isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD855 APPLICATIONS ·Medium power amplifier applications.

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD855 APPLICATIONS ·For audio frequency and radio frequency power amplifier applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SD856/856A ·Low collector saturation voltage APPLICATIONS ·For audio frequency power amplifier applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SD856/856A ·Low collector saturation voltage APPLICATIONS ·For audio frequency power amplifier applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SD856/856A ·Low collector saturation voltage APPLICATIONS ·For audio frequency power amplifier applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SD856/856A ·Low collector saturation voltage APPLICATIONS ·For audio frequency power amplifier applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SD856/856A ·Low collector saturation voltage APPLICATIONS ·For audio frequency power amplifier applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SD856/856A ·Low collector saturation voltage APPLICATIONS ·For audio frequency power amplifier applications

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD857 APPLICATIONS • Designed for AF power amplifier applications.

2SB762A

DESCRIPTION • With TO-220C package • Complement to type 2SD857/857A • Low collector saturation voltage APPLICATIONS • For audio frequency power amplifier applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SD857/857A • Low collector saturation voltage APPLICATIONS • For audio frequency power amplifier applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SD857/857A • Low collector saturation voltage APPLICATIONS • For audio frequency power amplifier applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SD857/857A • Low collector saturation voltage APPLICATIONS • For audio frequency power amplifier applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SD857/857A • Low collector saturation voltage APPLICATIONS • For audio frequency power amplifier applications

2SB762A

DESCRIPTION • With TO-220C package • Complement to type 2SD857/857A • Low collector saturation voltage APPLICATIONS • For audio frequency power amplifier applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SD858 • Wide area of safe operation APPLICATIONS • For power amplifier applications

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) • Good Linearity of hFE • High Collector Power Dissipation • Complement to Type 2SD858 APPLICATIONS • Designed for AF power amplifier applications.

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) • Good Linearity of hFE • High Collector Power Dissipation • Complement to Type 2SD858 APPLICATIONS • Designed for AF power amplifier applications.

TO-92MOD Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High Transition Frequency

Voltage Regulator, Relay Lamp Driver Electrical Equipment Applications

Voltage Regulator, Relay Lamp Driver Electrical Equipment Applications

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.9 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PNP Plastic Encapsulated Transistor

FEATURE ● Power dissipation PCM: 0.9 W (Tamb=25℃ ) ● Collector current ICM: -1 A ● Collector-base voltage V(BR)CBO: -60 V ● Operating and storage junction temperature range TJ, TSTG: -55℃ to +150℃

MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD864K

MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD864K

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -1.5A ·Complement to Type 2SD864 APPLICATIONS ·Medium speed an

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Complement to type 2SD864 APPLICATIONS ·For medium speed and power switching Applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Complement to type 2SD864K APPLICATIONS ·For medium speed and power switching Applications

MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD864K

MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD864K

Silicon PNP epitaxial planer type(For low-frequency output amplification)

Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD874 and 2SD874A ■Features ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the

Silicon PNP Epitaxial Planar Type

Features Large collector power dissipation PC Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

PNP Silicon Medium Power Transistor

FEATURES Power dissipation PCM : 500mW˄Tamb=25ć˅ Collector current ICM :-1 A Collector-base voltage VB(BR)CBO: -30 V Operating and storage junction temperature range TJˈTstg: -55ćto +150ć

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM: 500 mW (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

Silicon PNP epitaxial planer transistor

FEATURES Large collector power dissipation PC. Mini Power type package,allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Silicon PNP epitaxial planer transistor

FEATURES Large collector power dissipation PC. Complementary to 2SD874A. Mini Power type package,allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Plastic Encapsulated Transistor

FEATURES Large collector power dissipation PC Complementary to 2SD874A

Silicon PNP epitaxial planer type(For low-frequency output amplification)

Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD874 and 2SD874A ■Features ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the

LOW FREQUENCY OUTPUT AMPLIFICATION

LOW FREQUENCY OUTPUT AMPLIFICATION FEATURES * Large collector power dissipation Pc. * Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

PNP EPITAXIAL PLANAR TRANSISTOR

PNP EPITAXIAL PLANAR TRANSISTOR Lead(Pb)-Free

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES Large collector power dissipation PC Complementary to 2SD874A

Silicon PNP epitaxial planer type(For low-frequency output amplification)

For low-frequency output amplification Complementary to 2SD0875 (2SD875) ■ Features • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing a

Silicon PNP Epitaxial Planar Type

Features • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO • Mini type package, allowing downsizing of the equipment and automatic

Silicon PNP Transistor

■ Features ● High voltage:VCEO=-150V ● Complimentary to 2SD1033.

PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3?

DESCRIPTION 2SB768 is designed for Color TV Vertical Deflection Output, especially in Hybrid Integrated Circuits. FEATURES • High Voltage: VCEO = −150 V • Complement to 2SD1033

SILICON TRANSISTOR

PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

isc Silicon NPN Power Transistor

DESCRIPTION • High voltage:VCEO=-150V • PNP silicon triple diffused transistor • Complementary NPN types:2SD1033 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • The 2SB768 is designed for color TV vertical deflec

Silicon PNP Power Transistor

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Silicon PNP Power Transistors

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Silicon PNP Power Transistors

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Silicon PNP Power Transistor

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Silicon PNP Power Transistors

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Silicon PNP Power Transistors

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Silicon PNP Power Transistors

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Silicon PNP Power Transistors

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Silicon PNP Power Transistors

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Silicon PNP Power Transistors

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Silicon PNP Power Transistors

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Plastic-Encapsulated Transistors

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TO-92L Bipolar Junction Transistors

Transistor

晶体管

Voltage Regulator, Relay Lamp Driver Electrical Equipment Applications

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