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2SC261晶体管资料

  • 2SC261别名:2SC261三极管、2SC261晶体管、2SC261晶体三极管

  • 2SC261生产厂家:日本冲电气工业股份公司

  • 2SC261制作材料:Si-NPN

  • 2SC261性质:射频/高频放大 (HF)_功率放大 (L)

  • 2SC261封装形式:直插封装

  • 2SC261极限工作电压:60V

  • 2SC261最大电流允许值:1A

  • 2SC261最大工作频率:280MHZ

  • 2SC261引脚数:3

  • 2SC261最大耗散功率

  • 2SC261放大倍数

  • 2SC261图片代号:D-112

  • 2SC261vtest:60

  • 2SC261htest:280000000

  • 2SC261atest:1

  • 2SC261wtest:0

  • 2SC261代换 2SC261用什么型号代替:BD137,BD228,2SD1200,2SD1378,3DA92B,

型号 功能描述 生产厂家 企业 LOGO 操作

Silicon NPN Triple Diffused

Application • High voltage amplifier • TV Video output

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Triple Diffused / C2610

•  High voltage amplifier\n\n•  TV Video output•  Collector to base voltage VCBO : 300 V\n\n•  Collector to emitter voltage VCEO : 300 V\n\n•  Emitter to base voltage VEBO : 5V•  Collector current IC : 100 mA•  Collector power dissipation PC : 800 mW

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Triple Diffused

Application\n  High voltage amplifier TV VIDEO output

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Triple Diffused

Application High voltage amplifier TV VIDEO output

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Triple Diffused

Application High voltage, high speed and high power switching

HITACHIHitachi Semiconductor

日立日立公司

Power Bipolar Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High collector breakdown voltage : VCEO=400V(Min) APPLICATIONS • For high voltage ,high speed and high power switching applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High collector breakdown voltage : VCEO=400V(Min) APPLICATIONS • For high voltage ,high speed and high power switching applications

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Sustaining Voltage- : VCECHSUSP 400V(Min) • Good Linearity of hFE • Low Saturation Voltage APPLICATIONS • Designed for high voltage, high speed and high power switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High collector breakdown voltage : VCEO=400V(Min) APPLICATIONS • For high voltage ,high speed and high power switching applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High collector breakdown voltage : VCEO=400V(Min) APPLICATIONS • For high voltage ,high speed and high power switching applications

SAVANTIC

Silicon NPN Triple Diffused

Application High voltage, high speed and high power switching

HITACHIHitachi Semiconductor

日立日立公司

Power Bipolar Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) • Good Linearity of hFe • Low Saturation Voltage APPLICATIONS • Designed for high voltage, high speed and high power switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING

SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION · With TO-247 package ·High voltage,high speed APPLICATIONS ·For high voltage,high speed and high power switching applications

SAVANTIC

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-247 package ·High voltage,high speed APPLICATIONS ·For high voltage,high speed and high power switching applications

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Designed for high voltage, high speed and high power switching applications.

ISC

无锡固电

HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING

SILICON NPN TRIPLE DIFFUSED

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Epitaxial

Application • Low frequency amplifier • Complementary pair with 2SA1121

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Features ● Low frequency amplifier.

KEXIN

科信电子

Silicon NPN Epitaxial

Features ● High frequency amplifier.

KEXIN

科信电子

Silicon NPN Epitaxial

Application High frequency amplifier

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Triple Diffused

文件:155.96 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon NPN Triple Diffused

文件:155.96 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon NPN Power Transistors

文件:113.56 Kbytes Page:3 Pages

ISC

无锡固电

Silicon NPN transistor in a TO-126F Plastic Package.

文件:922.13 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

Silicon NPN Power Transistor

文件:125.61 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:108.64 Kbytes Page:3 Pages

SAVANTIC

双极晶体管

FOSHAN

蓝箭电子

Silicon NPN Power Transistors

文件:107.05 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:136.92 Kbytes Page:4 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:129.37 Kbytes Page:4 Pages

SAVANTIC

Silicon NPN Triple Diffused

文件:155.63 Kbytes Page:8 Pages

RENESAS

瑞萨

Silicon NPN Power Transistors

文件:125.54 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Epitaxial

文件:91.43 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

文件:68.29 Kbytes Page:5 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

文件:91.43 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

文件:145.91 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

文件:91.43 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

文件:145.91 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

文件:68.29 Kbytes Page:5 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

文件:91.43 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

文件:145.91 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

文件:145.91 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

文件:91.43 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

文件:68.29 Kbytes Page:5 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

文件:91.43 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

文件:145.91 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

文件:199.07 Kbytes Page:9 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

文件:199.07 Kbytes Page:9 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

文件:199.07 Kbytes Page:9 Pages

RENESAS

瑞萨

2SC261产品属性

  • 类型

    描述

  • NPN/PNP:

    NPN

  • VCEO (V):

    300

  • IC (A) @25 °C:

    0.1

  • hFE min.:

    30

  • hFE max.:

    200

  • Pc (W):

    0.8

  • fT (GHz) typ.:

    0.08

  • Package Type:

    TO-92Mod

  • Production Status:

    EOL

  • Ordering Condition:

    Large order only

更新时间:2026-5-14 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HIT
23+
DIP
20000
全新原装假一赔十
HITACHI
24+/25+
950
原装正品现货库存价优
25+
5
公司现货库存
HIT
25+23+
TO-126
17002
绝对原装正品全新进口深圳现货
24+
60000
25+
5
公司现货库存
HITACHI
22+
TO-126
20000
公司只有原装 品质保证
HGF
21+
TO-126
5088
全新 发货1-2天
HITACHI/日立
24+
SOP
39000
只做原装进口现货
HITACHI/日立
26+
TO-126
43600
全新原装现货,假一赔十

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