TRANSISTOR (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)

Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr= 1.0 μs (max) tf= 1.5 μs (max), (IC= 0.5 A) • High collector breakdown voltage: VCE

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

NPN Silicon Epitaxial Transistor

Features ● Excellent Switching Times tr=1.0ìs (Max.) tf=1.5ìs (Max.) at IC=0.5A ● High colletor Breakdown Voltage: VCEO=400V

Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching

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