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2SB76晶体管资料
2SB76别名:2SB76三极管、2SB76晶体管、2SB76晶体三极管
2SB76生产厂家:日本日立公司
2SB76制作材料:Ge-PNP
2SB76性质:低频或音频放大 (LF)
2SB76封装形式:直插封装
2SB76极限工作电压:12V
2SB76最大电流允许值:0.07A
2SB76最大工作频率:<1MHZ或未知
2SB76引脚数:3
2SB76最大耗散功率:0.15W
2SB76放大倍数:
2SB76图片代号:C-47
2SB76vtest:12
2SB76htest:999900
- 2SB76atest:0.07
2SB76wtest:0.15
2SB76代换 2SB76用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,2SB54,2SB56,3AX52C,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220package ·Lowcollectorsaturationvoltage ·Complementtotype2SD855 APPLICATIONS ·Foraudiofrequencyandradiofrequencypoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
iscSiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-60V(Min) ·GoodLinearityofhFE ·WideAreaofSafeOperation ·ComplementtoType2SD855 APPLICATIONS ·Mediumpoweramplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·Complementtotype2SD856/856A ·Lowcollectorsaturationvoltage APPLICATIONS ·Foraudiofrequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·Complementtotype2SD856/856A ·Lowcollectorsaturationvoltage APPLICATIONS ·Foraudiofrequencypoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·Complementtotype2SD856/856A ·Lowcollectorsaturationvoltage APPLICATIONS ·Foraudiofrequencypoweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·Complementtotype2SD856/856A ·Lowcollectorsaturationvoltage APPLICATIONS ·Foraudiofrequencypoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·Complementtotype2SD856/856A ·Lowcollectorsaturationvoltage APPLICATIONS ·Foraudiofrequencypoweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·Complementtotype2SD856/856A ·Lowcollectorsaturationvoltage APPLICATIONS ·Foraudiofrequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
2SB762A DESCRIPTION •WithTO-220Cpackage •Complementtotype2SD857/857A •Lowcollectorsaturationvoltage APPLICATIONS •Foraudiofrequencypoweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Cpackage •Complementtotype2SD857/857A •Lowcollectorsaturationvoltage APPLICATIONS •Foraudiofrequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Cpackage •Complementtotype2SD857/857A •Lowcollectorsaturationvoltage APPLICATIONS •Foraudiofrequencypoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-60V(Min) •GoodLinearityofhFE •WideAreaofSafeOperation •ComplementtoType2SD857 APPLICATIONS •DesignedforAFpoweramplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Cpackage •Complementtotype2SD857/857A •Lowcollectorsaturationvoltage APPLICATIONS •Foraudiofrequencypoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
2SB762A DESCRIPTION •WithTO-220Cpackage •Complementtotype2SD857/857A •Lowcollectorsaturationvoltage APPLICATIONS •Foraudiofrequencypoweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Cpackage •Complementtotype2SD857/857A •Lowcollectorsaturationvoltage APPLICATIONS •Foraudiofrequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconPNPPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-60V(Min) •GoodLinearityofhFE •HighCollectorPowerDissipation •ComplementtoType2SD858 APPLICATIONS •DesignedforAFpoweramplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3PNpackage •Complementtotype2SD858 •Wideareaofsafeoperation APPLICATIONS •Forpoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-60V(Min) •GoodLinearityofhFE •HighCollectorPowerDissipation •ComplementtoType2SD858 APPLICATIONS •DesignedforAFpoweramplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
VoltageRegulator,RelayLampDriverElectricalEquipmentApplications VoltageRegulator,RelayLampDriverElectricalEquipmentApplications | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
TRANSISTOR(PNP) FEATURES Powerdissipation PCM:0.9W(Tamb=25℃) Collectorcurrent ICM:-1A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | |||
TO-92MODPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●HighTransitionFrequency | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
PNPPlasticEncapsulatedTransistor FEATURE ●PowerdissipationPCM:0.9W(Tamb=25℃) ●CollectorcurrentICM:-1A ●Collector-basevoltageV(BR)CBO:-60V ●Operatingandstoragejunctiontemperaturerange TJ,TSTG:-55℃to+150℃ | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION ·HighDCCurrentGain- :hFE=1000(Min)@IC=-1.5A ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-120V(Min) ·LowCollector-EmitterSaturationVoltage- :VCE(sat)=-1.5V(Max)@IC=-1.5A ·ComplementtoType2SD864 APPLICATIONS ·Mediumspeedan | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
MEDIUMSPEEDANDPOWERSWITCHINGCOMPLEMENTARYPAIRWITH2SD864K MEDIUMSPEEDANDPOWERSWITCHINGCOMPLEMENTARYPAIRWITH2SD864K | HitachiHitachi Semiconductor 日立日立公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·DARLINGTON ·HighDCcurrentgain ·Complementtotype2SD864 APPLICATIONS ·FormediumspeedandpowerswitchingApplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·DARLINGTON ·HighDCcurrentgain ·Complementtotype2SD864K APPLICATIONS ·FormediumspeedandpowerswitchingApplications | SAVANTIC Savantic, Inc. | |||
MEDIUMSPEEDANDPOWERSWITCHINGCOMPLEMENTARYPAIRWITH2SD864K MEDIUMSPEEDANDPOWERSWITCHINGCOMPLEMENTARYPAIRWITH2SD864K | HitachiHitachi Semiconductor 日立日立公司 | |||
SiliconPNPEpitaxialPlanarType Features LargecollectorpowerdissipationPC Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPSiliconMediumPowerTransistor FEATURES Powerdissipation PCM:500mW˄Tamb=25ć˅ Collectorcurrent ICM:-1A Collector-basevoltage VB(BR)CBO:-30V Operatingandstoragejunctiontemperaturerange TJˈTstg:-55ćto+150ć | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
SiliconPNPepitaxialplanertype(Forlow-frequencyoutputamplification) SiliconPNPepitaxialplanertype Forlow-frequencyoutputamplification Complementaryto2SD874and2SD874A ■Features ●LargecollectorpowerdissipationPC. ●MiniPowertypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthe | PanasonicPanasonic Semiconductor 松下松下电器 | |||
Plastic-EncapsulatedTransistors FEATURES Powerdissipation PCM:500mW(Tamb=25℃) Collectorcurrent ICM:-1A Collector-basevoltage V(BR)CBO:-30V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | |||
SiliconPNPepitaxialplanertransistor FEATURES LargecollectorpowerdissipationPC. MiniPowertypepackage,allowing downsizingoftheequipmentandautomatic insertionthroughthetapepackingandthe magazinepacking. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SiliconPNPepitaxialplanertransistor FEATURES LargecollectorpowerdissipationPC. Complementaryto2SD874A. MiniPowertypepackage,allowing downsizingoftheequipmentandautomatic insertionthroughthetapepackingandthe magazinepacking. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SiliconPNPepitaxialplanertype(Forlow-frequencyoutputamplification) SiliconPNPepitaxialplanertype Forlow-frequencyoutputamplification Complementaryto2SD874and2SD874A ■Features ●LargecollectorpowerdissipationPC. ●MiniPowertypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthe | PanasonicPanasonic Semiconductor 松下松下电器 | |||
LOWFREQUENCYOUTPUTAMPLIFICATION LOWFREQUENCYOUTPUTAMPLIFICATION FEATURES *LargecollectorpowerdissipationPc. *MiniPowertypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking. | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
PlasticEncapsulatedTransistor FEATURES LargecollectorpowerdissipationPC Complementaryto2SD874A | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
PNPEPITAXIALPLANARTRANSISTOR PNPEPITAXIALPLANARTRANSISTOR Lead(Pb)-Free | WEITRON Weitron Technology | |||
TRANSISTOR(PNP) TRANSISTOR(PNP) FEATURES LargecollectorpowerdissipationPC Complementaryto2SD874A | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | |||
SiliconPNPEpitaxialPlanarType Features •LargecollectorpowerdissipationPC •Highcollector-emittervoltage(Baseopen)VCEO •Minitypepackage,allowingdownsizingoftheequipmentandautomatic | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
SiliconPNPepitaxialplanertype(Forlow-frequencyoutputamplification) Forlow-frequencyoutputamplification Complementaryto2SD0875(2SD875) ■Features •LargecollectorpowerdissipationPC •Highcollector-emittervoltage(Baseopen)VCEO •Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackinga | PanasonicPanasonic Semiconductor 松下松下电器 | |||
SiliconPNPTransistor ■Features ●Highvoltage:VCEO=-150V ●Complimentaryto2SD1033. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPSILICONTRIPLEDIFFUSEDTRANSISTORMP-3? DESCRIPTION 2SB768isdesignedforColorTVVerticalDeflectionOutput,especiallyinHybridIntegratedCircuits. FEATURES •HighVoltage:VCEO=−150V •Complementto2SD1033 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
SILICONTRANSISTOR PNPSILICONTRIPLEDIFFUSEDTRANSISTOR MP-3 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •Highvoltage:VCEO=-150V •PNPsilicontriplediffusedtransistor •ComplementaryNPNtypes:2SD1033 •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •The2SB768isdesignedforcolorTVverticaldeflec | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistor 文件:71.07 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors 文件:90.66 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:96.68 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistor 文件:74.35 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors 文件:179.48 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:179.48 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:96.68 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:96.79 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:198.14 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:198.14 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:134.41 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
Plastic-EncapsulatedTransistors 文件:62.49 Kbytes Page:1 Pages | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | |||
VoltageRegulator,RelayLampDriverElectricalEquipmentApplications 文件:40.29 Kbytes Page:4 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
PNPPlasticEncapsulatedTransistor 文件:589.04 Kbytes Page:3 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
SiliconPNPPowerTransistors 文件:113.09 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistor 文件:77.68 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |
2SB76产品属性
- 类型
描述
- 型号
2SB76
- 制造商
ISC
- 制造商全称
Inchange Semiconductor Company Limited
- 功能描述
isc Silicon PNP Power Transistor
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
松下 |
2020+ |
SOT89 |
6500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
PANASONIC |
20+ |
SOT-89 |
2107 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
PANASONIC |
2023+ |
SOT-89 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
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长电 |
21+ |
SOT-89 |
6142 |
原装现货假一赔十 |
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CJ/长电 |
24+ |
SOT-89 |
50000 |
只做原装,欢迎询价,量大价优 |
|||
NK/南科功率 |
2025+ |
SOT-89 |
10000 |
国产南科平替供应大量 |
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CJ/长电 |
21+ |
SOT-89 |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
CJ/长晶 |
20+ |
SOT-89 |
120000 |
原装正品 可含税交易 |
|||
KEXIN |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
PANJITPL |
2024 |
SOT-89 |
58209 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
2SB76规格书下载地址
2SB76参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
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- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
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- 303c
- 2sc4226
- 2SB772L
- 2SB772I
- 2SB772D
- 2SB772B
- 2SB772
- 2SB77(H,N)
- 2SB77
- 2SB768
- 2SB767
- 2SB766A
- 2SB766
- 2SB765K
- 2SB765(K)
- 2SB765
- 2SB764L
- 2SB764
- 2SB763B
- 2SB763A
- 2SB763
- 2SB762B
- 2SB762A
- 2SB762
- 2SB761B
- 2SB761A
- 2SB761
- 2SB760B
- 2SB760A
- 2SB760
- 2SB75A(AH)
- 2SB759A
- 2SB759
- 2SB758A
- 2SB758
- 2SB757
- 2SB756
- 2SB755
- 2SB754
- 2SB753
- 2SB751B
- 2SB751A
- 2SB751
- 2SB750B
- 2SB750A
- 2SB750
- 2SB75(H)
- 2SB749(A)
- 2SB748(A)
- 2SB747
- 2SB745A
- 2SB745
- 2SB744A
- 2SB744
- 2SB743
- 2SB740
- 2SB739
- 2SB738
- 2SB737
- 2SB736A
- 2SB736
2SB76数据表相关新闻
2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-142SB776L-TO252R-P-TG_UTC代理商
2SB776L-TO252R-P-TG_UTC代理商
2023-2-242SB857L-TO126CK-D-TG_UTC代理商
2SB857L-TO126CK-D-TG_UTC代理商
2023-2-142SB834L-TO220FT-O-TG_UTC代理商
2SB834L-TO220FT-O-TG_UTC代理商
2023-2-92SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下:·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息)·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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