NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent hFElinearity : hFE (1)= 140~600 (VCE= 1 V, IC= 0.5 A) : hFE (2)= 70 (min), 200 (typ.) (VCE= 1 V, IC= 2 A) • Low saturation voltage: VCE (sat)= 0.5 V (max) (IC= 2 A, IB= 50

NPN Transistor Plastic-Encapsulate Transistors

FEATURES High DC current gain and excellent hFElinearity. Low saturation voltage.

Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications

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NPN Plastic Encapsulated Transistor

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NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.