| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PNPEpitaxialPlanarTransistors PNPEpitaxialPlanarTransistors P/bLead(Pb)-Free | WEITRON Weitron Technology |  |   | |
BIPOLARPOWERGENERALPURPOSETRANSISTOR PNPSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SD669/A | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | | |
SiliconPNPPowerTransistors DESCRIPTION •WithTO-126package •Complementtotype2SD669/669A •HighbreakdownvoltageVCEO:-120/-160V •Highcurrent-1.5A •Lowsaturationvoltage,excellenthFElinearity APPLICATIONS •Forlow-frequencypoweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 |  | | |
PNPTypePlasticEncapsulateTransistors FEATURES Powersmplifierapplications Powerdissipation PCM:1W（Tamb=25℃） Collectorcurrent ICM:-1.5A Collector-basevoltage V(BR)CBO:-180V Operatingandstoragejunctiontemperaturerange TJ，Tstg:-55℃to+150 Collector-emittervoltage VC | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 |  | | |
TO-126CPlastic-EncapsulatedTransistors 文件：63.42 Kbytes Page：1 Pages | TELTokyo Electron Ltd. 东电电子东京电子有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HIT |
12+ |
TO-126 |
2500 |
原装现货/特价 |
|||
UTC |
23+ |
TO-126 |
12000 |
现货库存,实单请给接受价格 |
|||
UTC |
24+ |
SOT89 |
6000 |
深圳原装现货价格优势 |
|||
HITACHI/日立 |
24+ |
TO-126 |
1750 |
大批量供应优势库存热卖 |
|||
HIT日立 |
23+ |
TO-126 |
5000 |
原装正品,假一罚十 |
|||
UTC |
23+ |
SOT-89 |
63000 |
原装正品现货 |
|||
UTC |
23+ |
TO-126 |
30000 |
代理全新原装现货,价格优势 |
|||
UTC/友顺 |
23+ |
TO-126C |
50000 |
原装正品 支持实单 |
|||
CJ |
24+ |
TO-126 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
Unisonic |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
2SB649T/B芯片相关品牌
2SB649T/B规格书下载地址
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www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下：·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息）·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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