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2SC35晶体管资料
2SC35别名：2SC35三极管、2SC35晶体管、2SC35晶体三极管
2SC35生产厂家：日本松下公司
2SC35制作材料：Ge-NPN
2SC35性质：低频或音频放大 （LF）_开关管 （S）
2SC35封装形式：直插封装
2SC35极限工作电压：20V
2SC35最大电流允许值：0.4A
2SC35最大工作频率：12MHZ
2SC35引脚数：3
2SC35最大耗散功率：0.14W
2SC35放大倍数：
2SC35图片代号：C-17
2SC35vtest：20
2SC35htest：12000000
- 2SC35atest：.4
2SC35wtest：.14
2SC35代换 2SC35用什么型号代替：AC127,ASY28,ASY29,ASY73,ASY74,ASY75,2N1303,3BX81B,
2SC35价格
参考价格：￥3.3854
型号：2SC3503CSTU 品牌：Fairchild 备注：这里有2SC35多少钱，2024年最近7天走势，今日出价，今日竞价，2SC35批发/采购报价，2SC35行情走势销售排行榜，2SC35报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Ultrahigh-DefinitionCRTDisplay,VideoOutputApplications??? Ultrahigh-DefinitionCRTDisplay,VideoOutputApplications Features •Highbreakdownvoltage:VCEO≥200V. •Smallreversetransfercapacitanceandexcellenthigh-frequnecycharacteristics:Cre=1.2pF(NPN),1.7pF(PNP),VCB=30V. •AdoptionofFBETprocess | SANYOSanyo 三洋三洋电机株式会社 |  |   | |
TransistorsforTVDisplayVideoOutputUse TransistorsforTVDisplayVideoOutputUse | SANYOSanyo 三洋三洋电机株式会社 | | | |
iscSiliconNPNPowerTransistor DESCRIPTION •Collector–EmitterBreakdownVoltage—:V(BR)CEO=200V •ComplementtoType2SA1380 APPLICATIONS •Designedforultrahigh-definitionCRTdisplay,videooutputapplicaitons | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
NPNEpitaxialSiliconTransistor Features •HighVoltage:VCEO=300V •LowReverseTransferCapacitance:Cre=1.8pFatVCB=30V •ExcellentGainLinearityforlowTHD •HighFrequency:150MHz •FullthermalandelectricalSpicemodelsareavailable •Complementto2SA1381/KSA1381. Applications •Audio,VoltageAmplifie | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
High-DefinitionCRTDisplay,VideoOutput High-DefinitionCRTDisplay,VideoOutputApplications Features •Highbreakdownvoltage:VCEO≥300V. •Smallreversetransfercapacitanceandexcellenthighfrequencycharacteristic:Cre=1.8pF(NPN),2.3pF(PNP),VCB=30V. •AdoptionofMBITprocess. | SANYOSanyo 三洋三洋电机株式会社 | | | |
TransistorsforTVDisplayVideoOutputUse TransistorsforTVDisplayVideoOutputUse | SANYOSanyo 三洋三洋电机株式会社 | | | |
NPNEpitaxialSiliconTransistor Features •HighVoltage:VCEO=300V •LowReverseTransferCapacitance:Cre=1.8pFatVCB=30V •ExcellentGainLinearityforlowTHD •HighFrequency:150MHz •FullthermalandelectricalSpicemodelsareavailable •Complementto2SA1381/KSA1381. Applications •Audio,VoltageAmplifie | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
NPNEpitaxialSiliconTransistor Features •HighVoltage:VCEO=300V •LowReverseTransferCapacitance:Cre=1.8pFatVCB=30V •ExcellentGainLinearityforlowTHD •HighFrequency:150MHz •FullthermalandelectricalSpicemodelsareavailable •Complementto2SA1381/KSA1381. Applications •Audio,VoltageAmplifie | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
NPNEpitaxialSiliconTransistor Features •HighVoltage:VCEO=300V •LowReverseTransferCapacitance:Cre=1.8pFatVCB=30V •ExcellentGainLinearityforlowTHD •HighFrequency:150MHz •FullthermalandelectricalSpicemodelsareavailable •Complementto2SA1381/KSA1381. Applications •Audio,VoltageAmplifie | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
NPNEpitaxialSiliconTransistor Features •HighVoltage:VCEO=300V •LowReverseTransferCapacitance:Cre=1.8pFatVCB=30V •ExcellentGainLinearityforlowTHD •HighFrequency:150MHz •FullthermalandelectricalSpicemodelsareavailable •Complementto2SA1381/KSA1381. Applications •Audio,VoltageAmplifie | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
TransistorsforTVDisplayVideoOutputUse TransistorsforTVDisplayVideoOutputUse | SANYOSanyo 三洋三洋电机株式会社 | | | |
High-DefinitionCRTDisplay,VideoOutputApplications???? High-DefinitionCRTDisplay,VideoOutputApplications Features ·HighfT. ·Smallreversetransfercapacitance. | SANYOSanyo 三洋三洋电机株式会社 | | | |
TRIPLEDIFFUSEDPLANERTYPEHIGHVOLTAGEHIGHSPEEDSWITCHING
| FujiFUJI CORPORATION 株式会社ＦＵＪＩ |  | | |
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Highvoltage,highreliability ·Highspeedswitching APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 |  | | |
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Highvoltage,highreliability ·Highspeedswitching APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Highvoltage,highreliability ·Highspeedswitching APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers | SAVANTIC Savantic, Inc. |  | | |
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •High-speedswitching •Highcollector-basevoltageVCBO •SatisfactorylinearityofforwardcurrenttransferratiohFE APPLICATIONS •Forhigh-speedswitchingapplications | SAVANTIC Savantic, Inc. | | | |
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •High-speedswitching •Highcollector-basevoltageVCBO •SatisfactorylinearityofforwardcurrenttransferratiohFE APPLICATIONS •Forhigh-speedswitchingapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •High-speedswitching •Highcollector-basevoltageVCBO •SatisfactorylinearityofforwardcurrenttransferratiohFE APPLICATIONS •Forhigh-speedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SiliconNPNtriplediffusionplanartype(Forhigh-speedswitching) SiliconNPNtriplediffusionplanartype Forhigh-speedswitching ■Features ●High-speedswitching ●HighcollectortobasevoltageVCBO ●SatisfactorylinearityoffowardcurrenttransferratiohFE ●Full-packpackagewhichcanbeinstalledtotheheatsinkwithonescrew | PanasonicPanasonic Corporation 松下松下电器 |  | | |
SiliconNPNtriplediffusionplanartype(Forhighbreakdownvoltagehigh-speedswitching) ■Features ●High-speedswitching ●HighcollectortobasevoltageVCBO ●SatisfactorylinearityoffowardcurrenttransferratiohFE ●Full-packpackagewhichcanbeinstalledtotheheatsinkwith onescrew | PanasonicPanasonic Corporation 松下松下电器 | | | |
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PFapackage ·High-speedswitching ·Highcollector-basevoltageVCBO ·SatisfactorylinearityofforwardcurrenttransferratiohFE APPLICATIONS ·Forhigh-speedswitchingapplications | SAVANTIC Savantic, Inc. | | | |
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PFapackage ·High-speedswitching ·Highcollector-basevoltageVCBO ·SatisfactorylinearityofforwardcurrenttransferratiohFE APPLICATIONS ·Forhigh-speedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PFapackage ·High-speedswitching ·Highcollector-basevoltageVCBO ·SatisfactorylinearityofforwardcurrenttransferratiohFE APPLICATIONS ·Forhigh-speedswitchingapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
SiliconNPNEpitaxial UHF/VHFwidebandamplifier | HitachiHitachi, Ltd. 日立公司 |  | | |
iscSiliconNPNRFTransistor DESCRIPTION •LowNoiseandHighGainNF=1.6dBTYP.@f=900MHzPG=10.5dBTYP.@f=900MHz APPLICATIONS •Designedforuseinlow-noiseandsmallsignalamplifiersfromVHF~UHFband. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SiliconNPNEpitaxial Application UHF/VHFwidebandamplifier | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
SiliconNPNEpitaxial Application UHF/VHFwidebandamplifier | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNPNEpitaxial Application UHF/VHFwidebandamplifier | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNPNEpitaxial Application UHF/VHFwidebandamplifier | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNPNEpitaxial ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | | |
iscSiliconNPNPowerTransistor DESCRIPTION ·HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=180V(Min) ·GoodLinearityofhFE ·ComplementtoType2SA1383 APPLICATIONS ·Adudiofrequencypoweramplifier | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PNP/NPNSILICONEPITAXIALTRANSISTOR PNP/NPNSiliconEpitaxialTransistor AudioFrequencyPowerAmplifier | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
NPNTRIPLEDIFFUSEDTYPE(HIGHVOLTAGECONTROL,PLASMADISPLAY,NIXIETUBEDRIVER,CATHODERAYTUBEBRIGHTNESSCONTROLAPPLICATIONS) HIGHVoltageControlApplications PlasmaDisplay,NixieTubeDriverApplications CathodeRayTubeBrightnessControlApplications •Highvoltage:VCBO=300V,VCEO=300V •Lowsaturationvoltage:VCE(sat)=0.5V(max) •Smallcollectoroutputcapacitance:Cob=3pF(typ.) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  | | |
HighVoltageControlApplications Features •HighVoltage:VCBO=300V,VCEO=300V •LowSaturationVoltage:VCE(sat)=0.5V(max) •SmallCollectorOutputCapacitance:Cob=3pF(typ.) •PC=1to2W(mountedonceramicsubstrate) •SmallFlatPackage •Complementaryto2SA1384 | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
iscSiliconNPNPowerTransistor DESCRIPTION •Lowcollectorsaturationvoltage •HighDCcurrentgain •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Thistransistorisidealforaudiofrequencyamplifierand switchingespeciallyinhybridi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
NPNSiliconEpitaxia Features ●LowVCE(sat). ●Fastswitchingspeed. ●HighDCcurrentgain. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
SILICONPOWERTRANSISTOR DESCRIPTION The2SC3518-ZisdesignedforAudioFrequencyAmplifierandSwitching,especiallyinHybridIntegratedCircuits. FEATURES •HighDCCurrentGainhFE=100to400 •LowVCE(sat):VCE(sat)=0.09VTYP. •Complementto2SA1385-Z | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPNSILICONEPITAXIALTRANSISTORMP-3 DESCRIPTION The2SC3518-ZisdesignedforAudioFrequencyAmplifierandSwitching,especiallyinHybridIntegratedCircuits. FEATURES •HighDCCurrentGainhFE=100to400 •LowVCE(sat):VCE(sat)=0.09VTYP. •Complementto2SA1385-Z | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
POWERTRANSISTORS(15A,130W) HIGH-POWERNPNSILICONPOWERTRANSISTORS 15AMPERESILICONPOWERTRANSISTOR160-180VOLTS130WATTS | MOSPEC MOSPEC |  | | |
SiliconNPNEpitaxialPlanarTransistor(AudioandGeneralPurpose) Complementtotype2SA1386/A Application:AudioandGeneralPurpose ExternalDimensionsMT-100(TO3P) | SankenSanken Electric Co Ltd. 三垦日本三垦 |  | | |
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Complementtotype2SA1386/A APPLICATIONS ·Audioandgeneralpurpose | SAVANTIC Savantic, Inc. | | | |
iscSiliconNPNPowerTransistors DESCRIPTION ·Collector-EmitterBreakdownVoltageV(BR)CEO=160V(Min)-2SC3519 =180V(Min)-2SC3519A ·GoodLinearityofhFE ·ComplementtoType2SA1386/A APPLICATIONS ·Designedforaudioandgeneralpurposeapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Complementtotype2SA1386/A APPLICATIONS ·Audioandgeneralpurpose | SAVANTIC Savantic, Inc. | | | |
SiliconNPNEpitaxialPlanarTransistor(AudioandGeneralPurpose) Complementtotype2SA1386/A Application:AudioandGeneralPurpose ExternalDimensionsMT-100(TO3P) | SankenSanken Electric Co Ltd. 三垦日本三垦 | | | |
POWERTRANSISTORS(15A,130W) HIGH-POWERNPNSILICONPOWERTRANSISTORS 15AMPERESILICONPOWERTRANSISTOR160-180VOLTS130WATTS | MOSPEC MOSPEC | | | |
SiliconNPNEpitaxialPlanarTransistor Complementtotype2SA1386/A Application:AudioandGeneralPurpose ExternalDimensionsMT-100(TO3P) | SankenSanken Electric Co Ltd. 三垦日本三垦 | | | |
SiliconNPNEpitaxialPlanarTransistor FEATURES ●Recommendfor105WhighFiderityaudiofrequencyamplifieroutputstage ●Complementtotype2SA1386B&2SA1386B-A APPLICATIONS ●Audioandgeneralpurpose | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 |  | | |
SiliconNPNepitaxialplanertype(Fordisplayvideooutput) Fordisplayvideooutput ■Features ●HightransitionfrequencyfT. ●SmallcollectoroutputcapacitanceCob. ●Widecurrentrange. | PanasonicPanasonic Corporation 松下松下电器 | | | |
SiliconNPNepitaxialplanertype(Fordisplayvideooutput) Fordisplayvideooutput ■Features ●HightransitionfrequencyfT. ●SmallcollectoroutputcapacitanceCob. ●Widecurrentrange. | PanasonicPanasonic Corporation 松下松下电器 | | | |
ForDisplayVideoOutput Fordisplayvideooutput ■Features ●HightransitionfrequencyfT. ●SmallcollectoroutputcapacitanceCob. ●Widecurrentrange. | PanasonicPanasonic Corporation 松下松下电器 | | | |
iscSiliconNPNPowerTransistor DESCRIPTION ·LowCollectorSaturationVoltage ·HighCollectorCurrent ·GoodLinearityofhFE APPLICATIONS ·Designedforswitchingregulatorandhighvoltageswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscSiliconNPNPowerTransistor DESCRIPTION ·LowCollectorSaturationVoltage ·HighCollectorCurrent ·GoodLinearityofhFE APPLICATIONS ·Designedforswitchingregulatorandhighvoltageswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·Highcollectorcurrent ·Lowsaturationvoltage APPLICATIONS ·Forhighvoltatge,highspeedpowerswitchingapplications | SAVANTIC Savantic, Inc. | | | |
SiliconNPNPowerTransistors DESCRIPTION WithTO-220Fapackage ·Lowcollectorsaturationvoltage ·Highspeedswitchingtime ·Complementtotype2SA1388 APPLICATIONS ·Highcurrentswitchingapplications | SAVANTIC Savantic, Inc. | | | |
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·Lowcollectorsaturationvoltage ·Highspeedswitchingtime ·Complementtotype2SA1388 APPLICATIONS ·Highcurrentswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscSiliconNPNRFTransistor SiliconNPNRFTransistor DESCRIPTION ·LowBaseTimeConstant;rbb’•CC=5psTYP. ·HighGainBandwidthProductfT=2GHzTYP.@IE=5mA,VCE=10V ·LowFeedbackCapacitance;Cre=0.55pFTYP. APPLICATIONS ·DesignedforuseasUHFoscillatorandmixerinatunerofa | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscSiliconNPNRFTransistor DESCRIPTION ·LowBaseTimeConstant; rbb’•CC=4psTYP. ·HighGainBandwidthProduct fT=2GHzTYP.@IE=-5mA,VCE=10V ·LowFeedbackCapacitance; Cre=0.48pFTYP. APPLICATIONS ·DesignedforuseasUHFoscillatorandmixerinatunerofaTVreceiver. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
NPNSiliconEpitaxialTransistor NPNSiliconEpitaxialTransistor Features HighGainBandwidthProcuct;fT=2000MHzTYP. LowCollectortoBaseTimeConstant;CCrb’b=4psTYP. LowFeedbackCapacitance;Cre=0.48pFTYP. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | |
2SC35产品属性
- 类型
描述
- 型号
2SC35
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-92
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC/Renesas Electronics Americ |
21+ |
SOT-23 |
5765 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
00+ |
SOT-23 |
5765 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
24+ |
SOT23-3 |
880000 |
明嘉莱只做原装正品现货 |
|||
NEC |
22+ |
SOT-23 |
600000 |
航宇科工半导体-央企优秀战略合作伙伴! |
|||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
NEC |
23+ |
SOT-23 |
31000 |
全新原装现货 |
|||
NEC |
23+ |
NA/ |
18000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
22+23+ |
Sot-23 |
34238 |
绝对原装正品全新进口深圳现货 |
|||
NEC |
2008++ |
SOT-23 |
36030 |
新进库存/原装 |
|||
RENESAS/瑞萨 |
SOT23 |
7906200 |
2SC35芯片相关品牌
2SC35规格书下载地址
2SC35参数引脚图相关
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- 2SC3475
- 2SC3474
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- 2SC3468
- 2SC3467
- 2SC3466
- 2SC3465
- 2SC3462
2SC35数据表相关新闻
2SC2712G-SOT23.3R-Y-TG
2SC2712G-SOT23.3R-Y-TG
2023-1-312SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取.QQ：1755232575/QQ：1157611585，微信号:87680558.
2021-3-232SC380TM-O
只做原装假一赔十
2020-11-142SC3671-B,T2F(J
产品属性属性值搜索类似 制造商:Toshiba 产品种类:双极晶体管-双极结型晶体管(BJT) 系列:2SC3671 技术:Si 商标:Toshiba 产品类型:BJTs-BipolarTransistors 子类别:Transistors
2020-11-52SC3998中文资料
2SC3998中文资料
2019-2-182SC2859中文资料
2SC2859中文资料
2019-2-18
DdatasheetPDF页码索引
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