HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

DESCRIPTION The 2SC2223 is designed for use in small type equipments especially recommended for Hybrid Intergrated Circuit and other applications. Features ● Micro package. ● High gain bandwidth product. fT=600MHz TYP. ● Low output capacitance. Cob=1.0 pF TYP.

NPN Silicon Epitaxial Transistor

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=20V

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 150 mW (Tamb=25℃) Collector current ICM: 20 mA Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN-General use transistor

NPN-General use transistor 225mW 50m 20V Quality level and executive standard ◆ “G”level QZJ840611 Q/FRQZJ123-2007 ◆ the Ⅱ level of national standard GB4589.1-89 GB/T 12560-1999 Q/FR124-2007 Applications： Can be used for switching and amplifying in various ele

Old Company Name in Catalogs and Other Documents

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