SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING

SILICON NPN EPITAXIAL DIFFUSED HIGH VOLTAGE SWITHCING

SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING

SILICON NPN EPITAXIAL DIFFUSED HIGH VOLTAGE SWITHCING

LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING

SILICON NPN EPITAXIAL LTP LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING

LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING

SILICON NPN EPITAXIAL LTP LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING

LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING

SILICON NPN EPITAXIAL LTP LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING

LOW FREQUENCY POWER AMPLIFIER TV HORIZONTAL/VERTICAL DRIV

SILICON NPN TRIPLE DIFFUSED LTP LOW FREQUENCY POWER AMPLIFIER TV HORIZONTAL/VERTICAL DRIV

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High breakdown voltage • High transition frequency APPLICATIONS • Low frequency power amplifier • TV horizontal/vertical driver

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High breakdown voltage • High transition frequency APPLICATIONS • Low frequency power amplifier • TV horizontal/vertical driver

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High breakdown voltage • High transition frequency APPLICATIONS • Low frequency high voltage power amplifier • TV power supply driver

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High breakdown voltage • High transition frequency APPLICATIONS • Low frequency high voltage power amplifier • TV power supply driver

LOW FREQUENCY HIGH VOLTAHE POWER AMPLIFIER TV POWER SUPPLY DRIVER

SILICON NPN TRIPLE DIFFUSED LTP LOW FREQUENCY HIGH VOLTAHE POWER AMPLIFIER TV POWER SUPPLY DRIVER

2SC1728

2SC1728 / 2SC1760 Transistors

NPN EPITAXAIL PLANAR TYPE

DESCRIPTION 2SC1729 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio amplications.

isc Silicon NPN RF Transistor

DESCRIPTION ·Low Base Time Constant; rbb’ • CC = 10 ps TYP. ·High Gain Bandwidth Product fT= 1100 MHz TYP. ·Low Output Capacitance; COB = 1.5 pF Max. APPLICATIONS ·Designed for TV VHF, UHF tuner oscillator applications.

NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER INDUSTRIAL USE

DESCRIPTION The 2SC1733 is an NPN silicon epitaxial dual transistor designed for use in high-frequency differential amplifier applications. Two transistor chips equivalent to the 2SC1275 are housed in a package the same size as TO-18 FEATURES High gain bandwidth product: fT = 2 GHz TYP. C

2SC1735

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Small base output capacitance, complementary pair with 2SA933A. Applications General purpose amplifier.

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Small base output capacitance, complementary pair with 2SA933M. Applications General purpose amplifier.

NPN Plastic-Encapsulated Transistor

FEATURES ● Low Cob

TO-92S Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Cob

2SC4097 / 2SC1741S

● Features 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029.

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/Rohs Compliant (PSuffix designates Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Power dissipation: PCM = 0.3W(Tamb=25°C) • Collector current: ICM = 0.15A • Collector-base voltage: V(BR)CBO =

NPN Plastic-Encapsulated Transistor

FEATURES ● Low Cob

NPN Plastic-Encapsulated Transistor

FEATURES ● Low Cob

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/Rohs Compliant (PSuffix designates Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Power dissipation: PCM = 0.3W(Tamb=25°C) • Collector current: ICM = 0.15A • Collector-base voltage: V(BR)CBO =

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/Rohs Compliant (PSuffix designates Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Power dissipation: PCM = 0.3W(Tamb=25°C) • Collector current: ICM = 0.15A • Collector-base voltage: V(BR)CBO =

NPN Plastic-Encapsulated Transistor

FEATURES ● Low Cob

General purpose transistor (50V, 0.15A)

2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Datasheet

Medium Power Transistor (50V, 0.5A)

Features 1) High current.(IC=5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC/ IB=150mA / 15mA.

Medium Power Transistor (32V, 0.5A)

Features 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for lowvoltage operation. 3) Complements the 2SA1036K / 2SA1577 / 2SA854S. Structure Epitaxial planar type NPN silicon transistor

TO-92S Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High IC ● Low VCE(sat). Optimal for Low Voltage Operation ● Complements the 2SA854S

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- :V(BR)cEo= SOOV(Min) • DC Current Gain- • hFE= 40-200 @lc= 10mA, VCE= 10V • High Current-Gain Bandwidth Product APPLICATIONS • Designed for color TV chroma, video , audio output applications.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High breakdown voltage APPLICATIONS • For TV chroma,video ,audio output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High breakdown voltage APPLICATIONS • For TV chroma,video ,audio output applications

NPN Triple Diffued Silicon Transistor

NPN Triple Diffued Silicon Transistor FOR CHROMA OUTPUT & AF OUTPUT OF COLOR TV FOR VIDEO OUTPUT & AF OUTPUT OF B/W TV

TV Chroma, Video,Audio Output Applications

NPN Triple Diffued Silicon Transistor FOR CHROMA OUTPUT & AF OUTPUT OF COLOR TV FOR VIDEO OUTPUT & AF OUTPUT OF B/W TV

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High breakdown voltage APPLICATIONS • For TV chroma,video ,audio output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High breakdown voltage APPLICATIONS • For TV chroma,video ,audio output applications

NPN Triple Diffued Silicon Transistor

NPN Triple Diffued Silicon Transistor FOR CHROMA OUTPUT & AF OUTPUT OF COLOR TV FOR VIDEO OUTPUT & AF OUTPUT OF B/W TV

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High breakdown voltage APPLICATIONS • For TV chroma,video ,audio output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High breakdown voltage APPLICATIONS • For TV chroma,video ,audio output applications

NPN Triple Diffued Silicon Transistor

NPN Triple Diffued Silicon Transistor FOR CHROMA OUTPUT & AF OUTPUT OF COLOR TV FOR VIDEO OUTPUT & AF OUTPUT OF B/W TV

2SC1728

2SC1728 / 2SC1760 Transistors

2~30MHz SSB LINEAR PWER AMPLIFIER APPLICATIONS.

FEATURES Specified 28v, 28MHz Characteristics -Output Power : Po=40WPEP -Minimum Gain : Gpe=16dB -Efficiency : =40(Min.) -Intermodulation Distortion : IMD=-30dB(Max.)

2~30MHz SSB LINEAR PWER AMPLIFIER APPLICATIONS.

FEATURES Specified 28v, 28MHz Characteristics -Output Power : Po=80WPEP -Minimum Gain : Gpe=14.5dB -Efficiency : =40(Min.) -Intermodulation Distortion : IMD=-30dB(Max.)

UHF BAND POWER AMPLIFIER APPLICATIONS.

FEATURES -Output Power : Po=2.8W(Min.) (f=470MHz, VCC=12.6V, PI=0.6W) -100 Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=12.6V, Pi=0.6W, f=470MHz

TRANSISTOR(NPN)

FEATURES ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage APPLICATIONS ● Power Amplifier

NPN Epitaxial Transistor

FEATURES ● Small flat package. ● Low saturation voltage VCE(sat)=-0.5V ● High speed switching time ● PC=1.0 to 2.0W ● High saturation current capability APPLICATIONS ● Power amplifier

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage APPLICATIONS ● Power Amplifier

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage APPLICATIONS ● Power Amplifier

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Pb-Free package is available PoHS product for packing code suffix G Halogen free product for packing code suffix H ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage APPLICATIONS ● Power Amplifier

Plastic-Encapsulate Transistors

FEATURES • Small flat package. • Low saturation voltage VCE(sat)=-0.5V • High speed switching time • PC=1.0 to 2.0W

NPN Epitaxial Transistor

VOLTAGE 50 Volts CURRENT 2 Ampere FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.5V(max.)(I =-1A) * High speed switching time: tstg= 1.0uSec (typ.) * PC= 1.0 to 2.0W (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Power

Silicon NPN Epitaxial

* Low frequency low noise amplifier * Complementary pair with 2SA872/A

Silicon NPN Epitaxial

* Low frequency low noise amplifier * Complementary pair with 2SA872/A

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • Excellent safe operating area APPLICATIONS • For use in high power audio amplifier applications and high voltage switching regulator circuits

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • Excellent safe operating area APPLICATIONS • For use in high power audio amplifier applications and high voltage switching regulator circuits

SILICON NPN EPITAXIAL PLANAR TRANSISTOR

SILICON NPN EPITAXIAL PLANAR TRANSISTOR APPLICATION: ● Mixer, Oscillator

Si NPN Planar

RF Amplifier Features • High fT • Low Cre • Center emitter configuration

HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING

SILICON NPN EPITAXIAL LTP HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING