HF Amp Applications?

HF Amplifier Applications Features • FBET series. • Very small-sized package permitting sets to be small sized and slim. • High fT (fT=750MHz typ.) and small Cre (Cre=0.6pF typ).

TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)

UHF BAND POWER AMPLIFIER APPLICATIONS ● Output Power : Po=3W (Min.) (f=470MHz, VCC=12.6V, Pi=.0.4W)

SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

[Toshiba] High Current Switching Application High Speed DC-DC Converter Application

TRANSISTOR (UHF~C BAND LOW NOISE AMPLIFIER APPLICATIONS)

UHF~C Band Low Noise Amplifier Applications • High gain: |S21e|2 = 12dB (typ.) • Low noise figure: NF = 2.3dB (typ.), f = 1 GHz • High fT: fT = 6.5 GHz

Silicon NPN Epitaxial

Features • High Gain :|S21e|2=12dB(TYP.) • Low Noise Figure: NF=2.3dB(Typ.) f=1GHz • High fT : fT=6.5GHz

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1232 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier.

PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR

Audio Frequency Power Amplifier

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PFa package ·Complement to type 2SA1232 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier.

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC3019 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers UHF band. APPLICATION Exciter stage in UHF band mobile radio application

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC3021 is a silicon NPN epitaxial planar type transistor specifically designed for UHF power amplifier applications. APPLICATION For output stage of 5W power amplifiers and drive stage of higher power amplifiers in UHF band.

NPN EPITAXIAL PLANAR TYPE

DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifically designed for UHF high power amplifier applications. APPLICATION For output stage of 15 W power amplifiers in UHF band.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·High voltage power switching character display horizontal deflection output

HIGH VOLTAGE POWER SWITCHING CHARACTER DISPLAY HORIZONTAL DEFLECTION OUTPUT

SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE POWER SWITCHING CHARACTER DISPLAY HORIZONTAL DEFLECTION OUTPUT

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·High voltage power switching character display horizontal deflection output

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage APPLICATIONS • High voltage power switching character display horizontal deflection output

HIGH VOLTAGE POWER SWITCHING CHARACTER DISPLAY HORIZONTAL DEFLECTION OUTPUT

SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE POWER SWITCHING CHARACTER DISPLAY HORIZONTAL DEFLECTION OUTPUT

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage APPLICATIONS • High voltage power switching character display horizontal deflection output

TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON

TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE, HIGH SPEED SWITCHING

TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE HIGH SPEED SWITCHING

Features • High voltage, high speed switching • High reliability Applications • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

High speed switching transistor

[COLLMER SEMICONDUCTOR] High speed switching transistor

High speed switching transistor

[COLLMER SEMICONDUCTOR] High speed switching transistor

High speed switching transistor

[COLLMER SEMICONDUCTOR] High speed switching transistor

High speed switching transistor

[COLLMER SEMICONDUCTOR] High speed switching transistor

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High breakdown voltage : VCBO=500V(Min) ·Wide area of safe operation ·Fast switching speed APPLICATIONS ·400V/4A switching regulator applications

For Switching Regulators

400V/4A Switching Regulator Applications Features · High breakdown voltage (VCBO≥500V). · Fast switching speed. · Wide ASO.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High breakdown voltage :VCBO=500V(Min) ·Wide area of safe operation ·Fast switching speed APPLICATIONS ·400V/4A switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION ··With TO-220C package ·High breakdown voltage (VCBO500V). ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·400V/7A switching regulator applications

Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)

GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose

For Switching Regulators

400V/7A Switching Regulator Applications Features · High breakdown voltage (VCBO≥500V). · Fast switching speed. · Wide ASO.

POWER TRANSISTORS(7.0A,400V,50W)

7.0 AMPERE SILICON POWER TRANSISTORS 400 VOLTS 50 WATTS

Silicon NPN Power Transistors

DESCRIPTION ··With TO-220C package ·High breakdown voltage (VCBO500V). ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·400V/7A switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High breakdown voltage (VCBO≥500V) ·Fast switching speed ·Wide ASO（Safe Operating Area） APPLICATIONS ·400V/8A switching regulator applications

For Switching Regulators

400V/8A Switching Regulator Applications Features · High breakdown voltage (VCBO≥500V). · Fast switching speed. · Wide ASO.

Silicon NPN Power Transistors

· With TO-3PN package · High breakdown voltage (VCBO 500V) · Fast switching speed

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Fast switching speed ·Wide area of safe operation ·High breakdown voltage APPLICATIONS ·For switching regulator applications

2SC3041

NPN POWER TRANSISTORS

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Fast switching speed ·Wide area of safe operation ·High breakdown voltage APPLICATIONS ·For switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High breakdown voltage (VCBO≥500V) ·Fast switching speed ·Wide ASO（Safe Operating Area） APPLICATIONS ·400V/12A switching regulator applications

For Switching Regulators

400V/12A Switching Regulator Applications Features · High breakdown voltage (VCBO≥500V). · Fast switching speed. · Wide ASO.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High breakdown voltage (VCBO 500V) ·Fast switching speed ·Wide ASO
Safe Operating Area
APPLICATIONS ·400V/12A switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Fast switching speed • Wide area of safe operation • High breakdown voltage APPLICATIONS • For switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Fast switching speed • Wide area of safe operation • High breakdown voltage APPLICATIONS • For switching regulator applications

NPN Triple Diffused Planar Type Silicon Transistor

For Switching Regulator Use ◆ High reverse voltage: 500V min. ◆ High speed switching use. ◆ Wide ASO.

MOLD TYPE BIPOLAR TRANSISTORS

MOLD TYPE BIPOLAR TRANSISTORS Rating and Specifications

High speed switching transistor

[COLLMER SEMICONDUCTOR] High speed switching transistor

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High voltage ,high speed switching • High reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High voltage ,high speed switching • High reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING

Features • High speed switching • High reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • High Reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High voltage ,high speed switching • High reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION.

FEATURES: -Excellent Switching Times : tr=1.0μs (Max.), tf=1.5us (Max.) at Ic=0.5A -High Collector Breakdown Voltage: VCEO=400V

Silicon Epitaxial Planar Transistor

FEATURES ● Low collector to emitter saturation voltage. ● Excellent linearity of DC forward current gain. ● Super mini package for easy mounting. APPLICATIONS ● For hybrid IC,small type machine low frequency voltage amplify application.

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (NPN)

FEATURES ● Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) ● Excellent linearity of DC forward current gain

LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC3052 is a mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.3V max（@Ic=100mA,IB=10mA） ● Excellent linearity of DC forward gain. ● Super mini packa

Silicon Epitaxial Planar Transistor

FEATURES ● Low collector to emitter saturation voltage. ● Excellent linearity of DC forward current gain. ● Super mini package for easy mounting. APPLICATIONS ● For hybrid IC,small type machine low frequency voltage amplify application.

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN Silicon Plastic-Encapsulate Transistor

FEATURE • Excellent linearity of DC forward current gain. • Low collector to emitter saturation voltage VCE(sat)=0.3V max. (@IC=100mA, IB=10mA)

Excellent linearity of DC forward current gain

FEATURES Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA)

Plastic-Encapsulate Transistors

FEATURES Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain