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2SB96晶体管资料

2SB96别名：2SB96三极管、2SB96晶体管、2SB96晶体三极管
2SB96生产厂家：日本松下公司
2SB96制作材料：Ge-PNP
2SB96性质：低频或音频放大（LF）
2SB96封装形式：直插封装
2SB96极限工作电压：32V
2SB96最大电流允许值：0.125A
2SB96最大工作频率：<1MHZ或未知
2SB96引脚数：3
2SB96最大耗散功率：0.125W
2SB96放大倍数：
2SB96图片代号：C-49
2SB96vtest：32
2SB96htest：999900
2SB96atest：0.125
2SB96wtest：0.125

2SB96代换 2SB96用什么型号代替：AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,2SB54,2SB56,3AX53B,

型号	功能描述	生产厂家企业	LOGO
2SB962	PNP SILICON EPITAXIAL TRANSISTOR MP-3? DESCRIPTION The 2SB962-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.3 V TYP.	NEC 瑞萨	NEC
2SB962-Z	PNP SILICON EPITAXIAL TRANSISTOR MP-3? DESCRIPTION The 2SB962-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.3 V TYP.	NEC 瑞萨	NEC
2SB962-Z	isc Silicon PNP Power Transistor DESCRIPTION • Low VCE(sat)=-0.3V TYP • PNP silicon epitaxial transistor • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • The 2SB962-Z is designed for Audio frequency amplifier and switching ,especially in hybrid integr	ISC 无锡固电	ISC
2SB962-Z	SILICON POWER TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SB962-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.3 V TYP.	RENESAS 瑞萨	RENESAS
2SB962-Z	PNP Silicon Epitaxial Transistor ■ Features ● Low collector to emitter saturation voltage VCE(sat).	KEXIN 科信电子	KEXIN
2SB962-Z	Bipolar Power Transistors Support is limited to customers who have already adopted these products.\n\nThe 2SB962-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. • Low VCE(sat): VCE(sat) = −0.3 V TYP.;	RENESAS 瑞萨	RENESAS
2SB963	Bipolar Power Transistors Support is limited to customers who have already adopted these products.\n\nThe 2SB963-Z is designed for switching, especially in Hybrid Integrated Circuits. • High Gain hFE = 2000 to 3000\n• Complement to 2SD1286-Z;	RENESAS 瑞萨	RENESAS
2SB963	PNP SILICON EPITAXIAL DARLINGTON TRANSISTOR MP-3? DESCRIPTION 2SB963-Z is designed for switching, especially in Hybrid integrated Circuits FEATURES ● High Gain hFE = 2000 to 3000 ● Complement to 2SD1286-Z	NEC 瑞萨	NEC
2SB963-Z	SILICON POWER TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) DESCRIPTION The 2SB963-Z is designed for switching, especially in Hybrid FEATURES • High Gain hFE = 2000 to 3000 • Complement to 2SD1286-Z	RENESAS 瑞萨	RENESAS
2SB963-Z	丝印代码：DPAK；isc Silicon PNP Darlington Power Transistor DESCRIPTION • With TO-252(DPAK) packaging • Very high DC current gain • Monolithic darlington transistor with integrated antiparallel collector-emitter diode • Complement to type 2SD1286-Z • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO	ISC 无锡固电	ISC
2SB963-Z	PNP SILICON EPITAXIAL DARLINGTON TRANSISTOR MP-3? DESCRIPTION 2SB963-Z is designed for switching, especially in Hybrid integrated Circuits FEATURES ● High Gain hFE = 2000 to 3000 ● Complement to 2SD1286-Z	NEC 瑞萨	NEC
2SB963-Z	Bipolar Power Transistors Support is limited to customers who have already adopted these products.\n\nThe 2SB963-Z is designed for switching, especially in Hybrid Integrated Circuits. • High Gain hFE = 2000 to 3000\n• Complement to 2SD1286-Z;	RENESAS 瑞萨	RENESAS
2SB965	Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1288 APPLICATIONS ·For use in low frequency and power amplifier applications	SAVANTIC	SAVANTIC
2SB965	Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1288 APPLICATIONS ·For use in low frequency and power amplifier applications	ISC 无锡固电	ISC
2SB965	PNP Silicon Epitaxial/NPN Triple Diffused Transistor Audio Frequency Power Amplifier PNP Silicon Epitaxial/NPN Triple Diffused Transistor Audio Frequency Power Amplifier	NEC 瑞萨	NEC
2SB966	PNP Silicon Epitaxial/NPN Silicon Triple Diffused Transistor Pnp Silicon Epitaxial/NPN Silicon Triple Diffused Transistor Audio Frequency Amplifier	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SB966	Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1289 APPLICATIONS ·For use in low frequency and power amplifier applications	ISC 无锡固电	ISC
2SB966	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= - 0.65V(Typ)@IC= -5.0A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Complement to Type 2SD1289 ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS	ISC 无锡固电	ISC
2SB966	Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1289 APPLICATIONS ·For use in low frequency and power amplifier applications	JMNIC 锦美电子	JMNIC
2SB966	Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1289 APPLICATIONS ·For use in low frequency and power amplifier applications	SAVANTIC	SAVANTIC
2SB967	Silicon PNP epitaxial planar type(For low-frequency power amplification) Silicon PNP epitaxial planar type For low-frequency power amplification ■ Features ● Possible to solder the radiation fin directly to printed cicuit board ● Low collector to emitter saturation voltage VCE(sat) ● Large collector current IC	PANASONIC 松下	PANASONIC
2SB967	Silicon PNP Epitaxial Planar Type Features ● Possible to solder the radiation fin directly to printed cicuit board. ● Low collector-emitter saturation voltage VCE(sat). ● Large collector current IC.	KEXIN 科信电子	KEXIN
2SB968	Silicon PNP Epitaxial Planar Type Features ● Possible to solder the radiation fin directly to printed cicuit board. ● High collector-emitter voltage VCEO. ● Large collector power dissipation PC.	KEXIN 科信电子	KEXIN
2SB968	For Low-Frequency Output Amplification Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 ■ Features • Possible to solder radiation fin directly to printed circuit board • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC	PANASONIC 松下	PANASONIC
2SB968	Silicon PNP epitaxial planar type(For low-frequency output amplification) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 ■ Features • Possible to solder radiation fin directly to printed circuit board • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC	PANASONIC 松下	PANASONIC
2SB962-Z_15	PNP SILICON EPITAXIAL TRANSISTOR 文件：821.9 Kbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
2SB962-Z_15	PNP Transistors 文件：931.34 Kbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB962-Z-E	PNP Transistors 文件：931.34 Kbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB962-Z-P	PNP Transistors 文件：931.34 Kbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB962-Z-Q	PNP Transistors 文件：931.34 Kbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB962-Z-R	PNP Transistors 文件：931.34 Kbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB963	丝印代码：IPAK；isc Silicon PNP Darlington Power Transistor 文件：299.39 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SB963-Z_15	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) 文件：739.78 Kbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
2SB965	Silicon PNP Power Transistors 文件：124.24 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB966	Silicon PNP Power Transistors 文件：120.14 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB966_15	Silicon PNP Power Transistors 文件：158.72 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB966_2014	Silicon PNP Power Transistors 文件：158.72 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB967_15	PNP Transistors 文件：991.93 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB967-P	PNP Transistors 文件：991.93 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB967-Q	PNP Transistors 文件：991.93 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB967-R	PNP Transistors 文件：991.93 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB968_15	PNP Transistors 文件：1.15406 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB968-P	PNP Transistors 文件：1.15406 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB968-Q	PNP Transistors 文件：1.15406 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB968-R	PNP Transistors 文件：1.15406 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN

2SB96产品属性

类型
描述
Vcbo (V)：
-40
VCEO (V)：
-30
Vebo (V)：
-5
IC @25 °C (A)：
-3
VCE (sat) (V)：
-0.5
hFE：
60-400
Pc (W)：
10
fT (Typical) (GHz)：
0.08
Cob (Typical) (pF)：
55

2SB96供应商更多...

更新时间：2026-5-14 18:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市豪迈兴电子有限公司	2SB962-Z	NEC	24+		8858	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市振宏微科技有限公司	2SB962-Z-T2,MAX8867ZK50,BST51	TO-252	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市科恒伟业电子有限公司	2SB962-Z-E1	NEC	2450+	TO252	6540	只做原厂原装正品现货或订货!终端工厂可以申请样品!	询价
深圳市华斯顿科技有限公司	2SB962-Z-T2/B962	Toshiba	25+23+	To-252	30000	绝对原装正品全新进口深圳现货	询价
深圳市一线半导体有限公司	2SB962-Z-E1	NEC	24+		102000		询价
深圳市创新迹电子有限公司	2SB962-Z-E2	NEC	22+	SOT-252	20000	公司只有原装品质保证	询价
上海金庆电子技术有限公司	2SB962-Z-E2	NEC	05+	SOT-252	2187	全新发货1-2天	询价
洪芯国际半导体（深圳）有限公司	2SB962-Z-T2/B962	NEC	26+	原厂原封装	86720	全新原装正品价格最实惠假一赔百	询价
深圳市明盛嘉电子科技有限公司	2SB962-Z-E1-AZ	RENESAS/瑞萨	26+	TO-252	43600	全新原装现货,假一赔十	询价
深圳市诺美思科技有限公司	2SB962-Z-E1	RENESAS		原厂封装	9800	原装进口公司现货假一赔百	询价

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找IC，尽在114IC

2SB96晶体管资料

2SB96产品属性

2SB96供应商更多...

2SB96芯片相关品牌

2SB96规格书下载地址

2SB96参数引脚图相关

2SB96数据表相关新闻

2SB857L-TO252R-D-TG_UTC代理商

2SC1815L-TO92K-Y-TG_UTC代理商

2SB857L-TO126CK-D-TG_UTC代理商

2SB834L-TO220FT-O-TG_UTC代理商

2SC2712G-SOT23.3R-Y-TG

2SC2334中文资料

DdatasheetPDF页码索引