NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers applications in UHF band. APPLICATIONS For output stage of 50W power amplifiers in UHF band.

RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE

DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers applications in UHF band. APPLICATIONS For output stage of 50W power amplifiers in UHF band.

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC3103 is a silicon NPN epitaxial planar type transistor specifically designed for UHF power amplifier applications. APPLICATION For drive stage of 5W power amplifiers and output stage of up to 2W power amplifiers in UHF band portable type radio sets.

Si NPN Epitaxial Planar

Si NPN Epitaxial Planar RF Wide band Low-noise Amplifier

isc Silicon NPN RF Transistor

Silicon NPN RF Transistor DESCRIPTION ·Low Noise ·High Gain ·High Current-Gain Bandwidth Product APPLICATIONS ·Designed for use in RF wide band low noise amplifier.

TRANSISTOR (FOR AUDIO AMPLIFIER AND SWITCHING APPLICATIONS)

For Audio Amplifier and Switching Applications • High DC current gain: hFE= 600~3600 • High breakdown voltage: VCEO= 50 V • High collector current: IC= 150 mA (max)

MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

TRANSISTOR (FOR AUDIO AMPLFIER AND SWITCHING APPLICATIONS)

For Audio Amplifier and Switching Applications • High DC current gain: hFE = 600~3600 • High breakdown voltage: VCEO = 50 V • High collector current: IC = 150 mA (max) • Small package

High-VEBO,AF Amp Applications

High-VEBO, AF Amp Applications Features · High VEBO. · Wide ASO and highly resistant to breakdown.

TO-92 Plastic Package Transistors (NPN)

TO-92 Plastic Package Transistors(NPN)

TO-92 Plastic Package Transistors (NPN)

TO-92 Plastic Package Transistors(NPN)

TO-92 Plastic Package Transistors (NPN)

TO-92 Plastic Package Transistors(NPN)

TO-92 Plastic Package Transistors (NPN)

TO-92 Plastic Package Transistors(NPN)

TO-92 Plastic Package Transistors (NPN)

TO-92 Plastic Package Transistors(NPN)

160V/700mA Switching Applications

Features · High breakdown voltage. · Large current capacity. · Using MBIT process

160V/700mA Switching Applications

160V/700mA switching application Uses · Color TV sound output, converters, inverters Features · High breakdown voltage. · Large current capacity. · Using MBIT process

160V/1.5A Switching Applications

160V/1.5A Switching Applications Uses · Color TV sound output, converters, inverters. Features · High breakdown voltage. · Large current capacity. · Adoption of MBIT process.

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.45V(Max) @IC=0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier,high speed switching

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA1249 ·High breakdown voltage ·Large current capacity APPLICATIONS ·Color TV sound output;converters; Inverters’ applications ·160V/1.5A switching applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA1249 ·High breakdown voltage ·Large current capacity APPLICATIONS ·Color TV sound output;converters; Inverters’ applications ·160V/1.5A switching applications

Silicon NPN Epitaxial

Silicon NPN Epitaxial)

TRANSISTOR (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS)

TV Tuner, UHF Mixer Applications VHF~UHF Band RF Amplifier Applications

TRANSISTOR (TV TUNER, UHF OSCILLATOR, CONVERTER APPLICATIONS)(COMMON BASE)

TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base) • High transition frequency: fT= 1500 MHz (typ.) • Excellent linearity

isc Silicon NPN RF Transistor

DESCRIPTION • High Gain Bandwidth Product fT = 1500 MHz TYP. • Excellent Linearity APPLICATIONS • TV tuner, UHF oscillator applications. • TV tuner, UHF converter applications.

Silicon NPN Epitaxial

Silicon NPN Epitaxial Features ● High Transition Frequency :fT=1500MHz (Typ.) ● Exellent Linearity

Silicon NPN Epitaxial

Features ● High Gain: Gpe=24dB(Typ.)(f=200MHz) ● Low Noise :NF=2.0dB(Typ.)(f=200MHZ) ● Excellent Forward AGC Characteristics

isc Silicon NPN RF Transistor

DESCRIPTION ·High Gain- : Gpe= 24dB TYP. @ f= 200MHz ·Low Noise- : NF= 2.0dB TYP. @ f= 200MHz APPLICATIONS ·Designed for TV VHF RF amplifier applications.

TRANSISTOR (TV VHF RF AMPLIFIER APPLICATIONS)

TV VHF RF Amplifier Applications • High gain: Gpe = 24dB (typ.) (f = 200 MHz) • Low noise: NF = 2.0dB (typ.) (f = 200 MHz) • Excellent forward AGC characteristics

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

NPN EPITAXIAL PLANAR TYPE(TV VHF MIXER APPLICATIONS)

TV VHF Mixer Applications • High conversion gain: Gce = 23dB (typ.) • Low reverse transfer capacitance: Cre = 0.4 pF (typ.)

isc Silicon NPN RF Transistor

DESCRIPTION ·High Conversion Gain Gce = 23dB TYP. ·Low Reverse Transfer Capacitance Cre = 0.4pF TYP. APPLICATIONS ·Designed for TV VHF mixer applications.

Silicon NPN Epitaxial

Features • High Conversion Gain :Gce=23dB(TYP.) • Low Reverse Transfer Capacitance : Cre=0.4F(TYP.)

Silicon NPN Epitaxial

Silicon NPN Epitaxial

isc Silicon NPN RF Transistor

DESCRIPTION ·High Gain Bandwidth Product fT= 1100 MHz TYP. APPLICATIONS ·Designed for TV tuner ,VHF oscillator applications.

NPN EPITAXIAL PLANAR TYPE (TV TUNER, VHF OSCILLATOR APPLICATIONS)

TV Tuner, VHF Oscillator Applications

isc Silicon NPN RF Transistor

DESCRIPTION ·Good Linearity of fT APPLICATIONS ·Designed for TV Final Picture IF amplifier applications.

isc Silicon NPN RF Transistor

DESCRIPTION ·Low Noise and High Gain NF = 2.2 dB TYP. @VCE = 5 V, IC = 5 mA, f = 900 MHz PG = 10.5 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band.

Silicon NPN Epitaxial

UHF/VHF wide band amplifier

Silicon NPN Epitaxial

UHF/VHF wide band amplifier

Silicon NPN Transistor VHF-UHF Amplifier, Mixer/Osc

Features: ● High Current Gain-Bandwidth Product: fT = 600MHz (Min) @ f = 100MHz ● Low Output Capacitance: COB = 1.7pF (Max) @ VCB = 10V

Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)

Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing ■ Features • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob and reverse transfer capacitance (Common emitter) Crb • Mini type package, allowing down

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC3033 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF mobile radio applications. APPLICATIONs 10 watts output power amplifiers in HF band SSB mobile radio application.

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2SC3133is Designed for RF Power amplifiers in HF band mobile radio Applications.

For AF Applications

F for AF Applications Features • High VEBO. • Wide ASO and high durability against breakdown.

High-hFE,AF Amp Applications

High-hFE, AF Amp Applications Features • High VEBO. • Wide ASO and high durability against breakdown.

SILICON NPN EPITAXIAL PLANAR TYPE

TV VHF MIXER APPLICATIONS. FEATURES . High Conversion Gain : Gce=23dB (Typ.) . Low Reverse Transfer Capacitance : C re=0.4pF (Typ .)

TRANSISTOR

3SK121 datasheet pdf

NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING APPLICATIONS)

High Voltage Amplifier Applications High Voltage Switching Applications • High voltage: VCBO = 200 V (max) VCEO = 200 V (max) • Small flat package • Complementary to 2SA1255

Silicon NPN Triple Diffused Type

Silicon NPN Triple Diffused Type Features High voltage. VCBO= 200 V (max) VCEO= 200 V (max) Small flat package.

SOT-23-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE ● Low current(max.50 mA) ● High voltage(max.200V ) ● Telephony and professional communication equipment.

Bipolar Transistor

Bipolar Transistor (–)160V, (–)0.7A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • Co

High-Frequency General-Purpose Amp Applications????

High-Frequency General-Purpose Amplifier Applications Features • FBET series. • Compact package enabling compactness of sets. • High fT and small cre (fT=750MHz typ, cre=0.6 typ).

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High fT. Applications High frequency general-purpose amplifier applications.

High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications

High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Features • Very small-sized package permitting the 2SA1257/2SC3143-applied sets to be made small and slim. • High breakdown voltage (VCEO≥160V). • Small output capacitance.

NPN Epitaxial Planar Silicon Transistor

■ Features ● High breakdown voltage ● Small output capacitance. ● Complementary to 2SA1257

Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) • High DC Current Gain : hFE=2000(Min)@lc=1.5A • Wide Area of Safe Operation • Complement to Type 2SA1258 APPLICATIONS • Designed for high-speed drivers applications.

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-220C package • High switching speed • High DC current gain • Wide area of safe operation • Complement to type 2SA1258 APPLICATIONS • 60V/3A for High-Speed Drivers Applications

60V/3A for High-Speed Drivers Applications

60V/3A for High-Speed Drivers Applications Features · High fT. · High switching speed. · Wide ASO.

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-220C package • High switching speed • High DC current gain • Wide area of safe operation • Complement to type 2SA1258 APPLICATIONS • 60V/3A for High-Speed Drivers Applications

60V/5A for High-Speed Drivers Applications

60V/5A for High-Speed Drivers Applications Features • High fT. • High switching speed. • Wide ASO.