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2SB69晶体管资料
2SB69别名:2SB69三极管、2SB69晶体管、2SB69晶体三极管
2SB69生产厂家:日本东芝公司
2SB69制作材料:Ge-PNP
2SB69性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2SB69封装形式:直插封装
2SB69极限工作电压:60V
2SB69最大电流允许值:6A
2SB69最大工作频率:<1MHZ或未知
2SB69引脚数:2
2SB69最大耗散功率:25W
2SB69放大倍数:
2SB69图片代号:E-14
2SB69vtest:60
2SB69htest:999900
- 2SB69atest:6
2SB69wtest:25
2SB69代换 2SB69用什么型号代替:AD166,AL102,AL103,2N3612,2N3614,2SB231,3AD56A,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD726 LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD726 | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Wide area of safe operation APPLICATIONS • For low frequency power amplifier and power switching applications | SAVANTIC | |||
isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD727 APPLICATIONS • Designed for low frequency power amplifier and power switching applications. | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD727 APPLICATIONS • Designed for low frequency power amplifier and power switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD731 APPLICATIONS • Designed for power amplifier and general purpose applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Wide area of safe operation APPLICATIONS • For power amplifier and general purpose applications | SAVANTIC | |||
isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD731 APPLICATIONS • Designed for power amplifier and general purpose applications. | ISC 无锡固电 | |||
isc Silicon PNP Power Transistors DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High Current Capability • Wide Area of Safe Operation • Complement to Type 2SD732 APPLICATIONS • Designed for AF power amplifier applications. • Recommended for output stage of 60W power amplifier. | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • High power dissipation APPLICATIONS • Power amplifier applications • Recommended for high-power high-fidelity audio frequency amplifier output stage | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEo=-120V(Min) • High Current Capability • Wide Area of Safe Operation • Complement to Type 2SD732 APPLICATIONS • Designed for AF power amplifier applications. • Recommended for output stage of 60W power amplifier. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEo= -140V(Min) • High Current Capability • Wide Area of Safe Operation • Complement to Type 2SD733 APPLICATIONS • Designed forAF power amplifier applications. • Recommended for output stage of SOW power amplifier. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
For AF Power Amplifier Use For AF Power Amplifier Use | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2SD733/733K • High power dissipation APPLICATIONS • Power amplifier applications • Recommended for high-power high-fidelity audio frequency amplifier output stage | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2SD733/733K • High power dissipation APPLICATIONS • Power amplifier applications • Recommended for high-power high-fidelity audio frequency amplifier output stage | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2SD733/733K • High power dissipation APPLICATIONS • Power amplifier applications • Recommended for high-power high-fidelity audio frequency amplifier output stage | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2SD733/733K • High power dissipation APPLICATIONS • Power amplifier applications • Recommended for high-power high-fidelity audio frequency amplifier output stage | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2SD733/733K • High power dissipation APPLICATIONS • Power amplifier applications • Recommended for high-power high-fidelity audio frequency amplifier output stage | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2SD733/733K • High power dissipation APPLICATIONS • Power amplifier applications • Recommended for high-power high-fidelity audio frequency amplifier output stage | SAVANTIC | |||
For AF Power Amplifier Use For AF Power Amplifier Use | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
1W AF Output, Electronic Governor, DC-DC Converter Applications 1W AF Output, Electronic Governor, DC-DC Converter Applications 2SB698, 2SD734, B698, D734 | SANYO 三洋 | |||
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD726 | ETC 知名厂家 | ETC | ||
High Power Dissipation 文件:110.07 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon PNP Power Transistor 文件:126.14 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors 文件:136.21 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon PNP Power Transistor 文件:136.24 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Complement to Type 2SD728 文件:90.44 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon PNP Power Transistors 文件:136.21 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon PNP Power Transistors 文件:114.67 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon PNP Power Transistors 文件:122.21 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon PNP Power Transistors 文件:142.22 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:142.22 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
For AF Power Amplifier Use | ETC 知名厂家 | ETC | ||
Silicon PNP Power Transistors 文件:122.21 Kbytes Page:3 Pages | SAVANTIC | |||
Epitaxial Planar Silicon Transistor 1W AF Output, Electronic Governor, DC-DC Converter Applications | ONSEMI 安森美半导体 | |||
Silicon PNP transistor in a TO-92 Plastic Package 文件:980.25 Kbytes Page:6 Pages | FOSHAN 蓝箭电子 |
2SB69产品属性
- 类型
描述
- 型号
2SB69
- 功能描述
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD726
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI/日立 |
24+ |
TO-3 |
54000 |
郑重承诺只做原装进口现货 |
|||
HITACHI/日立 |
24+ |
NA/ |
3300 |
原装现货,当天可交货,原型号开票 |
|||
SANYO |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
HITACHI/TOS |
25+ |
TO-220 |
45000 |
HITACHI/TOS全新现货2SB690即刻询购立享优惠#长期有排单订 |
|||
HITACHI/日立 |
25+ |
TO-3 |
880000 |
明嘉莱只做原装正品现货 |
|||
HITACHI |
23+ |
NA |
126 |
专做原装正品,假一罚百! |
|||
24+ |
TO-220 |
10000 |
全新 |
||||
HITACHI |
23+ |
5000 |
专注配单,只做原装进口现货 |
||||
TOSHIBA |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
TOSHIBA/东芝 |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
2SB69芯片相关品牌
2SB69规格书下载地址
2SB69参数引脚图相关
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- 2SB694(H)
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- 2SB691
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- 2SB689
- 2SB688
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- 2SB67A(AH)
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- 2SB672
- 2SB671(A)
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- 2SB653A
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2SB69数据表相关新闻
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2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下: ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息) ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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