2SC33晶体管资料
2SC33别名:2SC33三极管、2SC33晶体管、2SC33晶体三极管
2SC33生产厂家:日本日电公司
2SC33制作材料:Si-NPN
2SC33性质:射频/高频放大 (HF)
2SC33封装形式:直插封装
2SC33极限工作电压:45V
2SC33最大电流允许值:0.05A
2SC33最大工作频率:250MHZ
2SC33引脚数:3
2SC33最大耗散功率:
2SC33放大倍数:
2SC33图片代号:D-13
2SC33vtest:45
2SC33htest:250000000
- 2SC33atest:0.05
2SC33wtest:0
2SC33代换 2SC33用什么型号代替:BC107,BC171,BC183,BC207,BC237,BC382,BC547,BC582,BF184,BF185,BF240,BF241,BF254,BF255,2N2220,2N2221`,2N2222,3DG111F,
2SC33价格
参考价格:¥0.6062
型号:2SC33120RA 品牌:Panasonic 备注:这里有2SC33多少钱,2026年最近7天走势,今日出价,今日竞价,2SC33批发/采购报价,2SC33行情走势销售排行榜,2SC33报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) • Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 5A APPLICATIONS • Designed for DC-DC converter, emergency lighting inverter and general purpose applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Low saturation voltage ·Wide area of safe operation APPLICATIONS ·Power and general purpose application | SAVANTIC | |||
SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. FEATURES . NF=1.7dB, lS21el 2=14.5dB (f=500MHz) . NF=2.3dB, lS21el 2=9dB (f=1000MHz) | TOSHIBA 东芝 | |||
TRANSISTOR 3SK121 datasheet pdf | TOSHIBA 东芝 | |||
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS | TOSHIBA 东芝 | |||
NPN EPITAXIAL TYPE (HIGH CURRENT SWITCING APPLICATIONS) High Current Switching Applications DC-DC Converter Applications • Low collector saturation voltage: VCE (sat)= 0.4 V (max) (IC= 3 A) • High speed switching time: tstg= 1.0 µs (typ.) | TOSHIBA 东芝 | |||
丝印代码:C3303;Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
5A , 100V NPN Epitaxial Planar Silicon Transistor FEATURES • Low Collector-to-Emitter Saturation Voltage • Excllent Linearity of hFE • High fT • Fast Switching Time | SECOS 喜可士 | |||
5A , 100V NPN Epitaxial Planar Silicon Transistor FEATURES • Low Collector-to-Emitter Saturation Voltage • Excllent Linearity of hFE • High fT • Fast Switching Time | SECOS 喜可士 | |||
5A , 100V NPN Epitaxial Planar Silicon Transistor FEATURES • Low Collector-to-Emitter Saturation Voltage • Excllent Linearity of hFE • High fT • Fast Switching Time | SECOS 喜可士 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Fast switching times APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications | SAVANTIC | |||
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATION) 1. Switching regulator and High voltage Switching Applications. 2. High Speed DC-DC Conveter Applications. | TOSHIBA 东芝 | |||
POWER TRANSISTORS(10A,400V,100W) SWITCHMODE SERIES NPN POWER TRANSISTORS | MOSPEC 统懋 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Fast switching times APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Excellent switching times :tr=1.0μs(Max .),tf=1.0μs(Max .)(IC=5A) ·High collector breakdown voltage : VCEO=800V APPLICATIONS ·High speed,high voltage switching applications ·Switching regulator applications ·High speed DC-DC converter | ISC 无锡固电 | |||
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, HIGH SPEED DC-DC CONVERTER APPLICATIONS) High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications • Excellent switching times: tr= 1.0 μs (max), tf= 1.0 μs (max) (IC= 5 A) • High collector breakdown voltage: VCEO= 800 V | TOSHIBA 东芝 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Excellent switching times :tr=1.0µs(Max .),tf=1.0µs(Max .)(IC=5A) ·High collector breakdown voltage : VCEO=800V APPLICATIONS ·High speed,high voltage switching applications ·Switching regulator applications ·High speed DC-DC converter | SAVANTIC | |||
HIGH CURRENT SWITCHING APPLICATIONS. FEATURES: -Low Collector Saturation Voltage : VCE (sat)=0.4V (Max.) at Ic=3A -High Speed Switching Time: 'tstg-1.0ms (Typ.) -Complementary to 2SA1308. | TOSHIBA 东芝 | |||
SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. | TOSHIBA 东芝 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulators and high voltage switching applications ·High speed DC-DC converter application | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) • High Switching Speed APPLICATIONS • Switching regulator and high voltage switching applications. • High speed DC-DC converter applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulators and high voltage switching applications ·High speed DC-DC converter application | SAVANTIC | |||
Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage- V(BR)CEO=400V(Min) • High Switching Speed APPLICATIONS • Switching regulator and high voltage switching applications • High speed DC-DC converter applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • High collector breakdown voltage • Excellent Switching times APPLICATIONS • Switching regulator • High speed DC-DC converter • High voltage switching | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • High collector breakdown voltage • Excellent Switching times APPLICATIONS • Switching regulator • High speed DC-DC converter • High voltage switching | ISC 无锡固电 | |||
SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. | TOSHIBA 东芝 | |||
Silicon NPN epitaxial planer type(For low-frequency amplification) Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SA1309A ■Features ● Optimum for high-density mounting. ● Allowing supply with the radial taping. | PANASONIC 松下 | |||
TO-92S Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Optimum for High-density Mounting ● Allowing Supply with the Radial Taping ● Complementary to 2SA1309A | JIANGSU 长电科技 | |||
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) For low-frequency and low-noise amplification Complementary to 2SA1310 ■ Features ● Optimum for high-density mounting. ● Allowing supply with the radial taping. ● Low noise voltage NV. | PANASONIC 松下 | |||
Silicon NPN epitaxial planer type(Silicon NPN epitaxial planer type) Silicon NPN epitaxial planer type For high-frequency amplification ■ Features ● Optimum for high-density mounting. ● Allowing supply with the radial taping. ● Optimum for RF amplification of FM/AM radios. | PANASONIC 松下 | |||
Silicon NPN epitaxial planer type(For high-frequency amplification) Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1323 ■ Features ● Optimum for high-density mounting. ● Allowing supply with the radial taping. ● Optimum for RF amplification of FM/AM radios. ● High transition frequency fT. | PANASONIC 松下 | |||
Silicon NPN epitaxial planer type(For high-frequency amplification) For high-frequency amplification ■ Features ● Optimum for high-density mounting. ● Allowing supply with the radial taping. ● Optimum for RF amplification of FM/AM radios. ● High transition frequency fT. | PANASONIC 松下 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High voltage,high speed switching • High reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers | ISC 无锡固电 | |||
High speed switching transistor [COLLMER SEMICONDUCTOR] High speed switching transistor | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SUPER HIGH SPEED SWITCHING TRANSISTORS [Collmer] Super high speed switching transistors ● Suitable for 100kHz class switching regulators High speed switching transistors for ringing choke coverter ● The DC current gain is high. (min. 20) ● High speed switching performance Large SOA switching transistors ● An especially wide SOA | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High voltage,high speed switching • High reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers | SAVANTIC | |||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= 400V(Min) • Fast Switching Speed APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • High voltage ,high speed switching • High reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers | SAVANTIC | |||
SUPER HIGH SPEED SWITCHING TRANSISTORS [Collmer] Super high speed switching transistors ● Suitable for 100kHz class switching regulators High speed switching transistors for ringing choke coverter ● The DC current gain is high. (min. 20) ● High speed switching performance Large SOA switching transistors ● An especially wide SOA | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
High speed switching transistor [COLLMER SEMICONDUCTOR] High speed switching transistor | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING Features ● High voltage, High speed switching ● High reliability Applications ● Switching regulators ● Ultrasonic generators ● High frequency inverters ● General purpose power amplifiers | FUJI 富士通 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • High voltage ,high speed switching • High reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers | ISC 无锡固电 | |||
High speed switching transistor [COLLMER SEMICONDUCTOR] High speed switching transistor | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SUPER HIGH SPEED SWITCHING TRANSISTORS [Collmer] Super high speed switching transistors ● Suitable for 100kHz class switching regulators High speed switching transistors for ringing choke coverter ● The DC current gain is high. (min. 20) ● High speed switching performance Large SOA switching transistors ● An especially wide SOA | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SUPER HIGH SPEED SWITCHING TRANSISTORS [Collmer] Super high speed switching transistors ● Suitable for 100kHz class switching regulators High speed switching transistors for ringing choke coverter ● The DC current gain is high. (min. 20) ● High speed switching performance Large SOA switching transistors ● An especially wide SOA | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
High speed switching transistor [COLLMER SEMICONDUCTOR] High speed switching transistor | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers | ISC 无锡固电 | |||
HIGH VOLTAGE HIGH SPEED SWITCHING HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability | UTC 友顺 | |||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers | SAVANTIC | |||
Silicon NPN triple diffusion planar transistor FEATURES • High-speed switching • High collector to base voltage, VCBO • Satisfactory linearity of foward current transfer ratio hFE • TO-3P package which can be installed to the heat sink with one screw APPLICATIONS • Switching regulator and general purpose • Ultrasonic gen | NELLSEMI 尼尔半导体 | |||
HIGH VOLTAGE HIGH SPEED SWITCHING HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability | UTC 友顺 | |||
HIGH VOLTAGE HIGH SPEED SWITCHING HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability | UTC 友顺 | |||
High speed switching transistor [COLLMER SEMICONDUCTOR] High speed switching transistor | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SUPER HIGH SPEED SWITCHING TRANSISTORS [Collmer] Super high speed switching transistors ● Suitable for 100kHz class switching regulators High speed switching transistors for ringing choke coverter ● The DC current gain is high. (min. 20) ● High speed switching performance Large SOA switching transistors ● An especially wide SOA | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Power Bipolar Transistors
| ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3P(I) package • High voltage • High speed APPLICATIONS • High power switching applications | ISC 无锡固电 | |||
Silicon NPN Triple Diffused Application High voltage, high speed and high power switching | HITACHIHitachi Semiconductor 日立日立公司 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3P(I) package • High voltage • High speed APPLICATIONS • High power switching applications | SAVANTIC | |||
Audio Frequency Low Noise Amplifier Applications Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) • Complementary to 2SA1312 • Small package | TOSHIBA 东芝 |
2SC33产品属性
- 类型
描述
- Polarity:
NPN
- Features:
Low Satulation Voltage
- VCEO(Max)(V):
80
- IC(Max)(A):
5
- hFE(Min):
70
- hFE(Max):
240
- VCE(sat)(Max)(V):
0.4
- fT(Typ.)(MHz):
120
- Comments:
Rank is specified by hFE range.
- Number of pins:
3
- Surface mount package:
Y
- Package name:
New PW-Mold
- Width×Length×Height(mm):
6.5 x 9.5 x 2.3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
23+ |
SOT23/SC59 |
250000 |
##公司100%原装现货,假一罚十!可含税13%免费提供样 |
|||
UTC(友顺) |
24+/25+ |
SOT-23 |
3000 |
UTC原厂一级代理商,价格优势! |
|||
NEC |
2019+PB |
SOT-23 |
15000 |
原装正品 可含税交易 |
|||
Renesas |
21+ |
- |
7 |
全新原装鄙视假货 |
|||
Renesas(瑞萨) |
24+ |
标准封装 |
37048 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ROHM |
25+ |
SMD |
20000 |
专做罗姆,一系列可以订货排单,只做原装正品假一罚十 |
|||
RENESAS/瑞萨 |
2019+ |
SC59 |
78550 |
原厂渠道 可含税出货 |
|||
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
NEC |
25+ |
SOT23 |
6500 |
十七年专营原装现货一手货源,样品免费送 |
|||
NEC |
10+ |
SOT-23 |
635 |
优势现货 |
2SC33规格书下载地址
2SC33参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SC3326
- 2SC3325
- 2SC3324
- 2SC3322
- 2SC3321
- 2SC3320
- 2SC3319
- 2SC3318
- 2SC3317
- 2SC3316
- 2SC3315
- 2SC3314
- 2SC3313
- 2SC3312
- 2SC3311(A)
- 2SC3311
- 2SC3310
- 2SC331
- 2SC3309
- 2SC3308
- 2SC3307
- 2SC3306
- 2SC3305
- 2SC3304
- 2SC3303
- 2SC3302
- 2SC3301
- 2SC3300
- 2SC330
- 2SC3299
- 2SC3298(B)
- 2SC3298(A)
- 2SC3298
- 2SC3297
- 2SC3296
- 2SC3295
- 2SC3294
- 2SC3293
- 2SC3292
- 2SC3291
- 2SC3290
- 2SC329
- 2SC3289
- 2SC3288
- 2SC3287
- 2SC3286
- 2SC3285
- 2SC3284
- 2SC3283(A)
- 2SC3281
- 2SC3280
- 2SC3279
- 2SC3277
- 2SC3272
- 2SC3269
- 2SC3268
- 2SC3267
- 2SC3266
- 2SC3265
2SC33数据表相关新闻
2SC2712G-SOT23.3R-Y-TG
2SC2712G-SOT23.3R-Y-TG
2023-1-312SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.
2021-3-232SC380TM-O
只做原装假一赔十
2020-11-142SC3671-B,T2F(J
产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
2020-11-52SC2334中文资料
2SC2334中文资料
2019-2-182SC2859中文资料
2SC2859中文资料
2019-2-18
DdatasheetPDF页码索引
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