| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SB1721 | Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 |   | |
2SB1721 | Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | |
2SB1721 | Silicon Power Transistors 文件：155.47 Kbytes Page：6 Pages | NEC 瑞萨 | | |
2SB1721 | Transistor | RENESAS 瑞萨 | | |
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Bipolar Power Transistors Support is limited to customers who have already adopted these products.\n\nA wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others. | RENESAS 瑞萨 | | ||
Silicon Power Transistors 文件：155.47 Kbytes Page：6 Pages | NEC 瑞萨 | |
2SB1721产品属性
- 类型
描述
- NPN/PNP：
PNP
- Vcbo (V)：
-60
- VCEO (V)：
-60
- Vebo (V)：
-7
- Automotive：
YES
- IC (A) @25 °C：
-3
- VCE(sat) (V) max.：
-1
- hFE min.：
100
- hFE max.：
400
- fT (MHz) typ.：
5
- Cob (pF) typ.：
80
- Package Type：
MP-3
- Production Status：
Mass Production
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
30000 |
||||||
RENESAS/瑞萨 |
23+ |
TO-252 |
66600 |
专业芯片配单原装正品假一罚十 |
|||
NEC |
2450+ |
SOT252 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS |
2511 |
TO-252 |
1004 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
NEC |
05+ |
18723 |
全新 发货1-2天 |
||||
NEC |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
RENESAS |
22+ |
TO-252 |
20000 |
公司只有原装 品质保证 |
|||
NEC |
25+ |
SOT-263 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
NEC |
24+ |
TO-252 |
9600 |
原装现货,优势供应,支持实单! |
|||
NEC |
2023+ |
TO-252 |
50000 |
原装现货 |
2SB1721规格书下载地址
2SB1721参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
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- 3q1
- 3g汽车
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- 2SB229100MA
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- 2SB206
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- 2SB175C
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- 2SB175
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- 2SB173B
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- 2SB1705TL
- 2SB1705
- 2SB1700
- 2SB170
- 2SB169900L
- 2SB1699
- 2SB1698T100
- 2SB1698
- 2SB1697T100
- 2SB1697
- 2SB1695TL
- 2SB1695KT146
- 2SB1695
- 2SB1694T106
- 2SB1694
- 2SB169300L
- 2SB1693
- 2SB1691WL-TL-E
- 2SB1691
- 2SB1690TL
- 2SB1690KT146
- 2SB1690
- 2SB1689T106
- 2SB1682(Q)
- 2SB1679G0L
- 2SB167900L
2SB1721数据表相关新闻
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2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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