to 2SA1385-Z

POWER TRANSISTORS(15A,130W)

HIGH-POWER NPN SILICON POWER TRANSISTORS 15 AMPERE SILICON POWER TRANSISTOR 160 -180 VOLTS 130 WATTS

Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)

Complement to type 2SA1386/A Application : Audio and General Purpose External Dimensions MT-100(TO3P)

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1386/A APPLICATIONS ·Audio and general purpose

isc Silicon NPN Power Transistors

DESCRIPTION ·Collector-Emitter Breakdown Voltage V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A ·Good Linearity of hFE ·Complement to Type 2SA1386/A APPLICATIONS ·Designed for audio and general purpose applications

POWER TRANSISTORS(15A,130W)

HIGH-POWER NPN SILICON POWER TRANSISTORS 15 AMPERE SILICON POWER TRANSISTOR 160 -180 VOLTS 130 WATTS

Silicon NPN Epitaxial Planar Transistor

Complement to type 2SA1386/A Application : Audio and General Purpose External Dimensions MT-100(TO3P)

Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)

Complement to type 2SA1386/A Application : Audio and General Purpose External Dimensions MT-100(TO3P)

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1386/A APPLICATIONS ·Audio and general purpose

Silicon NPN Epitaxial Planar Transistor

FEATURES ● Recommend for 105W high Fiderity audio frequency amplifier output stage ● Complement to type 2SA1386B & 2SA1386B-A APPLICATIONS ● Audio and general purpose

HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications

文件：195.94 Kbytes Page：6 Pages

HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications

文件：195.94 Kbytes Page：6 Pages

isc Silicon NPN Power Transistor

文件：286.13 Kbytes Page：2 Pages

NPN SILICON EPITAXIAL TRANSISTOR

文件：773 Kbytes Page：6 Pages

NPN Transistors

文件：1.23724 Mbytes Page：3 Pages

封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：TRANS NPN 160V 15A TO3P 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Epitaxial Planar Transistor

文件：34.45 Kbytes Page：1 Pages

Silicon NPN Power Transistors

文件：176.18 Kbytes Page：4 Pages

Silicon NPN Epitaxial Planar Transistor

文件：33.98 Kbytes Page：1 Pages

Silicon NPN Epitaxial Planar Transistor

文件：33.98 Kbytes Page：1 Pages

Silicon NPN Power Transistors

文件：176.18 Kbytes Page：4 Pages

Silicon NPN Epitaxial Planar Transistor

文件：34.45 Kbytes Page：1 Pages

封装/外壳：TO-3P-3，SC-65-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 180V 15A TO3P 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个