SiliconNPNEpitaxailType(forAudioFrequencyGeneralPurposeAmplifierApplications)

AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)

SiliconNPNEpitaxialType(PCTprocess)

AudioFrequencyGeneralPurposeAmplifierApplications DriverStageAmplifierApplications •Highvoltageandhighcurrent: VCEO=50V(min), IC=150mA(max) •ExcellenthFElinearity:hFE(2)=100(typ.) atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(

NPNTransistor

Features ●Powerdissipation

NPNTypePlasticEncapsulateTransistors

FEATURES •PowerDissipation PCM:0.4W(Ta=25°C) •CollectorCurrent ICM:0.15A •Collector-BaseVoltage V(BR)CBO:60V

AudioFrequencyVoltageAmplifierApplicationsLowNoiseAmplifierApplications

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