位置：首页 > IC中文资料 > 2SB1721(0)-Z-E1-AZ
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 |   | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon Power Transistors 文件：155.47 Kbytes Page：6 Pages | NEC 瑞萨 | | ||
Silicon Power Transistors 文件：155.47 Kbytes Page：6 Pages | NEC 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
24+ |
30000 |
||||||
NEC |
05+ |
18723 |
|||||
NEC |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
NEC |
2450+ |
SOT252 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
NEC |
24+ |
TO-252 |
9600 |
原装现货,优势供应,支持实单! |
|||
NEC |
2023+ |
TO-252 |
50000 |
原装现货 |
|||
NEC |
23+ |
SOT252 |
6500 |
专注配单,只做原装进口现货 |
|||
NEC |
23+ |
SOT252 |
7000 |
||||
RENESAS |
22+ |
TO-252 |
20000 |
公司只有原装 品质保证 |
2SB1721(0)-Z-E1-AZ芯片相关品牌
2SB1721(0)-Z-E1-AZ规格书下载地址
2SB1721(0)-Z-E1-AZ参数引脚图相关
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2SB1721(0)-Z-E1-AZ数据表相关新闻
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2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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