PNP SILICON EPITAXIAL DARLINGTON TRANSISTOR MP-3?

DESCRIPTION 2SB963-Z is designed for switching, especially in Hybrid integrated Circuits FEATURES ● High Gain hFE = 2000 to 3000 ● Complement to 2SD1286-Z

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Very high DC current gain • Monolithic darlington transistor with integrated antiparallel collector-emitter diode • Complement to type 2SD1286-Z • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) DESCRIPTION The 2SB963-Z is designed for switching, especially in Hybrid FEATURES • High Gain hFE = 2000 to 3000 • Complement to 2SD1286-Z

Bipolar Power Transistors

PNP SILICON EPITAXIAL DARLINGTON TRANSISTOR MP-3?

DESCRIPTION 2SB963-Z is designed for switching, especially in Hybrid integrated Circuits FEATURES ● High Gain hFE = 2000 to 3000 ● Complement to 2SD1286-Z

isc Silicon PNP Darlington Power Transistor

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PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)

文件：739.78 Kbytes Page：6 Pages