2SC342晶体管资料

  • 2SC342别名:2SC342三极管、2SC342晶体管、2SC342晶体三极管

  • 2SC342生产厂家:日本冲电气工业股份公司

  • 2SC342制作材料:Si-NPN

  • 2SC342性质:微型 (Min)_通用型 (Uni)

  • 2SC342封装形式:贴片封装

  • 2SC342极限工作电压:110V

  • 2SC342最大电流允许值:0.02A

  • 2SC342最大工作频率:130MHZ

  • 2SC342引脚数:3

  • 2SC342最大耗散功率:0.1W

  • 2SC342放大倍数

  • 2SC342图片代号:G-9

  • 2SC342vtest:110

  • 2SC342htest:130000000

  • 2SC342atest:0.02

  • 2SC342wtest:0.1

  • 2SC342代换 2SC342用什么型号代替:BF297,BFT57,BFR86,BSS38,BSV29,BSX21,2N5550,2SC1775A,2SC1845,2SC2240,2SC3245,3DG160C,

型号 功能描述 生产厂家&企业 LOGO 操作

NPNEPITAXIALTYPE(STOROBOFLASH,MEDIUMPOWERAMPLIFIERAPPLICATIONS)

StrobeFlashApplications AudioPowerAmplifierApplications •HighDCcurrentgain:hFE=140to600(VCE=2V,IC=0.5A) :hFE=70(min)(VCE=2V,IC=4A) •Lowsaturationvoltage:VCE(sat)=1.0V(max)(IC=4A,IB=0.1A) •Highcollec

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·HighDCcurrentgain ·Lowsaturationvoltage ·Highcollectorpowerdissipation APPLICATIONS ·Storoboflashapplications ·Mediumpoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·HighDCcurrentgain ·Lowsaturationvoltage ·Highcollectorpowerdissipation APPLICATIONS ·Storoboflashapplications ·Mediumpoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·HighDCcurrentgain ·Lowsaturationvoltage ·Highcollectorpowerdissipation APPLICATIONS ·Storoboflashapplications ·Mediumpoweramplifierapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighCollector-EmitterBreakdownVoltage:V(BR)CEO=120V(Min) ·ComplementtoType2SA1358 APPLICATIONS ·Designedforaudiofrequencypoweramplifierapplications. ·Suitablefordriverof60to80Wattsaudioamplifier.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNEPITAXIALTYPE(AUDIOFREQUENCYPOWERAMPLIFIERAPPLICATIONS)

AudioFrequencyPowerAmplifierApplications •Complementaryto2SA1358 •Suitablefordriverof60to80wattsaudioamplifier •Highbreakdownvoltage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALTYPE(AUDIOFREQUENCYAMPLIFIERAPPLICATIONS)

AudioFrequencyAmplifierApplications •Complementaryto2SA1360 •Smallcollectoroutputcapacitance:Cob=1.8pF(typ.) •Hightransitionfrequency:fT=200MHz(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •Complementtotype2SA1360 •Hightransitionfrequency APPLICATIONS •Audiofrequencyamplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •Complementtotype2SA1360 •Hightransitionfrequency APPLICATIONS •Audiofrequencyamplifierapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

AudioFrequencyAmplifierApplications

AudioFrequencyAmplifierApplications •Complementaryto2SA1360 •Smallcollectoroutputcapacitance:Cob=1.8pF(typ.) •Hightransitionfrequency:fT=200MHz(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •Complementtotype2SA1360 •Hightransitionfrequency APPLICATIONS •Audiofrequencyamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AudioFrequencyAmplifierApplications

AudioFrequencyAmplifierApplications •Complementaryto2SA1360 •Smallcollectoroutputcapacitance:Cob=1.8pF(typ.) •Hightransitionfrequency:fT=200MHz(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyAmplifierApplications

AudioFrequencyAmplifierApplications •Complementaryto2SA1360 •Smallcollectoroutputcapacitance:Cob=1.8pF(typ.) •Hightransitionfrequency:fT=200MHz(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyAmplifierApplications

AudioFrequencyAmplifierApplications •Complementaryto2SA1360 •Smallcollectoroutputcapacitance:Cob=1.8pF(typ.) •Hightransitionfrequency:fT=200MHz(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

TRANSISTORSILICONNPNDIFFUSEDTYPE(PCTPROCESS)

SwitchingRegulatorandHigh-VoltageSwitchingApplications High-SpeedDC-DCConverterApplications •Excellentswitchingtimes:tr=1.0μs(max) tf=1.5μs(max),(IC=0.5A) •Highbreakdownvoltage:VCEO=400V

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage- :VCEO=400V(Min) ·ComplementtothePNP2SA1924 ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforhighvoltageandgeneralpurposeapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNEpitaxialPlanarType

Features •LowNoiseFigure •NF=1.5dB,|S21e|2=16dB(f=500MHz) •NF=1.5dB,|S21e|2=10.5dB(f=1GHz)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

Plastic-EncapsulatedTransistors

文件:56.09 Kbytes Page:1 Pages

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL

SiliconNPNEpitaxialType(PCTProcess)StrobeFlashApplications

文件:124 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistors

文件:144.42 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

TRANSISTOR(NPN)

文件:102.13 Kbytes Page:1 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳深圳市永而佳实业有限公司

WINNERJOIN

SiliconNPNtransistorinaTO-126FPlasticPackage.

文件:742.31 Kbytes Page:6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

SiliconNPNEpitaxialType(PCTProcess)StrobeFlashApplications

文件:124 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistors

文件:201.18 Kbytes Page:4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

文件:201.18 Kbytes Page:4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNtransistorinaTO-126FPlasticPackage.

文件:1.01875 Mbytes Page:6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

SiliconNPNEpitaxialType(PCTProcess)AudioFrequencyPowerAmplifierApplications

文件:120.53 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialType(PCTProcess)AudioFrequencyPowerAmplifierApplications

文件:120.53 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALTYPE(AUDIOFREQUENCYPOWERAMPLIFIER,LOWSPEEDSWITCHING)

文件:151.39 Kbytes Page:2 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

GoodLinearityofhFE

文件:184.46 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNtransistorinaTO-126FPlasticPackage.

文件:423.82 Kbytes Page:6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

SiliconNPNEpitaxialType(PCTProcess)AudioFrequencyPowerAmplifier

文件:120.88 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialType(PCTProcess)AudioFrequencyAmplifierApplications

文件:125.56 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistors

文件:143.06 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNEpitaxialType(PCTProcess)AudioFrequencyAmplifierApplications

文件:125.56 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNPowerTransistors

文件:202.86 Kbytes Page:4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

文件:202.86 Kbytes Page:4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

ComplementtoType2SA1361

文件:176.06 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNTripleDiffusedType(PCTProcess)

文件:177.34 Kbytes Page:6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNTripleDiffusedType(PCTProcess)

文件:177.34 Kbytes Page:6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALPLANARTYPE(VHF~UHFBANDLOWNOISEAMPLIFIERAPPLICATIONS)

文件:209.17 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

2SC342产品属性

  • 类型

    描述

  • 型号

    2SC342

  • 制造商

    Toshiba America Electronic Components

  • 功能描述

    Trans GP BJT NPN 20V 5A 3-Pin TO-126IS

更新时间:2025-7-20 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
韩国太虹
24+
NA/
12023
优势代理渠道,原装正品,可全系列订货开增值税票
TOS
1738+
TO-126F
8529
科恒伟业!只做原装正品,假一赔十!
TOSHIBA/东芝
22+
TO126
100000
代理渠道/只做原装/可含税
TOSHIBA
25+23+
TO-126
42309
绝对原装正品全新进口深圳现货
TOSHIBA
23+
TO-126
9526
TOSHIBA/东芝
2024
TO-126F
503139
16余年资质 绝对原盒原盘代理渠道 更多数量
TOSHIBA/东芝
25+
NA
880000
明嘉莱只做原装正品现货
TOSHIBA
24+
TO-126F
6300
Toohong
24+
TO-126
9000
只做原装正品 有挂有货 假一赔十
TOSHIBA/东芝
2447
TO-126F
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

2SC342芯片相关品牌

  • AAC
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  • RECOM
  • SIEMENS
  • WILLOW

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