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isc Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High Current Capability • Wide Area of Safe Operation • Complement to Type 2SD732 APPLICATIONS • Designed for AF power amplifier applications. • Recommended for output stage of 60W power amplifier.

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEo=-120V(Min) • High Current Capability • Wide Area of Safe Operation • Complement to Type 2SD732 APPLICATIONS • Designed for AF power amplifier applications. • Recommended for output stage of 60W power amplifier.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • High power dissipation APPLICATIONS • Power amplifier applications • Recommended for high-power high-fidelity audio frequency amplifier output stage

SAVANTIC

Silicon PNP Power Transistors

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SAVANTIC

更新时间:2026-5-24 16:30:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
24+
TO-3
10000
SANYO
16+
TO-3
100000
全新原装现货

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