2SC2050

NPN SILICON TRANSISTOR

NPN EPITAXIAL PLANAR TYPE(for RF amplifiers on VHF band Mobile radio applications)

2SC2053 is a silicon NPN epitaxial planar type transistor desinged for RF amplifiers on VHF band mobile a radio applications.

RF POWER TRANSISTOR NPN EPITAXAIL PLANAR TYPE

DESCRITION\n2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications.FEATURES\n● High power gain: Gpe ≥ 13dB\n   @VCC = 7.2V, PO = 0.2W, f = 175MHz\n● Emitter ballasted construction, gold metallization for high\n   reli ● High power gain: Gpe ≥ 13dB\n   @VCC = 7.2V, PO = 0.2W, f = 175MHz\n● Emitter ballasted construction, gold metallization for high\n   reliability and good performances.\n● TO-92 similar package is combinient for mountingAPPLICATION\n   Driver amplifiers in general in VHF band portable or hand-held;

NPN EPITAXIAL PLANAR TYPE(for RF amplifiers on VHF band portable or hand-held radio applications)

DESCRITION 2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications. FEATURES ● High power gain: Gpe ≥ 13dB @VCC = 7.2V, PO = 0.2W, f = 175MHz ● Emitter ballasted construction, gold metallization for high

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in VHF band portable or hand-held radio applications)

DESCRIPTION 2SC2056 is a silicon NPN epitaxial planar type ttransistor designed for RF amplifiers on VHF band portable or hand-held radio applications.

TRANSISTOR NPN EPITAXIAL PLANAR

Features 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2) Low rbb, high gain, and excellent noise characteristics.

High-frequency Amplifier Transistor(25V, 50mA, 300MHz)

High-frequency Amplifier Transistor (25V, 50mA, 300MHz) Features 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2) Low rbb, high gain, and excellent noise characteristics.

Driver amplifiers in general in VHF band mobile radio applica-tions.

文件：251.94 Kbytes Page：3 Pages

NPN EPITAXIAL PLANAR TYPE

文件：222.9 Kbytes Page：2 Pages

NPN EPITAXIAL PLANAR TYPE

MITSUBISHI RF POWER TRANSISTOR

Silicon NPN transistor in a TO-92 Plastic Package

文件：801.96 Kbytes Page：6 Pages

丝印代码：TP；High-frequency Amplifier Transistor (25V, 50mA, 300MHz)

文件：172.69 Kbytes Page：3 Pages

封装/外壳：SC-72 成形引线 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 25V 0.05A SPT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个