HIGH POWER SWITCHING APPLICATIONS.

FEATURES : High Voltage: VCEO 400V (Min.)(2SC2204) VCEO=300V (Min.) (2SC2220) VCBO-800V (Min.)(2SC2204) VCBO=500V (Min.)(2SC2220) High Speed Switching : tf=0.7us (Typ.)

Silicon NPN epitaxial planer type(For high-frequency amplification)

Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 ■ Features • Optimum for RF amplification of FM/AM radios • High transition frequency fT • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circ

For low-frequency power amplification

Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA0963 ■ Features • Large collector power dissipation PC • Output of 5 W can be obtained by a complementary pair with 2SA0963

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) • High Collector Power Dissipation • Complement to Type 2SA963 APPLICATIONS • Designed for low frequency power amplification.

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) • High Collector Power Dissipation • Complement to Type 2SA963 APPLICATIONS • Designed for low frequency power amplification.

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2SA963 • High collector power dissipation APPLICATIONS • For low-frequency power amplification

2SC2210

2SC2210

TRANSISTOR (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS)

TV Final Picture IF Amplifier Applications • High gain: Gpe = 33dB (typ.) (f = 45 MHz) • Good linearity of hFE.

NPN Silicon Plastic-Encapsulate Transistor

Features • Capable of 300m Watts of Power Dissipation. • Collector-current : ICM=50mA • Collector-base Voltage:V(BR)CBO= 50V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Amplifier Dissipation NPN Silicon

NPN Plastic Encapsulated Transistor

FEATURES • Amplifier dissipation NPN Silicon

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current ICM: 50 mA Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN transistor in a TO-92 Plastic Package

Description Silicon NPN transistor in a TO-92 Plastic Package. Features High gain, good hFE linearity. Features TV final picture IF amplifier applications.

Silicon NPN transistor in a SOT-23 Plastic Package

Description Silicon NPN transistor in a SOT-23 Plastic Package. Features High gain, good hFE linearity. Applications TV final picture IF amplifier applications.

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE

HIGH POWER SWITCHING APPLICATIONS.

FEATURES : High Voltage: VCEO 400V (Min.)(2SC2204) VCEO=300V (Min.) (2SC2220) VCBO-800V (Min.)(2SC2204) VCBO=500V (Min.)(2SC2220) High Speed Switching : tf=0.7us (Typ.)

NPN SILICON EPITAXIAL TRANSISTOR

VHF Power Amplifier Industrial Use

NPN SILICON EPITAXIAL TRANSISTOR

VHF Power Amplifier Industrial Use

NPN General Purpose Switching Transistor

Voltage 40V Current 600mA Features • NPN epitaxial Silicon, Planar Design • Collector-emitter voltage VCE = 40V • Collector current = 600mA • Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) • Green molding compound as per IEC61249 Std.. (Halogen Free)

NPN Silicon Epitaxial Transistor

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=20V

NPN-General use transistor

NPN-General use transistor 225mW 50m 20V Quality level and executive standard ◆ “G”level QZJ840611 Q/FRQZJ123-2007 ◆ the Ⅱ level of national standard GB4589.1-89 GB/T 12560-1999 Q/FR124-2007 Applications： Can be used for switching and amplifying in various ele

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 150 mW (Tamb=25℃) Collector current ICM: 20 mA Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

DESCRIPTION The 2SC2223 is designed for use in small type equipments especially recommended for Hybrid Intergrated Circuit and other applications. Features ● Micro package. ● High gain bandwidth product. fT=600MHz TYP. ● Low output capacitance. Cob=1.0 pF TYP.

NPN Transistors

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=20V ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

NPN Transistors

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=20V ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

NPN Transistors

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=20V ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

NPN Transistors

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=20V ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

DESCRIPTION The 2SC2223 is designed for use in small type equipments especially recommended for Hybrid Intergrated Circuit and other applications. Features ● Micro package. ● High gain bandwidth product. fT=600MHz TYP. ● Low output capacitance. Cob=1.0 pF TYP.

TRANSISTOR (BLACK AND WHITE TV VIDEO OUTPUT, HIGH VOLTAHE SWITCHING, DRIVER STAGE AUDIO AMPLIFIER APPLICATIONS)

Black and White TV Video Output Applications High-Voltage Switching Applications Driver Stage Audio Amplifier Applications • High breakdown voltage: VCEO= 150 V (min) • Low output capacitance: Cob= 5.0 pF (max) • High transition frequency: fT= 120 MHz (typ.)

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=150V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 0.5V(Max) @IC= 10mA APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

T O-92MOD Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Breakdown Voltage ● High Transition Frequency

isc Silicon NPN Pow Transistor

DESCRIPTION • High breakdown voltage • Low output capacitance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High voltage switching applications • Driver stage audio amplifier applications • Black and white TV

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0.8 W (Tamb=25℃) Collector current ICM: 0.05 A Collector-base voltage V(BR)CBO: 200 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN transistor in a TO-92LM Plastic Package

Descriptions Silicon NPN transistor in a TO-92LM Plastic Package. Features High breakdown voltage, low output capacitance, high fT. Applications TV video output, high voltage switching and driver stage of audio amplifier applications.

50mA , 200V NPN Plastic Encapsulated Transistor

FEATURES • High Breakdown Voltage • High Transition Frequency

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0.8 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 200 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURE • High voltage: VCEO=180V(2SC2230A) • High DC Current Gain

Silicon NPN transistor in a TO-92LM Plastic Package

Description Silicon NPN transistor in a TO-92LM Plastic Package. Features High voltage, high DC current gain. Applications High voltage general amplifier, color TV class B sound output applications

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 160V(Min) · Collector-Emitter Saturation Voltage -VCE(sat)= 0.5V(Max)@ IC=50mA APPLICATIONS · Switching regulator and high voltage switching applications · High speed DC-DC converter applications

TO-92MOD Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE ● High voltage: VCEO=180V(2SC2230A) ● High DC Current Gain

Silicon NPN Triple Diffused Type (PCT Process)

High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications • High breakdown voltage: VCEO= 180 V (2SC2230A) • High DC current gain

TRANSISTOR (HIGH VOLTAGE GENERAL AMPLIFIER, COLOR TV CLASS B SOUND OUTPUT APPLICATIONS)

High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications • High breakdown voltage: VCEO= 180 V (2SC2230A) • High DC current gain

Silicon NPN Triple Diffused Type (PCT Process)

High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications • High breakdown voltage: VCEO= 180 V (2SC2230A) • High DC current gain

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE ● High voltage: VCEO=180V(2SC2230A) ● High DC Current Gain

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURE • High voltage: VCEO=180V(2SC2230A) • High DC Current Gain

Silicon NPN transistor in a TO-92LM Plastic Package

Description Silicon NPN transistor in a TO-92LM Plastic Package. Features High voltage, high DC current gain. Applications High voltage general amplifier, color TV class B sound output applications

SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS)

HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS FEATURES: High Voltage : VCEO = 180V (2SC2231A).

SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS)

HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS FEATURES: High Voltage : VCEO = 180V (2SC2231A).

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-:VCEO= 60V(Min) ·DC Current Gain-: hFE= 30(Min)@ (VCE= 5V, IC= 1A) ·High Collector Current ·High Collector Power Dissipation APPLICATIONS ·TV Horizontal Deflection Output Application

NPN SILICON POWER TRANSISTOR(for TV horizontal deflection output applications)

2SC2233 designed for use in TV horizontal deflection output applications.

NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

Silicon NPN Power Transistors

DESCRIPTION · With TO-220C package ·Large collector current capability ·Large collector power dissipation APPLICATIONS ·For TV horizontal deflection output applications

NPN Silicon General Purpose Transistor

FEATURES Complementary to 2SA965

Silicon NPN transistor in a TO-92LM Plastic Package

Description Silicon NPN transistor in a TO-92LM Plastic Package. Features Complementary to 2SA965. Applications Audio frequency amplifier and driver stage amplifier Applications.

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Complementary to 2SA965

TO-92MOD Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Complementary to 2SA965

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage :VCEO= 120V(Min) ·DC Current Gain : hFE= 80-240@ (VCE= 5V, IC= 0.1A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·TV Horizontal Deflection Output Application

TRANSISTOR (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)

Audio Power Amplifier Applications Driver Stage Amplifier Applications • Complementary to 2SA965.

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf