Electrical characterlitics

General Purpose Diodes

General Purpose Diodes

General Purpose Diodes

NPN SILICON TRANSISTOR

HIGH FREQUENCY LOW NOISE AMPLIFIER\nNPN SILICON EPITAXIAL TRANSISTORDESCRIPTION\nThe 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.FEATURES\n• Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA\n• Wide dynamic range : NF = 1.9 d • Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA\n• Wide dynamic range : NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 15 mA;

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise and High Gain NF = 1.5 dB TYP. Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA • Wide Dynamic Range NF = 1.9 dB TYP. Ga = 9 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 15 mA APPLICATIONS • Designed for use in low-noise amplifier of VHF ~ UHF stages.

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages. FEATURES • Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA • Wide dynamic range :

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages. FEATURES • Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA • Wide dynamic range :

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

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