丝印代码：2SC2130；TO-92 Plastic-Encapsulate Transistors

FEATURES High DC Current Gain

丝印代码：2SC2130；TO-92 Plastic-Encapsulate Transistors

FEATURES High DC Current Gain

VHF BAND POWER AMPLIFIER APPLICATIONS.

FEATURES : Output Power: Po=150W (Min.) (f=175MHz, VCC=12.5V, Pi=1.3W) 100 Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR Vcc-13.5V, Pi=1.3W, f=175MHz

VHF BAND POWER AMPLIFIER APPLICATIONS.

FEATURES : Output Power : Po-27W (Min.) (f=175MHz, VCC-12.5V, P₁=4.2W ) 100 Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=14.5V, Pi-4W, f-175MHz

UHF BAND POWER AMPLIFIER APPLICATIONS.

FEATURES : Output Power : Po=3W (Min.) (f=470MHz, VCC-12.6V, Pi=0.4W ) 100 Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=15V, Pi=0.4W, f=470MHz

UHF BAND POWER AMPLIFIER APPLICATIONS.

FEATURES : Output Power : Po=6W (Min.) (f=470MHz, VCC-12.6V, Pi=1W ) 100 Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=12.6V, Pi=6.5W, f=470MHz

UHF BAND POWER AMPLIFIER APPLICATIONS.

FEATURES : Output Power : Po=12W (Min.) (f=470MHz, VCC=12.6V, Pi=3W ) 100 Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=15V, Pi=3W, f=470MHz

VHF BAND POWER AMPLIFIER APPLICATIONS.

FEATURES : Output Power : Po=2.8W (Min.) (f=175MHz, VCC=13.5V, Pi=0.15W ) 100 Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=13.5V, Pi=4W, f=175MHz

VHF BAND POWER AMPLIFIER APPLICATIONS

Audio Power Amplifier Applications

Audio Power Amplifier Applications ​​​​​​​ • High hFE: hFE (1)= 100~320 • 1 watts amplifier applications. • Complementary to 2SA950

TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)

Audio Power Amplifier Applications ​​​​​​​ • High hFE: hFE (1)= 100~320 • 1 watts amplifier applications. • Complementary to 2SA950

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for audio frequency amplifier applications.

Medium Power Amplifiers and Switches

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

isc Silicon NPN Transistor

DESCRIPTION • High hFE(1)=100-320 • 1 Watts Amplifier Applications • Complement to Type 2SA950 APPLICATIONS • Audio power amplifier Applications

丝印代码：C2120；TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High DC Current Gain ● Complementary to 2SA950

NPN Type Plastic Encapsulate Transistors

FEATURES • High DC Current Gain • Complementary to 2SA950

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High hFE,1 watts amplifier applications, complementary pair with 2SA950. Applications Audio frequency power amplifier applications.

TO-92 Plastic-Encapsulate Transistors (NPN)

FEATURES • High DC Current Gain • Complementary to 2SA950

Audio Power Amplifier Applications

Audio Power Amplifier Applications ​​​​​​​ • High hFE: hFE (1)= 100~320 • 1 watts amplifier applications. • Complementary to 2SA950

NPN Silicon Transistors

Features • Complementary Pair With 2SA950 • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information)

NPN Silicon Transistors

Features • Complementary Pair With 2SA950 • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information)

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Short switching times. ·High dielectric strength. APPLICATIONS ·For use in TV horizontal deflection stage

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Short switching times. ·High dielectric strength. APPLICATIONS ·For use in TV horizontal deflection stage

POWER TRANSISTOR

POWER TRANSISTORS

POWER TRANSISTOR

POWER TRANSISTORS

POWER TRANSISTOR

POWER TRANSISTORS

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in UHF band Mobile radio applications)

DESCRIPTION 2SC2131 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in UHF band mobile radio applications.

NPN EPITAXIAL PLANAR TYPE

DESCRIPTION 2SC2131 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in UHF band mobile radio applications.

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in UHF band 24 to 28 volts operation applications)

DESCRIPTION 2SC2133 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in UHF band 24 to 28 volts operation applications.

NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)

DESCRIPTION 2SC2134 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band 24 to 28 volts operation applications. APPLICATION 30 to 30 watts output linear power amplifiers such as TV transposer amplifiers in VHF band.

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, micro X. These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use. FEATURES 2SC2148 NF: 2.1

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, micro X. These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use. FEATURES 2SC2148 NF: 2.1

SILICON TRANSISTR

DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, micro X. These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use. FEATURES 2SC2148 NF: 2.1

SILICON TRANSISTR

DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, micro X. These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use. FEATURES 2SC2148 NF: 2.1

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, micro X. These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use. FEATURES 2SC2148 NF: 2.1

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, micro X. These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use. FEATURES 2SC2148 NF: 2.1

NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)?

DESCRIPTION 2SC2166 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. APPLICATION 3 to 4 watts output power amplifiers in HF band mobile radio applications.

Silicon NPN Transistor Final RF Power Output

Silicon NPN Power Transistor Final RF Power Output The 2SC2166 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. APPLICATION 3 to 4 Watt Output Power Class AB Amplifiers in HF Band

Silicon NPN Power Transistor

DESCRIPTION ·High Power Gain- : Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V ·High Reliability APPLICATIONS ·Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications.

High Reliability

DESCRIPTION • High Power Gain- : Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V • High Reliability APPLICATIONS • Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications.

3 to 4 watts output power amplifiers in VHF band mobile radio applications.

DESCRIPTION 2SC2166 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. APPLICATION 3 to 4 watts output power amplifiers in HF band mobile radio applications.

UHF BAND POWER AMPLIFIER APPLICATIONS

VHF BAND POWER AMPLIFIER APPLICATIONS

Silicon NPN epitaxial planer type(For intermediate frequency amplification of TV image)

■ Features ● High transition frequency fT. ● Satisfactory linearity of forward current transfer ratio hFE. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

POWER AMPLIFIER APPLICATIONS.

FEATURES: Suitable for TV Sound Output. Vert. Deflection Output. Designed for Complementary Use with 2SA962A.

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封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 30V 0.8A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 30V 0.8A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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