High Reliability

DESCRIPTION • High Power Gain- : Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V • High Reliability APPLICATIONS • Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications.

Silicon NPN Power Transistor

DESCRIPTION ·High Power Gain- : Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V ·High Reliability APPLICATIONS ·Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications.

Silicon NPN Transistor Final RF Power Output

Silicon NPN Power Transistor Final RF Power Output The 2SC2166 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. APPLICATION 3 to 4 Watt Output Power Class AB Amplifiers in HF Band

3 to 4 watts output power amplifiers in VHF band mobile radio applications.

DESCRIPTION 2SC2166 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. APPLICATION 3 to 4 watts output power amplifiers in HF band mobile radio applications.

Silicon NPN Power Transistor

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