2SB96晶体管资料

  • 2SB96别名:2SB96三极管、2SB96晶体管、2SB96晶体三极管

  • 2SB96生产厂家:日本松下公司

  • 2SB96制作材料:Ge-PNP

  • 2SB96性质:低频或音频放大 (LF)

  • 2SB96封装形式:直插封装

  • 2SB96极限工作电压:32V

  • 2SB96最大电流允许值:0.125A

  • 2SB96最大工作频率:<1MHZ或未知

  • 2SB96引脚数:3

  • 2SB96最大耗散功率:0.125W

  • 2SB96放大倍数

  • 2SB96图片代号:C-49

  • 2SB96vtest:32

  • 2SB96htest:999900

  • 2SB96atest:0.125

  • 2SB96wtest:0.125

  • 2SB96代换 2SB96用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,2SB54,2SB56,3AX53B,

型号 功能描述 生产厂家 企业 LOGO 操作

PNP SILICON EPITAXIAL TRANSISTOR MP-3?

DESCRIPTION The 2SB962-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.3 V TYP.

NEC

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR MP-3?

DESCRIPTION The 2SB962-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.3 V TYP.

NEC

瑞萨

PNP Silicon Epitaxial Transistor

■ Features ● Low collector to emitter saturation voltage VCE(sat).

KEXIN

科信电子

isc Silicon PNP Power Transistor

DESCRIPTION • Low VCE(sat)=-0.3V TYP • PNP silicon epitaxial transistor • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • The 2SB962-Z is designed for Audio frequency amplifier and switching ,especially in hybrid integr

ISC

无锡固电

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SB962-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.3 V TYP.

RENESAS

瑞萨

PNP SILICON EPITAXIAL DARLINGTON TRANSISTOR MP-3?

DESCRIPTION 2SB963-Z is designed for switching, especially in Hybrid integrated Circuits FEATURES ● High Gain hFE = 2000 to 3000 ● Complement to 2SD1286-Z

NEC

瑞萨

PNP SILICON EPITAXIAL DARLINGTON TRANSISTOR MP-3?

DESCRIPTION 2SB963-Z is designed for switching, especially in Hybrid integrated Circuits FEATURES ● High Gain hFE = 2000 to 3000 ● Complement to 2SD1286-Z

NEC

瑞萨

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) DESCRIPTION The 2SB963-Z is designed for switching, especially in Hybrid FEATURES • High Gain hFE = 2000 to 3000 • Complement to 2SD1286-Z

RENESAS

瑞萨

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Very high DC current gain • Monolithic darlington transistor with integrated antiparallel collector-emitter diode • Complement to type 2SD1286-Z • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO

ISC

无锡固电

PNP Silicon Epitaxial/NPN Triple Diffused Transistor Audio Frequency Power Amplifier

PNP Silicon Epitaxial/NPN Triple Diffused Transistor Audio Frequency Power Amplifier

NEC

瑞萨

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1288 APPLICATIONS ·For use in low frequency and power amplifier applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1288 APPLICATIONS ·For use in low frequency and power amplifier applications

SAVANTIC

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1289 APPLICATIONS ·For use in low frequency and power amplifier applications

SAVANTIC

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1289 APPLICATIONS ·For use in low frequency and power amplifier applications

JMNIC

锦美电子

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1289 APPLICATIONS ·For use in low frequency and power amplifier applications

ISC

无锡固电

PNP Silicon Epitaxial/NPN Silicon Triple Diffused Transistor

Pnp Silicon Epitaxial/NPN Silicon Triple Diffused Transistor Audio Frequency Amplifier

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= - 0.65V(Typ)@IC= -5.0A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Complement to Type 2SD1289 ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

ISC

无锡固电

Silicon PNP Epitaxial Planar Type

Features ● Possible to solder the radiation fin directly to printed cicuit board. ● Low collector-emitter saturation voltage VCE(sat). ● Large collector current IC.

KEXIN

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Silicon PNP epitaxial planar type(For low-frequency power amplification)

Silicon PNP epitaxial planar type For low-frequency power amplification ■ Features ● Possible to solder the radiation fin directly to printed cicuit board ● Low collector to emitter saturation voltage VCE(sat) ● Large collector current IC

Panasonic

松下

For Low-Frequency Output Amplification

Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 ■ Features • Possible to solder radiation fin directly to printed circuit board • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC

Panasonic

松下

Silicon PNP Epitaxial Planar Type

Features ● Possible to solder the radiation fin directly to printed cicuit board. ● High collector-emitter voltage VCEO. ● Large collector power dissipation PC.

KEXIN

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Silicon PNP epitaxial planar type(For low-frequency output amplification)

Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 ■ Features • Possible to solder radiation fin directly to printed circuit board • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC

Panasonic

松下

Bipolar Power Transistors

RENESAS

瑞萨

PNP Transistors

文件:931.34 Kbytes Page:3 Pages

KEXIN

科信电子

PNP SILICON EPITAXIAL TRANSISTOR

文件:821.9 Kbytes Page:6 Pages

RENESAS

瑞萨

PNP Transistors

文件:931.34 Kbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:931.34 Kbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:931.34 Kbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:931.34 Kbytes Page:3 Pages

KEXIN

科信电子

isc Silicon PNP Darlington Power Transistor

文件:299.39 Kbytes Page:2 Pages

ISC

无锡固电

Bipolar Power Transistors

RENESAS

瑞萨

Bipolar Power Transistors

RENESAS

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)

文件:739.78 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon PNP Power Transistors

文件:124.24 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件:120.14 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件:158.72 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:158.72 Kbytes Page:3 Pages

JMNIC

锦美电子

PNP Transistors

文件:991.93 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:991.93 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:991.93 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:991.93 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:1.15406 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.15406 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.15406 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.15406 Mbytes Page:3 Pages

KEXIN

科信电子

2SB96产品属性

  • 类型

    描述

  • 型号

    2SB96

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY NEC TRANSISTOR SC-64-40V -3A 10W BCEC

更新时间:2025-12-25 8:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
TO252
990000
明嘉莱只做原装正品现货
NEC
22+
SOT-252
100000
代理渠道/只做原装/可含税
NEC
2023+
TO252
8800
正品渠道现货 终端可提供BOM表配单。
NEC
24+
SOT-252
480
原装现货假一罚十
NEC
24+
NA/
13250
原装现货,当天可交货,原型号开票
NEC
24+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
TO-252
23+
NA
15659
振宏微专业只做正品,假一罚百!
Toshiba
25+23+
To-252
30000
绝对原装正品全新进口深圳现货
NEC
24+
102000

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