800MHz band. 24V wideband linear power amplifier For communication industry

Features OHigh efficiency, high output, and linearity at 860MHz. PO=4.8W, Gain=10.8dBTYP. (classA, Vcc=24V, Pi.=0.4W, f=860MHz) ・PC=10.7W, Rc=65%TYP. (classC, Vcc=25V, Pi.=2.5W, f=900MHz) oBuilt-in emitter stabilization resistor. oWide safe operating area. oCan withstand VS

isc Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Breakdown Voltage— : V(BR)CEO = 200 V • Complement to Type 2SA1380 APPLICATIONS • Designed for ultrahigh-definition CRT display, video output applicaitons

Ultrahigh-Definition CRT Display, Video Output Applications???

Ultrahigh-Definition CRT Display, Video Output Applications Features • High breakdown voltage : VCEO≥200V. • Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. • Adoption of FBET process

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

High-Definition CRT Display, Video Output

High-Definition CRT Display, Video Output Applications Features • High breakdown voltage : VCEO≥300V. • Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. • Adoption of MBIT process.

NPN Epitaxial Silicon Transistor

Features • High Voltage : VCEO= 300V • Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SA1381/KSA1381. Applications • Audio, Voltage Amplifie

NPN Epitaxial Silicon Transistor

Features • High Voltage : VCEO= 300V • Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SA1381/KSA1381. Applications • Audio, Voltage Amplifie

NPN Epitaxial Silicon Transistor

Features • High Voltage : VCEO= 300V • Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SA1381/KSA1381. Applications • Audio, Voltage Amplifie

NPN Epitaxial Silicon Transistor

Features • High Voltage : VCEO= 300V • Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SA1381/KSA1381. Applications • Audio, Voltage Amplifie

NPN Epitaxial Silicon Transistor

Features • High Voltage : VCEO= 300V • Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SA1381/KSA1381. Applications • Audio, Voltage Amplifie

High-Definition CRT Display, Video Output Applications????

High-Definition CRT Display, Video Output Applications Features · High fT. · Small reverse transfer capacitance.

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage ,high reliability ·High speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage ,high reliability ·High speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High voltage ,high reliability ·High speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • High-speed switching • High collector-base voltage VCBO • Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS • For high-speed switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • High-speed switching • High collector-base voltage VCBO • Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS • For high-speed switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • High-speed switching • High collector-base voltage VCBO • Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS • For high-speed switching applications

Silicon NPN triple diffusion planar type(For high-speed switching)

Silicon NPN triple diffusion planar type For high-speed switching ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Satisfactory linearity of foward current transfer ratio hFE ● Full-pack package which can be installed to the heat sink with one screw

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

■ Features ● High-speed switching ● High collector to base voltage VCBO ● Satisfactory linearity of foward current transfer ratio hFE ● Full-pack package which can be installed to the heat sink with one screw

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PFa package ·High-speed switching ·High collector-base voltage VCBO ·Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS ·For high-speed switching applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PFa package ·High-speed switching ·High collector-base voltage VCBO ·Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS ·For high-speed switching applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PFa package ·High-speed switching ·High collector-base voltage VCBO ·Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS ·For high-speed switching applications

Silicon NPN Epitaxial

UHF/VHF wide band amplifier

Silicon NPN Epitaxial

Application UHF / VHF wide band amplifier

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise and High Gain NF = 1.6 dB TYP. @f = 900 MHz PG = 10.5 dB TYP. @f = 900 MHz APPLICATIONS • Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band.

Silicon NPN Epitaxial

Application UHF / VHF wide band amplifier

Silicon NPN Epitaxial

Application UHF / VHF wide band amplifier

Silicon NPN Epitaxial

Application UHF / VHF wide band amplifier

Silicon NPN Epitaxial

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isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1383 APPLICATIONS ·Adudio frequency power amplifier

PNP/NPN SILICON EPITAXIAL TRANSISTOR

PNP/NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier

NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)

HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

High Voltage Control Applications

Features • High Voltage: VCBO = 300V , VCEO = 300V • Low Saturation Voltage: VCE(sat) = 0.5V (max) • Small Collector Output Capacitance: Cob = 3pF(typ.) • PC = 1 to 2W (mounted on ceramic substrate) • Small Flat Package • Complementary to 2SA1384

NPN Silicon Epitaxia

Features ● Low VCE(sat). ● Fast switching speed. ● High DC current gain.

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. • Complement to 2SA1385-Z

SILICON POWER TRANSISTOR

DESCRIPTION The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. • Complement to 2SA1385-Z

isc Silicon NPN Power Transistor

DESCRIPTION • Low collector saturation voltage • High DC current gain • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • This transistor is ideal for audio frequency amplifier and switching especially in hybrid i

isc Silicon NPN Power Transistors

DESCRIPTION ·Collector-Emitter Breakdown Voltage V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A ·Good Linearity of hFE ·Complement to Type 2SA1386/A APPLICATIONS ·Designed for audio and general purpose applications

Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)

Complement to type 2SA1386/A Application : Audio and General Purpose External Dimensions MT-100(TO3P)

POWER TRANSISTORS(15A,130W)

HIGH-POWER NPN SILICON POWER TRANSISTORS 15 AMPERE SILICON POWER TRANSISTOR 160 -180 VOLTS 130 WATTS

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1386/A APPLICATIONS ·Audio and general purpose

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1386/A APPLICATIONS ·Audio and general purpose

POWER TRANSISTORS(15A,130W)

HIGH-POWER NPN SILICON POWER TRANSISTORS 15 AMPERE SILICON POWER TRANSISTOR 160 -180 VOLTS 130 WATTS

Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)

Complement to type 2SA1386/A Application : Audio and General Purpose External Dimensions MT-100(TO3P)

Silicon NPN Epitaxial Planar Transistor

Complement to type 2SA1386/A Application : Audio and General Purpose External Dimensions MT-100(TO3P)

Silicon NPN Epitaxial Planar Transistor

FEATURES ● Recommend for 105W high Fiderity audio frequency amplifier output stage ● Complement to type 2SA1386B & 2SA1386B-A APPLICATIONS ● Audio and general purpose

Silicon NPN epitaxial planer type(For display video output)

For display video output ■ Features ● High transition frequency fT. ● Small collector output capacitance Cob. ● Wide current range.

Silicon NPN epitaxial planer type(For display video output)

For display video output ■ Features ● High transition frequency fT. ● Small collector output capacitance Cob. ● Wide current range.

For Display Video Output

For display video output ■ Features ● High transition frequency fT. ● Small collector output capacitance Cob. ● Wide current range.

isc Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage ·High Collector Current ·Good Linearity of hFE APPLICATIONS ·Designed for switching regulator and high voltage switching applications.

isc Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage ·High Collector Current ·Good Linearity of hFE APPLICATIONS ·Designed for switching regulator and high voltage switching applications.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High collector current ·Low saturation voltage APPLICATIONS ·For high voltatge ,high speed power switching applications

Silicon NPN Power Transistors

DESCRIPTION With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complement to type 2SA1388 APPLICATIONS ·High current switching applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complement to type 2SA1388 APPLICATIONS ·High current switching applications

isc Silicon NPN RF Transistor

Silicon NPN RF Transistor DESCRIPTION ·Low Base Time Constant; rbb’ • CC = 5 ps TYP. ·High Gain Bandwidth Product fT= 2 GHz TYP. @ IE= 5mA, VCE= 10V ·Low Feedback Capacitance; Cre = 0.55 pF TYP. APPLICATIONS ·Designed for use as UHF oscillator and mixer in a tuner of a

isc Silicon NPN RF Transistor

DESCRIPTION ·Low Base Time Constant; rbb’ • CC = 4 ps TYP. ·High Gain Bandwidth Product fT= 2 GHz TYP. @ IE= -5mA, VCE= 10V ·Low Feedback Capacitance; Cre = 0.48 pF TYP. APPLICATIONS ·Designed for use as UHF oscillator and mixer in a tuner of a TV receiver.